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相关论文: A direct comparison of CVD-grown and exfoliated Mo…

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Chemical vapor deposition (CVD) allows growing transition metal dichalcogenides (TMDs) over large surface areas on inexpensive substrates. In this work, we correlate the structural quality of CVD grown MoS$_2$ monolayers (MLs) on SiO$_2$/Si…

Innovative applications based on two-dimensional solids require cost-effective fabrication processes resulting in large areas of high quality materials. Chemical vapour deposition is among the most promising methods to fulfill these…

Monolayer molybdenum disulphide (MoS$_2$) is a promising two-dimensional (2D) material for nanoelectronic and optoelectronic applications. The large-area growth of MoS$_2$ has been demonstrated using chemical vapor deposition (CVD) in a…

Two-dimensional materials such as transitional metal dichalcogenides exhibit unique optical and electrical properties. Here we report on the varying optical properties of CVD grown MoS2 monolayer flakes with different shapes. In particular,…

应用物理 · 物理学 2020-03-18 Siwei Luo , Conor P. Cullen , Gencai Guo , Jianxin Zhong , Georg S. Duesberg

The optical emission efficiency of two dimensional layered transition metal dichalcogenides (TMDs) is one of the most important parameter that affects their optoelectronic performance. Optimization of growth parameters of chemical vapor…

材料科学 · 物理学 2017-06-13 Amina Zafar , Haiyan Nan , Zainab Zafar , Zhangting Wu , Jie Jiang , Yumeng You , Zhenhua Ni

Recently emerging large-area single-layer MoS2 grown by chemical vapor deposition has triggered great interest due to its exciting potential for applications in advanced electronic and optoelectronic devices. Unlike gapless graphene, MoS2…

The ability to synthesize high-quality samples over large areas and at low cost is one of the biggest challenges during the developmental stage of any novel material. While chemical vapor deposition (CVD) methods provide a promising…

Monolayers of ReS2 were grown by a chemical vapor deposition technique on SiO2/Si substrates and investigated at room temperature by using micro-Raman, micro-photoluminescence (PL) and absorbance spectroscopies. The Raman scattering…

材料科学 · 物理学 2024-04-23 Solomon Ojo , Juwon Onasanya , Morad Benamara , Bothina Hamad , M. O. Manasreh

Layered metal dichalcogenide materials are a family of semiconductors with a wide range of energy band gaps and properties, and potential to open up new areas of physics and technology applications. However, obtaining high crystal quality…

The growth of single-layer MoS2 with chemical vapor deposition is an established method that can produce large-area and high quality samples. In this article, we investigate the geometrical and optical properties of hundreds of individual…

介观与纳米尺度物理 · 物理学 2017-04-07 Foad Ghasemi , Riccardo Frisenda , Dumitru Dumcenco , Andras Kis , David Perez de Lara , Andres Castellanos-Gomez

Transition metal dichalcogenide, especially MoS2 has attracted lot of attention recently owing to its tunable visible range band gap and anisotropic electronic and transport properties. Here, we report a comprehensive inelastic light…

材料科学 · 物理学 2020-08-26 Deepu Kumar , Birender Singh , Rahul Kumar , Mahesh Kumar , Pradeep Kumar

Real-time monitoring is essential for understanding and eventually precise controlling of the growth of two dimensional transition-metal dichalcogenides (2D TMDCs). However, it is very challenging to carry out such kind of studies on…

材料科学 · 物理学 2018-11-02 C. B. López-Posadas , Yaxu Wei , Wanfu Shen , Daniel Kahr , Michael Hohage , Lidong Sun

Developing techniques for high-quality synthesis of mono and few-layered 2D materials with lowered complexity and cost continues to remain an important goal, both for accelerating fundamental research and for applications development. We…

材料科学 · 物理学 2020-10-27 Davoud Hejazi , Renda Tan , Neda Kari Rezapour , Mehrnaz Mojtabavi , Meni Wanunu , Swastik Kar

Molybdenum disulfide, MoS2, has recently gained considerable attention as a layered material where neighboring layers are only weakly interacting and can easily slide against each other. Therefore, mechanical exfoliation allows the…

材料科学 · 物理学 2016-06-10 Alejandro Molina-Sánchez , Kerstin Hummer , Ludger Wirtz

Transition metal dichalcogenide (TMD) materials have received enormous attention due to their extraodinary optical and electrical properties, among which MoS2 is the most typical one. As thickness increases from monolayer to multilayer, the…

Transition metal dichalcogenides (TMDs) have recently attracted attention due to their interesting electronic and optical properties. Fabrication of these materials in a reliable and facile method is important for future applications, as…

We fabricate large-area atomically thin MoS$_2$ layers through the direct transformation of crystalline molybdenum MoS$_2$ (MoO$_3$) by sulfurization at relatively low temperatures. The obtained MoS2 sheets are polycrystalline (~10-20 nm…

Monolayer molybdenum disulphide (MoS2) is a promising two-dimensional direct-bandgap semiconductor with potential applications in atomically thin and flexible electronics. An attractive insulating substrate or mate for MoS2 (and related…

The advantage of MoS2, compared with graphene, is the direct growth on various oxide substrates by chemical vapor deposition (CVD) without utilizing catalytic metal substrates, which facilitates practical applications for electronics. The…

材料科学 · 物理学 2017-08-31 Sora Kurabayashi , Kosuke Nagashio

Monolayer Molybdenum disulfide (MoS2), a two-dimensional crystal with a direct bandgap, is a promising candidate for 2D nanoelectronic devices complementing graphene. There have been recent attempts to produce MoS2 layers via chemical and…

材料科学 · 物理学 2011-11-23 Yongjie Zhan , Zheng Liu , Sina Najmaei , Pulickel M. Ajayan , Jun Lou
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