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Characterizing and controlling the out-of-equilibrium state of nanostructured Mott insulators hold great promises for emerging quantum technologies while providing an exciting playground for investigating fundamental physics of…

We have analyzed spectral weight changes in the conduction and the valence band across insulator to metal transition (IMT) in the VO2 thin film using X-ray absorption spectroscopy (XAS) and resonant photoemission spectroscopy (PES). Through…

强关联电子 · 物理学 2019-07-31 S. S. Majid , K. Gautam , A. Ahad , F. Rahman , R. J. Choudhary , Frank M. F. De Groot , D. K. Shukla

Based on recent experiments, we describe the Mott insulating, but undimerized state of $TiOCl$ using the local-density approximation combined with multi-orbital dynamical mean field theory (LDA+DMFT) for this $3d^{1}$ system.Good agreement…

强关联电子 · 物理学 2007-05-23 L. Craco , M. S. Laad , E. Müller-Hartmann

The interplay between delocalisation and repulsive interactions can cause electronic systems to undergo a Mott transition between a metal and an insulator. Here we use neural network hidden fermion determinantal states (HFDS) to uncover…

强关联电子 · 物理学 2024-12-10 Chloé Gauvin-Ndiaye , Joseph Tindall , Javier Robledo Moreno , Antoine Georges

A correlated material in the vicinity of an insulator-metal transition (IMT) exhibits rich phenomenology and variety of interesting phases. A common avenue to induce IMTs in Mott insulators is doping, which inevitably leads to disorder.…

We study the Mott metal-insulator transition in the two-band Hubbard model with different hopping amplitudes $t_1$ and $t_2$ for the two orbitals on the two-dimensional square lattice by using {\it non-magnetic} variational wave functions,…

强关联电子 · 物理学 2016-02-18 Luca F. Tocchio , Federico Arrigoni , Sandro Sorella , Federico Becca

Based on dynamical cluster approximation (DCA) quantum Monte Carlo simulations, we study the interaction-driven Mott metal-insulator transition (MIT) in the half-filled Hubbard model on the anisotropic two-dimensional triangular lattice,…

强关联电子 · 物理学 2015-04-06 Hung T. Dang , Xiao Yan Xu , Kuang-Shing Chen , Zi Yang Meng , Stefan Wessel

A possibility of a metal-insulator transition in molecular conductors has been studied for systems composed of donor molecules and fully ionized anions with an incommensurate ratio close to 2:1 based on a one-dimensional extended Hubbard…

强关联电子 · 物理学 2009-11-11 Hideo Yoshioka , Hitoshi Seo , Hidetoshi Fukuyama

Electrons can organize themselves into charge-ordered states to minimize the effects of long-ranged Coulomb interactions. In the presence of a lattice, commensurability constraints lead to the emergence of incompressible Wigner-Mott…

强关联电子 · 物理学 2024-12-31 Thomas G. Kiely , Debanjan Chowdhury

We study three regimes of the Mott transitions characterized by classical, marginally quantum and quantum. In the classical regime, the quantum degeneracy temperature is lower than the critical temperature of the Mott transition, Tc, below…

强关联电子 · 物理学 2007-05-23 Masatoshi Imada

Strong electron-electron interaction can induce Mott insulating state, which is believed to host unusual correlated phenomena such as quantum spin liquid when quantum fluctuation dominates and unconventional superconductivity through…

强关联电子 · 物理学 2025-04-24 Qiang Gao , Haiyang Chen , Wen-shin Lu , Yang-hao Chan , Zhenhua Chen , Yaobo Huang , Zhengtai Liu , Peng Chen

An abrupt metal-insulator transition (MIT) was observed in VO2 thin films during the application of a switching voltage pulse to two-terminal devices. Any switching pulse over a threshold voltage for the MIT of 7.1 V enabled the device…

强关联电子 · 物理学 2009-11-11 Byung-Gyu Chae , Hyun-Tak Kim , Doo-Hyeb Youn , Kwang-Yong Kang

The Mott metal-insulator transition in the two-band Hubbard model in infinite dimensions is studied by using the linearized dynamical mean-field theory. The discontinuity in the chemical potential for the change from hole to electron doping…

强关联电子 · 物理学 2009-11-07 Y. Ohashi , Y. Ono

We investigate the magnetic properties and Mott transition in the Hubbard model for weakly coupled chains on the anisotropic triangular lattice. Taking into account 120$^\circ$ N\'eel, and collinear orderings, the magnetic phase diagram is…

强关联电子 · 物理学 2015-06-22 Atsushi Yamada

One-body reduced density-matrix functional (1RDMF) theory has yielded promising results for small systems such as molecules, but has not addressed quantum phase transitions such as the Mott transition. Here we explicitly execute the…

强关联电子 · 物理学 2025-08-21 Zhengqian Cheng , Chris A. Marianetti

We investigate the metal insulator transitions at finite temperature for the Hubbard model with diagonal alloy disorder. We solve the dynamical mean field theory equations with the non crossing approximation and we use the coherent…

强关联电子 · 物理学 2009-11-11 P. Lombardo , R. Hayn , G. I. Japaridze

It is now possible to study experimentally the combined effect of disorder and interactions in cold atom physics. Motivated by these developments we investigate the dynamics around the metal-insulator transition (MIT) in a one-dimensional…

量子气体 · 物理学 2012-03-22 Masaki Tezuka , Antonio M. Garcia-Garcia

The mechanism that drives a metal-insulator transition in an undoped quasi-one-dimensional Mott insulator is examined in the framework of the Hubbard model with two different hoppings t_{perp 1} and t_{perp 2} between nearest-neighbor…

强关联电子 · 物理学 2011-11-09 M. Tsuchiizu , Y. Suzumura , C. Bourbonnais

Metal-insulator transition (MIT) is one of the most conspicuous phenomena in correlated electron systems. However such transition has rarely been induced by an external magnetic field as the field scale is normally too small compared with…

强关联电子 · 物理学 2020-12-02 Guangqiang Wang , Guoqing Chang , Huibin Zhou , Wenlong Ma , Hsin Lin , M. Zahid Hasan , Su-Yang Xu , Shuang Jia

We examine finite-temperature phase transitions in the two-orbital Hubbard model with different bandwidths by means of the dynamical mean-field theory combined with the continuous-time quantum Monte Carlo method. It is found that there…

强关联电子 · 物理学 2015-10-28 Aaram J. Kim , MooYoung Choi , Gun Sang Jeon