相关论文: Stark shift and field ionization of arsenic donors…
We present a complete theoretical treatment of Stark effects in doped silicon, whose predictions are supported by experimental measurements. A multi-valley effective mass theory, dealing non-perturbatively with valley-orbit interactions…
Electric fields can be used to tune donor spins in silicon using the Stark shift, whereby the donor electron wave function is displaced by an electric field, modifying the hyperfine coupling between the electron spin and the donor nuclear…
We report Stark shift measurements for 121Sb donor electron spins in silicon using pulsed electron spin resonance. Interdigitated metal gates on top of a Sb-implanted 28Si epi-layer are used to apply electric fields. Two Stark effects are…
Adiabatic shuttling of single impurity bound electrons to gate induced surface states in semiconductors has attracted much attention in recent times, mostly in the context of solid-state quantum computer architecture. A recent transport…
The dependence of the g-factors of semiconductor donors on applied electric and magnetic fields is of immense importance in spin based quantum computation and in semiconductor spintronics. The donor g-factor Stark shift is sensitive to the…
The demonstration of universal quantum logic operations near the fault-tolerance threshold establishes ion-implanted near-surface donor atoms as a plausible platform for scalable quantum computing in silicon. The next technological step…
This work reports an ESR study of low energy, low fluence phosphorus ion implantation into silicon in order to observe the activation of phosphorus donors placed in close proximity to the Si-SiO2 interface. Electrical measurements, which…
The Stark shift of the hyperfine coupling constant is investigated for a P donor in Si far below the ionization regime in the presence of interfaces using Tight-binding and Band Minima Basis approaches and compared to the recent precision…
Atomistic tight-binding (TB) simulations are performed to calculate the Stark shift of the hyperfine coupling for a single Arsenic (As) donor in Silicon (Si). The role of the central-cell correction is studied by implementing both the…
We report the use of novel, capacitively terminated coplanar waveguide (CPW) resonators to measure the quadratic Stark shift of phosphorus donor qubits in Si. We confirm that valley repopulation leads to an anisotropic spin-orbit Stark…
Donor electron spins in semiconductors make exceptional quantum bits because of their long coherence times and compatibility with industrial fabrication techniques. Despite many advances in donor-based qubit technology, it remains difficult…
The development of a materials platform that exhibits both superconducting and semiconducting properties is an important endeavour for a range of emerging quantum technologies. We investigate the formation of superconductivity in nanowires…
We report fabrication of transistors in a FinFET geometry using isotopically purified silicon-28 -on-insulator (28-SOI) substrates. Donor electron spin coherence in natural silicon is limited by spectral diffusion due to the residual…
We study the effect of a static electric field on lithium donor spins in silicon. The anisotropy of the effective mass leads to the anisotropy of the quadratic Stark susceptibility, which we determined using the Dalgarno-Lewis exact…
Negatively charged silicon vacancy centers (SiV$^-$) in diamond exhibit excellent spin coherence and optical properties, making them promising candidates for quantum technologies. However, the strain-induced inhomogeneous distribution of…
A laser cooling scheme for trapped ions is presented which is based on the fast dynamical Stark shift gate, described in [Jonathan etal, PRA 62, 042307]. Since this cooling method does not contain an off resonant carrier transition, low…
Boron implantation with in-situ dynamic annealing is used to produce highly conductive sub-surface layers in type IIa (100) diamond plates for the search of a superconducting phase transition. Here we demonstrate that high-fluence MeV…
In spin-based quantum information processing devices, the presence of control and detection circuitry can change the local environment of a spin by introducing strain and electric fields, altering its resonant frequencies. These resonance…
We design a resistive heater optimized for efficient and low-loss optical phase modulation in a silicon-on-insulator (SOI) waveguide and characterize the fabricated devices. Modulation is achieved by flowing current perpendicular to a new…
We report the first demonstration of integrated electro-optic (EO) phase shifters based on racetrack microresonators on a 3C-silicon-carbide-on-insulator (SiCOI) platform working at near-infrared (NIR) wavelengths. By applying DC voltage in…