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相关论文: Formation of quantum spin Hall state on Si surface…

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Formation of topological quantum phase on conventional semiconductor surface is of both scientific and technological interest. Here, we demonstrate epitaxial growth of 2D topological insulator, i.e. quantum spin Hall (QSH) state, on Si(111)…

材料科学 · 物理学 2014-12-03 Miao Zhou , Wenmei Ming , Zheng Liu , Zhengfei Wang , Ping Li , Feng Liu

Although many possible two-dimensional (2D) topological insulators (TIs) have been predicted in recent years, there is still lack of experimentally realizable 2D TI. Through first-principles and tight-binding simulations, we found an…

材料科学 · 物理学 2018-07-31 Can Qi , Liying Ouyang , Jun Hu

Two-dimensional (2D) topological insulators (TIs) are promising platforms for low-dissipation spintronic devices based on the quantum spin Hall (QSH) effect, but experimental realization of such systems with a large band gap suitable for…

介观与纳米尺度物理 · 物理学 2018-05-23 P. Chen , W. -W. Pai , Y. -H. Chan , W. -L. Sun , C. -Z. Xu , D. -S. Lin , M. Y. Chou , A. -V. Fedorov , T. -C. Chiang

Two-dimensional (2D) topological insulators (TIs) hold promise for applications in spintronics based on the fact that the propagation direction of edge electrons of a 2D TI is robustly linked to their spin origination. Here, with the use of…

材料科学 · 物理学 2015-09-02 Yandong Ma , Liangzhi Kou , Ying Dai , Thomas Heine

Topological insulators are electronic materials that have a bulk band gap like an ordinary insulator, but have protected conducting states on their edge or surface. The 2D topological insulator is a quantum spin Hall insulator, which is a…

介观与纳米尺度物理 · 物理学 2015-03-13 M. Z. Hasan , C. L. Kane

Two-dimensional (2D) topological insulators (TIs) with a large bulk band-gap are promising for experimental studies of the quantum spin Hall effect and for spintronic device applications. Despite considerable theoretical efforts in…

Topological insulators (TIs) represent a new quantum state of matter characterized by robust gapless states inside the insulating bulk gap. The metallic edge states of a two-dimensional (2D) TI, known as quantum spin Hall (QSH) effect, are…

介观与纳米尺度物理 · 物理学 2015-06-17 Liangzhi Kou , Binghai Yan , Feiming Hu , Shu-Chun Wu , Tim O. Wehling , Claudia Felser , Changfeng Chen , Thomas Frauenheim

A three-dimensional (3D) topological insulator (TI) is a quantum state of matter with a gapped insulating bulk yet a conducting surface hosting topologically-protected gapless surface states. One of the most distinct electronic transport…

介观与纳米尺度物理 · 物理学 2015-01-06 Yang Xu , Ireneusz Miotkowski , Chang Liu , Jifa Tian , Hyoungdo Nam , Nasser Alidoust , Jiuning Hu , Chih-Kang Shih , M. Zahid Hasan , Yong P. Chen

The two-dimensional topological insulators (2DTI) host a full gap in the bulk band, induced by spin-orbit coupling (SOC) effect, together with the topologically protected gapless edge states. However, the SOC-induced gap is usually small,…

We propose that ordinary semiconductors with large spin-orbit coupling (SOC), such as GaAs, can host stable, robust, and {\it tunable} topological states in the presence of quantum confinement and superimposed potentials with hexagonal…

介观与纳米尺度物理 · 物理学 2015-06-11 O. P. Sushkov , A. H. Castro Neto

Two-dimensional topological insulators (2DTI) have attracted increasing attention during the past few years. New 2DTI with increasing larger spin-orbit coupling (SOC) gaps have been predicted by theoretical calculations and some of them…

介观与纳米尺度物理 · 物理学 2020-08-17 Yanhui Hou , Teng Zhang , Jiatao Sun , Liwei Liu , Yugui Yao , Yeliang Wang

Three-dimensional topological insulators (TIs) are a perfectly tuned quantum-mechanical machinery in which counter-propagating and oppositely spin-polarized conduction channels balance each other on the surface of the material. This…

介观与纳米尺度物理 · 物理学 2021-05-04 A. I. Figueroa , T. Hesjedal , N. -J. Steinke

Topological insulator (TI) states have been demonstrated in materials with narrow gap and large spin-orbit interactions (SOI). Here we demonstrate that nanoscale engineering can also give rise to a TI state, even in conventional…

材料科学 · 物理学 2015-06-05 M. S. Miao , Q. Yan , C. G. Van de Walle , W. K. Lou , L. L. Li , K. Chang

Topological insulators (TIs) exhibit novel physics with great promise for new devices, but considerable challenges remain to identify TIs with high structural stability and large nontrivial band gap suitable for practical applications. Here…

We provide a self-consistent mean-field framework to study the effect of strong interactions in a quantum spin Hall insulator on the honeycomb lattice. We identify an exotic phase for large spin-orbit coupling and intermediate Hubbard…

强关联电子 · 物理学 2012-01-26 Andreas Rüegg , Gregory A. Fiete

2D topological insulators promise novel approaches towards electronic, spintronic, and quantum device applications. This is owing to unique features of their electronic band structure, in which bulk-boundary correspondences enforces the…

Two-dimensional (2D) topological insulators (TIs), a new state of quantum matter, are promising for achieving the low-power-consuming electronic devices owning to the remarkable robustness of their conducting edge states against…

材料科学 · 物理学 2016-11-15 Yandong Ma , Liangzhi Kou , Ying Dai , Thomas Heine

The notion of topological insulators (TIs), characterized by an insulating bulk and conducting topological surface states, can be extended to higher-order topological insulators (HOTIs) hosting gapless modes localized at the boundaries of…

Quantum spin Hall insulators (QSHIs), also known as two-dimensional topological insulators, have emerged as an unconventional class of quantum states with insulating bulk and conducting edges originating from nontrivial inverted band…

介观与纳米尺度物理 · 物理学 2016-11-11 Takafumi Akiho , François Couëdo , Hiroshi Irie , Kyoichi Suzuki , Koji Onomitsu , Koji Muraki

In a topological insulator (TI) the character of electron transport varies from insulating in the interior of the material to metallic near its surface. Unlike, however, ordinary metals, conducting surface states in TIs are topologically…

介观与纳米尺度物理 · 物理学 2013-02-08 G. Tkachov , E. M. Hankiewicz
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