相关论文: NIR Schottky Photodetectors Based on Individual Si…
Single crystal GeSe2 nanobelts (NBs) were successfully grown using chemical vapor deposition techniques. The morphology and structure of the nanostructures were characterized using scanning electron microscopy, transmission electron…
Many consumer technologies and scientific methods rely on photodetection of infrared light. We report a Schottky photodetector operating below silicon's band gap energy, through hot carrier injection from a nanoscale metallic absorber. Our…
Graphene-silicon (GS) Schottky junctions have been demonstrated as an efficient architecture for photodetection. However, the response speed of such devices for free space light detection has so far been limited to 10's-100's of kHz for…
We present the optoelectronic characterization of two graphene/silicon Schottky junctions, fabricated by transferring CVD-graphene on flat and nanotip-patterned n-Si substrates, respectively. We demonstrate record photo responsivity,…
Novel group IVV 2D semiconductors (e.g., GeAs and SiAs) has arisen as an attractive candidate for broad-band photodetection and optoelectronic applications. This 2D family has wide tunable bandgap, excellent thermodynamic stability, and…
The design of efficient graphene-silicon (GSi) Schottky junction photodetectors requires detailed understanding of the spatial origin of the photoresponse. Scanning-photocurrent-microscopy (SPM) studies have been carried out in the visible…
We demonstrate tunable Schottky barrier height and record photo-responsivity in a new-concept device made of a single-layer CVD graphene transferred onto a matrix of nanotips patterned on n-type Si wafer. The original layout, where…
We have investigated photoconductive properties of single Germanium Nanowires(NWs)of diameter less than 100 nm in the spectral range of 300 to 1100 nm showing ultra large peak Responsivity in excess of 10^{7}AW^{-1}.The NWs were grown by…
We report vertically-illuminated, resonant cavity enhanced, graphene-Si Schottky photodetectors (PDs) operating at 1550nm. These exploit internal photoemission at the graphene-Si interface. To obtain spectral selectivity and enhance…
We propose a hybrid device consisting of a graphene/silicon (Gr/Si) Schottky diode in parallel with a Gr/SiO2/Si capacitor for high-performance photodetection. The device, fabricated by transfer of commercial graphene on low-doped n-type Si…
On-chip integration of two-dimensional (2D) materials offers great potential for the realization of novel optoelectronic devices in different photonic platforms. In particular, indium selenide (InSe) is a very promising 2D material due to…
Graphene-Silicon Schottky diode photodetectors possess beneficial properties such as high responsivities and detectivities, broad spectral wavelength operation and high operating speeds. Various routes and architectures have been employed…
We demonstrate an efficient core-shell GaAs/AlGaAs nanowire photodetector operating at room temperature. The design of this nanoscale detector is based on a type-I heterostructure combined with a metal-semiconductor-metal (MSM) radial…
Recent development on Ge$_{1-x}$Sn$_x$ nanowires with high Sn content, beyond its solid solubility limit, make them attractive for all group-IV Si-integrated infrared photonics at nanoscale. Herein, we report a chemical vapour…
A critical challenge for the integration of the optoelectronics is that photodetectors have relatively poor sensitivities at the nanometer scale. It is generally believed that a large electrodes spacing in photodetectors is required to…
Since its discovery in 2004, graphene has attracted the interest of the scientific community due to its excellent properties of high carrier mobility, flexibility, strong light-matter interaction and broadband absorption. Despite of its…
We fabricated large area infrared photodetector devices from thin film of chemically reduced graphene oxide (RGO) sheets and studied their photoresponse as a function of laser position. We found that the photocurrent either increases,…
This paper presents the design, the fabrication and the characterization of Schottky graphene/silicon photodetectors, operating at both 2 micron and room temperature. The graphene/silicon junction has been carefully: characterized device…
Defects are detrimental for optoelectronics devices, such as stacking faults can form carrier-transportation barriers, and foreign impurities (Au) with deep-energy levels can form carrier traps and non-radiative recombination centers. Here,…
We have studied the optical properties of two-dimensional (2D) Schottky photodiode heterojunctions made of chemical vapor deposited (CVD) graphene on n- and p-type Silicon (Si) substrates. Much better rectification behavior is observed from…