相关论文: Magnetic-Field-Modulated Resonant Tunneling in Fer…
The tunnel magnetoresistance (TMR) of F/O/F magnetic junctions, (F's are ferromagnetic layers and O is an oxide spacer) in the presence of magnetic impurities within the barrier, is investigated. We assume that magnetic couplings exist both…
We study the relation between tunnel magnetoresistance (TMR) and interfacial electronic states modified by magnetic impurities introduced at the interface of the ferromagnetic tunnel junctions, by making use of the periodic Anderson model…
Injection of spins into semiconductors is essential for the integration of the spin functionality into conventional electronics. Insulating layers are often inserted between ferromagnetic metals and semiconductors for obtaining an efficient…
In this paper, we attempt the theoretical modeling of the magnetic tunnel junctions with embedded magnetic and nonmagnetic nanoparticles (NPs). A few abnormal tunnel magnetoresistance (TMR) effects, observed in related experiments, can be…
The tunnel magnetoresistance (TMR) effect is one of the representative phenomena in spintronics. Ferromagnets, which have a net spin polarization, have been utilized for the TMR effect. Recently, by contrast, the TMR effect with…
The tunnel current and magnetoresistance (TMR) are investigated in magnetic tunnel junctions consisting of a spin-filter tunnel barrier, sandwiched between a ferromagnetic (FM) electrode and a nonmagnetic (NM) electrode. The investigations…
The conductance and tunnel magneto-resistance (TMR) of the double barrier magnetic tunnel junction with spin-valve sandwich (F/P/F) inserted between two insulating barrier, are theoretically investigated. It is shown, that resonant…
Oscillatory tunneling magnetoresistance (TMR) as a function of spacer thickness is investigated theoretically for a magnetic tunnel junction with a nonmagnetic layer inserted between the tunnel barrier and the ferromagnetic layer. TMR is…
Tunneling Magnetoresistance between two ferrromagnets is an issue of fundamental importance in spintronics. In this work, we show that tunneling magnetoresistance can also emerge in junctions composed of ferromagnets and time-reversal…
We consider a new type of magnetic tunnel junction, which consists of two ferromagnetic tunnel barriers acting as spin filters (SFs), separated by a nonmagnetic metal (NM) layer. Using the transfer matrix method and the free-electron…
Temperature dependence of the tunnel magnetoresistance (TMR) was calculated in range of the quantum-ballistic model in the magnetic tunnel junctions (MTJs) with embedded nanoparticles (NPs). The electron tunnel transport through NP was…
We theoretically investigate magnetoresistance (MR) effects in connection with spin filtering in quantum-coherent transport through tunnel junctions based on non-magnetic/semimagnetic heterostructures. We find that spin filtering in…
We theoretically investigate the angular and spin dependent transport in normal-metal/helical-multiferroic/ferromagnetic heterojunctions. We find a tunneling anisotropic magnetoresistance (TAMR) effect due to the spiral magnetic order in…
The effect of spin relaxation on tunnel magnetoresistance (TMR) in a ferromagnet/superconductor/ferromagnet (FM/SC/FM) double tunnel junction is theoretically studied. The spin accumulation in SC is determined by balancing of the…
We have studied tunnel magnetoresistance (TMR) in junctions with 3d ferromagnetic electrodes. Previously we predicted that defects in the barrier would result in reduced effective polarization P of the impurity assisted current. This is…
The paper addresses inelastic spin-flip tunneling accompanied by surface spin excitations (magnons) in ferromagnetic junctions. The inelastic tunneling current is proportional to the magnon density of states which is energy-independent for…
The spin-polarized transport is investigated in a new type of magnetic tunnel junction which consists of two ferromagnetic electrodes separated by a magnetic barrier and a nonmagnetic metallic spacer. Based on the transfer matrix method and…
A model of a spin valve in which electron transport between the magnetized electrodes is due to multistep tunneling is analyzed. Motivated by recent experiments on organic spin valves, we assume that spin memory loss in the course of…
We make a theoretical study of the quantum oscillations of the tunneling magnetoresistance (TMR) as a function of the spacer layer thickness. Such oscillations were recently observed in tunneling junctions with a nonmagnetic metallic spacer…
Different mechanisms of spin-dependent tunneling are analyzed with respect to their role in tunnel magnetoresistance (TMR). Microscopic calculation within a realistic model shows that direct tunneling in iron group systems leads to about a…