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We examine the low-energy physics of graphene in the presence of a circularly polarized electric field in the terahertz regime. Specifically, we derive a general expression for the dynamical polarizability of graphene irradiated by an ac…

介观与纳米尺度物理 · 物理学 2012-04-26 Maria Busl , Gloria Platero , Antti-Pekka Jauho

Graphene decorated with 5d transitional metal atoms is predicted to exhibit many intriguing properties; for example iridium adatoms are proposed to induce a substantial topological gap in graphene. We extensively investigated the…

介观与纳米尺度物理 · 物理学 2016-04-18 Yilin Wang , Shudong Xiao , Xinghan Cai , Wenzhong Bao , Janice Reutt-Robey , Michael S. Fuhrer

Metal contacts are fundamental building components for graphene based electronic devices and their properties are greatly influenced by interface quality during device fabrication, leading to resistance variation. Here we show that nickel…

化学物理 · 物理学 2016-01-28 Zhenjun Zhang , Fan Yang , Pratik Agnihotri , Ji Ung Lee , Jim R. Lloyd

We investigate the transport properties of graphene underneath metal to reveal whether the carrier density in graphene underneath source/drain electrodes in graphene field-effect transistors is fixed. The resistance of the graphene/Ni…

介观与纳米尺度物理 · 物理学 2015-06-16 T. Moriyama , K. Nagashio , T. Nishimura , A. Toriumi

We theoretically demonstrate that a system formed by two coupled graphene sheets enables a negative damping regime wherein graphene plasmons are pumped by a DC current. This effect is triggered by electrons drifting through one of the…

介观与纳米尺度物理 · 物理学 2017-10-04 Tiago A. Morgado , Mário G. Silveirinha

The ultimate surface exposure provided by graphene monolayer makes it the ideal sensor platform but also exposes its intrinsic properties to any environmental perturbations. In this work, we demonstrate that the charge carrier density of…

Recent work investigated graphene's hydrogenation with independent control of the electric field, E, and charge density, n, in the crystal and showed that the process is controlled by n. Here, we demonstrate layer-selective…

Various mesoscopic devices exploit electrostatic side gates for their operation. In this paper, we investigate how voltage-biasing of graphene side gates modulates the electrical transport characteristics of graphene channel. We explore…

介观与纳米尺度物理 · 物理学 2014-10-29 Ching-Tzu Chen , Tony Low , Hsin-Ying Chiu , Wenjuan Zhu

We investigate gated trilayer graphene partially devoid of outer layers and forming a system of two trilayers connected by a single layer of graphene. A difference in the stacking order of trilayers leads to the appearance of gapless…

介观与纳米尺度物理 · 物理学 2022-12-28 Wlodzimierz Jaskolski

Topological insulators are materials where current does not flow through the bulk, but along the boundaries, only. They are of particular practical importance, since it is considerably more difficult, by ``conventional'' means, to affect…

强关联电子 · 物理学 2021-07-20 Stam Nicolis

We present a detailed study of the high-current transport properties of graphene devices patterned in a four-point configuration. The current tends to saturate as the voltage across graphene is increased but never reaches the complete…

介观与纳米尺度物理 · 物理学 2015-05-13 Amelia Barreiro , Michele Lazzeri , Joel Moser , Francesco Mauri , Adrian Bachtold

We investigate spin transport in diffusive graphene nanoribbons with both clean and rough zigzag edges, and long-range potential fluctuations. The long-range fields along the ribbon edges cause the local doping to come close to the charge…

介观与纳米尺度物理 · 物理学 2014-03-31 Jan Bundesmann , Ming-Hao Liu , Inanc Adagideli , Klaus Richter

We introduce an idea of experimental verification of the counterintuitive negative radiation pressure effect in some classical field theories by means of buckled graphene. In this effect, a monochromatic plane wave interacting with…

介观与纳米尺度物理 · 物理学 2018-10-05 R. D. Yamaletdinov , T. Romanczukiewicz , Y. V. Pershin

The capability to control the type and amount of charge carriers in a material and, in the extreme case, the transition from metal to insulator is one of the key challenges of modern electronics. By employing angle resolved photoemission…

材料科学 · 物理学 2008-10-23 S. Y. Zhou , D. A. Siegel , A. V. Fedorov , A. Lanzara

We demonstrate by experiments and numerical simulations that the low-temperature current-voltage characteristics in diffusive bilayer graphene (BLG) exhibit a strong superlinearity at finite bias voltages. The superlinearity is weakly…

介观与纳米尺度物理 · 物理学 2011-05-24 J. K. Viljas , A. Fay , M. Wiesner , P. J. Hakonen

We report on the observation of edge electric currents excited in bi-layer graphene by terahertz laser radiation. We show that the current generation belongs to the class of second order in electric field phenomena and is controlled by the…

In the present work, we investigate how structural defects in graphene can change its transport properties. In particular, we show that breaking of the sublattice symmetry in a graphene monolayer overcomes the Klein effect, leading to…

介观与纳米尺度物理 · 物理学 2015-06-04 C. Popovici , O. Oliveira , W. de Paula , T. Frederico

The passage of DNA through a nanopore can be effectively decomposed into two distinct phases, docking and actual translocation. In experiments each phase is characterized by a distinct current signature which allows the discrimination of…

We show that the optical excitation of graphene with polarized light leads to the pure valley current where carriers in the valleys counterflow. The current in each valley originates from asymmetry of optical transitions and electron…

介观与纳米尺度物理 · 物理学 2015-05-28 L. E. Golub , S. A. Tarasenko , M. V. Entin , L. I. Magarill

Graphene is a promising candidate to succeed silicon based devices and doping holds the key to graphene electronics. Conventional doping methods through surface functionalization or lattice modification are effective in tuning carrier…

介观与纳米尺度物理 · 物理学 2016-11-16 Yangbo Zhou , Jakub Jadwiszczak , Darragh Keane , Ying Chen , Dapeng Yu , Hongzhou Zhang