相关论文: Solvation Effects on Hole Mobility in the Poly G/P…
The charge transport properties of hybrid halide perovskites are investigated with a combination of density functional theory including van der Waals interaction and the Boltzmann theory for diffusive transport in the relaxation time…
Dynamical equations for a polaron and bipolaron in a DNA duplex are obtained on the basis of Holstein-Hubbard Hamiltonian. It is shown that in a PolyA/PolyT duplex especially stable is a bipolaron state in which holes are localized on…
A two-band model involving the A- and B-valence bands was adopted to analyze the temperature dependent Hall effect measured on N-doped \textit{p}-type ZnO. The hole transport characteristics (mobilities, and effective Hall factor) are…
Here we present an analysis of the mobility-limiting mechanisms of a two-dimensional hole gas on hydrogen-terminated diamond surfaces. The scattering rates of surface impurities, surface roughness, non-polar optical phonons, and acoustic…
The conductivity of extremely high mobility dilute two-dimensional holes in GaAs changes linearly with temperature in the insulating side of the metal-insulator transition. Hopping conduction, characterized by an exponentially decreasing…
The characteristics of cation radical (hole) migration in heterogeneous DNA were investigated on the basis of Kubo formula, in which correlation functions were obtained from solutions of systems of Bogoliubov hierarchy. The cutting of…
The temperature variation of partial mobility and effective mobility for undoped p-GaSb have been calculated using Matthiessen rule. The effective mobility depends on the ionized, acoustic, polar optical and non-polar optical scattering…
We report on a study of the interactions between holes and molecular vibrations on dry DNA using photoinduced infrared absorption spectroscopy. Laser photoexcited (PE) holes are found to have a room-temperature lifetime in excess of 1 ms,…
The temperature dependence of a charge mobility in a model DNA based on Holstein Hamiltonian is calculated for 4 types of homogeneous sequences It has turned out that upon rescaling all 4 types are quite similar. Two types of rescaling,…
The quality of the silicon-oxide interface plays a crucial role in fabricating reproducible silicon spin qubits. In this work we characterize interface quality by performing mobility measurements on silicon Hall bars. We find a peak…
Utilizing a novel carbon doping source, we prepared two-dimensional hole gases in a symmetric quantum well structure in the GaAs/AlGaAs heterosystem. Low temperature hole mobilities up to 1.2 x 10^6 cm^2/Vs at a density of 2.3 x 10^11 cm^-2…
With MgH^+ ions as a test case, we investigate to what extent the rotational motion of smaller polar molecular ions sympathetically cooled into Coulomb crystals in linear Paul traps couples to the translational motions of the ion ensemble.…
We calculate the dislocation glide mobility in solid $^4$He within a model that assumes the existence of a superfluid field associated with dislocation lines. Prompted by the results of this mobility calculation, we study within this model…
We investigate temperature dependent transport properties of two-dimensional p-GaAs systems taking into account both hole-phonon and hole-impurity scattering effects. By analyzing the hole mobility data of p-GaAs in the temperature range 10…
We study the thermo-electric transport coefficients of an extended version of the Gubser-Rocha model. After reviewing the two relaxation time model from holography and studying the effect of the magnetic field on thermo-electric transports…
Heat conduction plays an important role in the balance between heating and cooling in many astrophysical objects, e.g. cooling flows in clusters of galaxies. Here we investigate the effect of heat conduction on the interaction between a…
We have realized a two-dimensional hole system (2DHS), in which the 2DHS is induced at an atomically flat hydrogen-terminated Si(111) surface by a negative gate voltage applied across a vacuum cavity. Hole densities up to $7.5\times10^{11}$…
We demonstrate dual-gated $p$-type field-effect transistors (FETs) based on few-layer tungsten diselenide (WSe$_2$) using high work-function platinum source/drain contacts, and a hexagonal boron nitride top-gate dielectric. A device…
The 2D lattice gas model with competing short and long range interactions is appliedused for calculation of the incoherent charge transport in the classical strongly-correlated charge segregated polaronic state. We show, by means of…
We demonstrate the control of the hole concentration in Ga1-xMnxP over a wide range by introducing compensating vacancies. The resulting evolution of the Curie temperature from 51 K to 7.5 K is remarkably similar to that observed in…