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We investigate a quarter-filled two-band Hubbard model involving a crystal-field splitting, which lifts the orbital degeneracy as well as an inter-orbital hopping (inter-band hybridization). Both terms are relevant to the realistic…

强关联电子 · 物理学 2008-07-28 Alexander I. Poteryaev , Michel Ferrero , Antoine Georges , Olivier Parcollet

We solve the Periodic Anderson model in the Mott-Hubbard regime, using Dynamical Mean Field Theory. Upon electron doping of the Mott insulator, a metal-insulator transition occurs which is qualitatively similar to that of the single band…

强关联电子 · 物理学 2009-11-13 G. Sordi , A. Amaricci , M. J. Rozenberg

Recent studies of electrical transport, both theoretical and experimental, near the bandwidth-tuned Mott metal-insulator transition have uncovered apparent quantum critical scaling of the electrical resistivity at elevated temperatures,…

强关联电子 · 物理学 2019-11-06 Heike Eisenlohr , Seung-Sup B. Lee , Matthias Vojta

This work explores the unique character of strongly correlated systems, specifically Mott-insulators, in the context of battery electrode materials. The study investigates the correlation between the proposed chemical potential evolution…

The breakdown of the Mott insulator is studied when the dissipative tunneling into the environment is introduced to the system. By exactly solving the one-dimensional asymmetric Hubbard model, we show how such a breakdown of the Mott…

统计力学 · 物理学 2009-10-31 T. Fukui , N. Kawakami

We investigate the metal-to-insulator phase transition driven by the density-density electronic interaction in the quarter-filled model on a cubic lattice with two orbitals split by a crystal field. We show that a systematic consideration…

强关联电子 · 物理学 2023-05-30 M. Vandelli , J. Kaufmann , V. Harkov , A. I. Lichtenstein , K. Held , E. A. Stepanov

Pressure dependence of the conductivity and thermoelectric power is measured through the Mott transition in the layer organic conductor EtMe3P[Pd(dmit)2]2. The critical behavior of the thermoelectric effect provides a clear and objective…

强关联电子 · 物理学 2015-03-17 M. Abdel-Jawad , R. Kato , I. Watanabe , N. Tajima , Y. Ishii

Electron-electron interactions in materials lead to exotic many-body quantum phenomena including Mott metal-insulator transitions (MITs), magnetism, quantum spin liquids, and superconductivity. These phases depend on electronic band…

Turning a pristine Mott insulator into a correlated metal by chemical doping is a common procedure in strongly correlated materials physics, e.g. underlying the phenomenology of high-$T_c$ cuprates. The ruthenate bilayer compound…

强关联电子 · 物理学 2020-09-29 Frank Lechermann , Qiang Han , Andrew J. Millis

We present a theoretical investigation of the electronic structure of rutile (metallic) and M$_1$ and M$_2$ monoclinic (insulating) phases of VO$_2$ employing a fully self-consistent combination of density functional theory and embedded…

强关联电子 · 物理学 2016-08-03 W. H. Brito , M. C. O. Aguiar , K. Haule , G. Kotliar

The ground state phase diagram of the half-filled repulsive Hubbard model in a bilayer is investigated using cluster dynamical mean field theory. For weak to intermediate values of Coulomb repulsion $U$, the system undergoes a transition…

强关联电子 · 物理学 2009-11-13 S. S. Kancharla , S. Okamoto

A half-filled-band Hubbard model on an anisotropic triangular lattice (t in two bond directions and t' in the other) is studied using an optimization variational Monte Carlo method, to consider the Mott transition and superconductivity…

超导电性 · 物理学 2009-11-11 Tsutomu Watanabe , Hisatoshi Yokoyama , Yukio Tanaka , Jun-ichiro Inoue

A metal can be driven to an insulating phase through distinct mechanisms. A possible way is via the Coulomb interaction, which then defines the Mott metal-insulator transition (MIT). Another possibility is the MIT driven by disorder, the…

强关联电子 · 物理学 2021-10-04 G. A. Canella , V. V. França

We investigate the neutral-to-ionic insulator-insulator transition in one-dimensional materials by treating a strong-coupling effective model based on the ionic Hubbard model using the density-matrix renormalization group and finite-size…

强关联电子 · 物理学 2015-05-13 L. Tincani , R. M. Noack , D. Baeriswyl

We study transport properties of the half-filled two-dimensional (2D) Hubbard model with spatially varying interactions, where a pattern of interacting and non-interacting sites is formed. We use Determinantal Quantum Monte Carlo method to…

强关联电子 · 物理学 2014-08-15 Rubem Mondaini , Thereza Paiva

The Mott insulator Ca$_2$RuO$_4$ exhibits a rare insulator-to-metal transition (IMT) induced by DC current. While structural changes associated with this transition have been tracked by neutron diffraction, Raman scattering, and x-ray…

We present a theory describing the mechanism for the two-dimensional (2D) metal-insulator transition (MIT) in absence of disorder. A two-band Hubbard model is introduced, describing vacancy-interstitial pair excitations within the Wigner…

强关联电子 · 物理学 2008-02-15 S. Pankov , V. Dobrosavljevic

The pyrochlore lattice involves corner sharing tetrahedra and the resulting geometric frustration is believed to suppress any antiferromagnetic order for Mott insulators on this structure. There are nevertheless short-range correlations…

强关联电子 · 物理学 2016-10-19 Nyayabanta Swain , Rajarshi Tiwari , Pinaki Majumdar

It is shown that recent experiments indicating a metal-insulator transition in 2D electron systems can be interpreted in terms of a simple model, in which the resistivity is controlled by scattering at charged hole traps located in the…

无序系统与神经网络 · 物理学 2009-10-31 Boris L. Altshuler , Dmitrii L. Maslov

In this paper we critically discuss several examples of two-dimensional electronic systems displaying interaction-driven metal-insulator transitions of the Mott (or Wigner--Mott) type, including dilute two-dimension electron gases (2DEG) in…

强关联电子 · 物理学 2022-07-04 Yuting Tan , Vladimir Dobrosavljevic , Louk Rademaker