相关论文: Fixing the Energy Scale in Scanning Tunneling Micr…
Band bending is a central concept in solid-state physics that arises from local variations in charge distribution especially near semiconductor interfaces and surfaces. Its precision measurement is vital in a variety of contexts from the…
Scanning tunneling spectroscopy measures how a single electron with definite energy propagates between a sample surface and the tip of a scanning tunneling microscope. In the simplest description, the differential conductance measured is…
We report the results of a cryogenic study of the modification of YBa2Cu3O7-delta surface electronic properties with the probe of a scanning tunneling microscope (STM). A negative voltage applied to the sample during STM tunneling is found…
Recent scanning tunneling microscopy measurements on cuprate superconductors have revealed remarkable spatial inhomogeneities in the single-particle energy gap. Using cellular dynamical mean-field theory, we study the zero temperature…
The observation of the Kondo effect in mesoscopic systems under bias$^{1,2}$ has opened a new chapter in the physics of the Kondo phenomenon. Various types of $dI/dV$, where $I$ and $V$ denote current and source-drain (s-d) bias,…
Measurements of conductance spectra in a superconductor - topological insulator - normal metal thin film junctions of NbN-$\rm Bi_2Se_3$-Au are reported. Junctions with ex-situ and in-situ prepared $\rm NbN-Bi_2Se_3$ interfaces were…
The electronic structure of Si(111)-(6x6)Au surface covered with submonolayer amount of Pb is investigated using scanning tunneling spectroscopy. Already in small islands of Pb with thickness of 1 ML Pb$_{(111)}$ and with the diameter of…
Scanning tunneling microscopy (STM) and micro-electromechanical systems (MEMS) have traditionally addressed vastly different length scales - one resolving atoms, the other engineering macroscopic motion. Here we unite these two fields to…
The electrical performance of a tunnel field-effect transistor depends critically on the band offset at their semiconductor heterojunction interface. Historically, it has been difficult to experimentally determine how the electronic bands…
We report scanning tunneling spectroscopy (STS) measurements of the gap properties of both ceramic MgB2 and c-axis oriented epitaxial MgB2 thin films. Both show a temperature dependent zero bias conductance peak and evidence for two…
The self-energy-functional approach proposed recently is applied to the single-band Hubbard model at half-filling to study the Mott-Hubbard metal-insulator transition within the most simple but non-trivial approximation. This leads to a…
A numerical renormalization-group survey of the zero-bias electrical conductance through a quantum dot embedded in the conduction path of a nanodevice is reported. The results are examined in the light of a recently derived linear mapping…
We consider a Hubbard-Anderson model which describes localized orbitals in five different sites hybridized both among themselves and with a continuum of extended states. A square planar geometry with an atom at the center is used to…
We propose a novel probe technique capable of performing local low-temperature spectroscopy on a 2D electron system (2DES) in a semiconductor heterostructure. Motivated by predicted spatially-structured electron phases, the probe uses a…
We analyze the phase transitions of an interacting electronic system weakly coupled to free-electron leads by considering its zero-bias conductance. This is expressed in terms of two effective impurity models for the cases with and without…
We employ effective mass theory for degenerate hole-bands to calculate the acceptor binding energies for Be, Mg, Zn, Ca, C and Si substitutional acceptors in GaN and AlN. The calculations are performed through the 6$\times $6…
Conventional quantum transport methods can provide quantitative information on spin, orbital, and valley states in quantum dots, but often lack spatial resolution. Scanning tunneling microscopy, on the other hand, provides exquisite spatial…
We investigate quantum transport through strongly disordered barriers, made of a material with exceptionally high resistivity that behaves as an Anderson insulator or a ``bad metal'' in the bulk, by analyzing the distribution of Landauer…
The electronic properties of disordered systems at the Anderson metal-insulator transition (MIT) have been the subject of intense study for several decades. Thermoelectric properties at the MIT, such as thermopower and thermal conductivity,…
We have investigated the intermediate valence narrow-gap semiconductor SmB6 at low temperatures using both conventional spear-anvil type point contacts as well as mechanically controllable break junctions. The zero-bias conductance varied…