相关论文: Ballistic spin resonance in multisubband quantum w…

In this paper we use a spin kinetic equation to study spin polarization dynamics in 1D wires and 2D channels. This approach is valid in both diffusive and ballistic spin transport regimes and, therefore, more general than the usual spin…

We consider quasiballistic electron transmission in a one-dimensional quantum wire subject to both time-independent and periodic potentials of a finger gate that results in a coordinate- and time-dependent Rashba-type spin-orbit coupling. A…

The electron spin dynamics in multilayer GaAs/AlGaAs quantum wells, containing high-mobility dense two-dimensional electron gases, have been studied using time-resolved Kerr rotation and resonant spin amplification techniques. The electron…

Disorder in spin-orbit (SO) coupling is an important feature of real low-dimensional electron structures. We study spin relaxation due to such a disorder as well as resulting abilities of spin manipulation. The spin relaxation reveals…

The electron spin dynamics in an optically excited narrow quantum well is studied, where the electron spins precess in a k-dependent magnetic field while the electrons scatter at localized impurities. For the resulting spin decay, which is…

In this work, the spin relaxation accompanying the spin diffusion in symmetric Si/SiGe quantum wells without the D'yakonov-Perel' spin-relaxation mechanism is calculated from a fully microscopic approach. The spin relaxation is caused by…

We develop a theory of spin-dependent phenomena in the streaming regime characterized by ballistic acceleration of electrons in the moderate electric field until they achieve the optical phonon energy and abruptly emit the phonons. It is…

Spin relaxation in the impurity band of a 2D semiconductor with spin-split spectrum in the external magnetic field is considered. Several mechanisms of spin relaxation are shown to be relevant. The first one is attributed to phonon-assisted…

We report a large and unexpected suppression of the free electron spin relaxation in lightly-doped n-GaAs bulk crystals. The spin relaxation rate shows weak mobility dependence and saturates at a level 30 times less then that predicted by…

The phenomenon of spin resonance has had far reaching influence since its discovery nearly 70 years ago. Electron spin resonance (ESR) driven by high frequency magnetic fields has informed our understanding of quantum mechanics, and finds…

A pulsed technique for electrons in 2D systems, in some ways analogous to spin echo in nuclear magnetic resonance, is discussed. We show that a sequence of optical below-band gap pulses can be used to suppress the electron spin relaxation…

We present a microscopic analysis of electron spin dynamics in the presence of an external magnetic field for non-centrosymmetric semiconductors in which the D'yakonov-Perel' spin-orbit interaction is the dominant spin relaxation mechanism.…

We propose a method of two-beam spin noise spectroscopy to test the spin transport at equilibrium via analysis of correlations between time-shifted spin fluctuations at different space locations. This method allows one to determine the…

Theory of the electron spin relaxation in graphene on the SiO$_2$ substrate is developed. Charged impurities and polar optical surface phonons in the substrate induce an effective random Bychkov-Rashba-like spin-orbit coupling field which…

We investigate electron spin dynamics in narrow two-dimensional n-InGaAs channels as a function of the channel width. The spin relaxation times increase with decreasing channel width, in accordance with recent theoretical predictions based…

We simulate spin polarized transport of electrons along a silicon nanowire and along a silicon two dimensional channel. Spin density matrix calculations are used along with the semi-classical Monte Carlo approach to model spin evolution…

Strong interest has arisen recently on low-dimensional systems with strong spin-orbit interaction due to their peculiar properties of interest for some spintronic applications. Here, the time evolution of the electron spin polarization of a…

Silicon is a leading candidate material for spin-based devices, and two-dimensional electron gases (2DEGs) formed in silicon heterostructures have been proposed for both spin transport and quantum dot quantum computing applications. The key…

Carrier density dependence of electron spin relaxation in an intrinsic GaAs quantum well is investigated at room temperature using time-resolved circularly polarized pump-probe spectroscopy. It is revealed that the spin relaxation time…

We study theoretically the spin relaxation rate in quasi-one-dimensional coupled double semiconductor quantum dots. We consider InSb and GaAs-based systems in the presence of the Rashba spin-orbit interaction, which causes mixing of…