相关论文: Vertical organic spin valves in perpendicular magn…
A hybrid ferromagnet-superconductor spin valve is proposed. Its operation relies on the interplay between nonequilibrium transport and proximity-induced exchange coupling in superconductors. Huge tunnel magnetoresistance values as large as…
A recent experiment reports a non-local spin-signal that shows oscillatory behavior as a function of gate voltage when the contacts are magnetized along the direction of current flow, but not when they are magnetized perpendicular to the…
We report measurements of a new type of magnetoresistance in Pt and Ta thin films. The spin accumulation created at the surfaces of the film by the spin Hall effect decreases in a magnetic field because of the Hanle effect, resulting in an…
We have experimentally and theoretically investigated the electron spin transport and spin distribution at room temperature in a Si two-dimensional (2D) inversion channel of back-gate-type spin metal-oxide-semiconductor field-effect…
A large spin-accumulation voltage of more than 1.5 mV at 1 mA, i.e., a magnetoresistance of 1.5 {\Omega}, was measured by means of the local three-terminal magnetoresistance in nondegenerate Si-based lateral spin valves (LSVs) at room…
We study the magnetoresistance of spin-valve devices using graphene as a non-magnetic material to connect ferromagnetic leads. As a preliminary step we first study the conductivity of a graphene strip connected to metallic contacts for a…
Magnetic molecules possess a high potential as building blocks for the design of spintronic devices. Moreover, the use of molecular materials opens the way for the controlled use of bottom-up, e.g. supramolecular, processing techniques…
We report the successful fabrication of lateral organic spin valves with a channel length in the sub $100\,nm$ regime. The fabication process is based on in-situ shadow evaporation under UHV conditions and therefore yields clean and…
An electron interferometer was designed and fabricated via a normal metal/insulator/ferromagnet non-local lateral spin valve with a ring-shaped normal metal/insulator spacer, and spin current interference was observed. A very high spin…
We formulate a theory of current-induced spin torques in inhomogeneous III-V ferromagnetic semiconductors. The carrier spin-3/2 and large spin-orbit interaction, leading to spin non-conservation, introduce significant conceptual differences…
We report on a local spin valve effect observed unambiguously in lateral all-semiconductor all-electrical spin injection devices, employing p+-(Ga,Mn)As/n+-GaAs Esaki diode structures as spin aligning contacts. We discuss the observed local…
The anisotropic spin splitting in unconventional magnets opens new opportunities for realizing spintronic functionalities without relying on net magnetization or relativistic spin-orbit coupling. Here, we propose a spin valve and a spin…
We address two finite size effects in perpendicular transport through magnetic multilayers. When the magnetic layer thickness in spin valves becomes of the order or smaller than the spin-flip diffusion length, structural asymmetries affect…
The magnetoresistance of ultrathin insulating films of Bi has been studied with magnetic fields applied parallel and perpendicular to the plane of the sample. Deep in the strongly localized regime, the magnetoresistance is negative and…
We explore the magnetoresistance (MC) effect in an organic semiconductor device based on the magnetic field related bipolaron formation. By establishing a group of dynamic equations, we present the transition among spin-parallel,…
The lack of certain crystalline symmetries in strong spin-orbit-coupled non-magnetic materials allows for the existence of uncoventional spin Hall responses, with electrically generated transverse spin currents possessing collinear flow and…
The spin density matrix for spin-3/2 hole systems can be decomposed into a sequence of multipoles which has important higher-order contributions beyond the ones known for electron systems [R. Winkler, Phys. Rev. B \textbf{70}, 125301…
We have observed distinct temperature-dependent magnetization reversal modes in a perpendicular (Co/Pd)4/Co/Cu/(Co/Ni)4/Co pseudo-spin-valve, which are correlated with spin-transport properties. At 300 K, magnetization reversal occurs by…
In all van der Waals layered antiferromagnetic semiconductors investigated so far a negative magnetoresistance has been observed in vertical transport measurements, with characteristic trends that do not depend on applied bias. Here we…
Using fully self consistent methods, we study spin transport in realistic, fabricable experimental spin valve systems consisting of two magnetic layers, a superconducting layer, and a spacer normal layer between the ferromagnets. Our…