相关论文: Energy-efficient magnetoelastic non-volatile memor…
Power consumption is the main limitation in the development of new high performance random access memory for portable electronic devices. Magnetic RAM (MRAM) with CoFeB/MgO based magnetic tunnel junctions (MTJs) is a promising candidate for…
The role of universal memory can be successfully satisfied by magnetic tunnel junctions (MTJs) where the writing mechanism is based on spin-transfer torque (STT). An improvement in the switching properties (lower switching current density…
The primary impediment to continued improvement of charge-based electronics is the excessive energy dissipation incurred in switching a bit of information. With suitable choice of materials, devices made of multiferroic composites, i.e.,…
A Ferroelectric Analog Non-Volatile Memory based on a WOx electrode and ferroelectric HfZrO$_4$ layer is fabricated at a low thermal budget (~375$^\circ$C), enabling BEOL processes and CMOS integration. The devices show suitable properties…
The current flash memory technology focuses on the cost minimization of its static storage capacity. However, the resulting approach supports a relatively small number of program-erase cycles. This technology is effective for consumer…
Nanogap engineering of low-dimensional nanomaterials, has received considerable interest in a variety of fields, ranging from molecular electronics to memories. Creating nanogaps at a certain position is of vital importance for the…
When fabricating magnetic memories, one of the main challenges is to maintain the bit stability while downscaling. Indeed, for magnetic volumes of a few thousand nm3, the energy barrier between magnetic configurations becomes comparable to…
Based on the micromagnetic simulations the magnetization switching in a triangle magnetic element by voltage-control of magnetic anisotropy and Dzyaloshinskii-Moriya interaction under in-plane magnetic field is proposed. The proposed…
Processing in memory (PiM) represents a promising computing paradigm to enhance performance of numerous data-intensive applications. Variants performing computing directly in emerging nonvolatile memories can deliver very high energy…
The inversion of extremely high order matrices has been a challenging task because of the limited processing and memory capacity of conventional computers. In a scenario in which the data does not fit in memory, it is worth to consider…
Battery-less technology evolved to replace battery usage in space, deep mines, and other environments to reduce cost and pollution. Non-volatile memory (NVM) based processors were explored for saving the system state during a power failure.…
Reservoir computing is a highly efficient machine learning framework for processing temporal data by extracting features from the input signal and mapping them into higher dimensional spaces. Physical reservoir layers have been realized…
Recent studies have shown that nonlinear magnetization dynamics excited in nanostructured ferromagnets are applicable to brain-inspired computing such as physical reservoir computing. The previous works have utilized the magnetization…
Non-volatile memory (NVM) is a class of promising scalable memory technologies that can potentially offer higher capacity than DRAM at the same cost point. Unfortunately, the access latency and energy of NVM is often higher than those of…
Voltage-induced dynamic switching in magnetic tunnel junctions (MTJs) is a writing technique for voltage-controlled magnetoresistive random access memory (VCMRAM), which is expected to be an ultimate non-volatile memory with ultra-low power…
Cache serves as a temporary data memory module in many general-purpose processors and domain-specific accelerators. Its density, power, speed, and reliability play a critical role in enhancing the overall system performance and quality of…
A new spintronic nonvolatile memory cell analogous to 1T DRAM with non-destructive read is proposed. The cells can be used as neural computing units. A dual-circuit neural network architecture is proposed to leverage these devices against…
The technique of conventional ferromagnet/heavy-metal spin-orbit torque (SOT) offers significant potential for enhancing the efficiency of magnetic memories. However, it faces fundamental physical limitations, including hunting effects from…
Write asymmetry, the significantly different write current for high-to-low and low-to-high resistance switching because of natural stochastic behaviors of magnetization, is a fundamental issue in magnetic random-access memory (MRAM). For…
The nonvolatile magnetoresistive random access memory (MRAM) is believed to facilitate emerging applications, such as in memory computing, neuromorphic computing and stochastic computing. Two dimensional (2D) materials and their van der…