相关论文: Energy-efficient magnetoelastic non-volatile memor…

Off-chip buses account for a significant portion of the total system power consumed in embedded systems. Bus encoding schemes have been proposed to minimize power dissipation, but none has been demonstrated to be optimal with respect to any…

Tuneable capacitors are vital for adaptive and reconfigurable electronics, yet existing approaches require continuous bias or mechanical actuation. Here we demonstrate a voltage-programmable ferroelectric memcapacitor based on HfZrO that…

In this technical note, we address the comments on the energy estimates for Magnetoelectric Spin-orbit (MESO) Logic, a new logic device proposed by the authors. We provide an analytical derivation of the switching energy, and support it…

Single-molecule magnets weakly coupled to two ferromagnetic leads act as memory devices in electronic circuits---their response depends on history, not just on the instantaneous applied voltage. We show that magnetic anisotropy introduces a…

Convolutional neural network (CNN) achieves excellent performance on fascinating tasks such as image recognition and natural language processing at the cost of high power consumption. Stochastic computing (SC) is an attractive paradigm…

RRAM-based in-Memory Computing is an exciting road for implementing highly energy efficient neural networks. This vision is however challenged by RRAM variability, as the efficient implementation of in-memory computing does not allow error…

Magnetic random-access memory (MRAM) driven by spin-transfer torque (STT) is a major contender for future memory applications. The energy dissipation involved in writing remains problematic, even with the advent of more efficient…

We propose a new type of multi-bit and energy-efficient magnetic memory based on current-driven, field-free, and highly controlled domain wall motion. A meandering domain wall channel with precisely interspersed pinning regions provides the…

Phase-change memory (PCM) is a scalable and low latency non-volatile memory (NVM) technology that has been proposed to serve as storage class memory (SCM), providing low access latency similar to DRAM and often approaching or exceeding the…

As transistor-based memory technologies like dynamic random access memory (DRAM) approach their scalability limits, the need to explore alternative storage solutions becomes increasingly urgent. Phase-change memory (PCM) has gained…

The discovery of the spin torque effect has made magnetic nanodevices realistic candidates for active elements of memory devices and applications. Magnetoresistive effects allow the read-out of increasingly small magnetic bits, and the spin…

We realized an organic electrical memory device with a simple structure based on single layer pentacene film embedded between Al and ITO electrodes. The optimization of the thickness and deposition rate of pentacene resulted in a reliable…

DRAM-based main memories have read operations that destroy the read data, and as a result, must buffer large amounts of data on each array access to keep chip costs low. Unfortunately, system-level trends such as increased memory contention…

Electric-field induced magnetization switching in multiferroic magnetoelectric devices is promising for beyond Moore's law computing. We show here that interface-coupled multiferroic heterostructures, i.e., a ferroelectric layer coupled…

Magnetic random access memory that uses magnetic tunnel junction memory cells is a high performance, non-volatile memory technology that goes beyond traditional charge-based memories. Today its speed is limited by the high magnetization of…

Many performance critical systems today must rely on performance enhancements, such as multi-port memories, to keep up with the increasing demand of memory-access capacity. However, the large area footprints and complexity of existing…

Biologically-inspired computing models have made significant progress in recent years, but the conventional von Neumann architecture is inefficient for the large-scale matrix operations and massive parallelism required by these models. This…

We formulate an energy-storage concept based on the free energy associated with metastable magnetic configurations. Despite the active, magnetic region of the battery being electrically insulating, it can sustain effective hydrodynamics of…

The possible use of spin and magnets in place of charge and capacitors to store and process information is well known. Magnetic tunnel junctions are being widely investigated and developed for magnetic random access memories. These are two…

In this work, an optimized method was implemented for attaining stable multibit operation with low energy consumption in a two-terminal memory element made from the following layers: Ag/Pt nanoparticles (NPs)/SiO2/TiN in a…