相关论文: Vertical organic spin valves in perpendicular magn…
We report the discovery of a super-giant tunneling anisotropic magnetoresistance in an epitaxially grown (Ga,Mn)As/GaAs/(Ga,Mn)As structure. The effect arises from a strong dependence of the electronic structure of ferromagnetic…
Magnetoresistive properties of granular Bi-based HTSC with trapped magnetic fields are investigated in the temperature region near superconducting transition . The effect of trapped field and transport current values and orientations on the…
Spin-orbit torque and spin-transfer torque are leading the pathway to the future of spintronic memories. However, both of the mechanisms are suffering from intrinsic limitations. In particular, an external magnetic field is required for…
The Hanle-type spin precession method was carried out associated with non-local magnetoresistance measurement using a highly doped (5\times10^19) silicon channel. The spin diffusion length obtained by the Hanle-method is in good agreement…
The propensity of some materials and multilayers to have a magnetic field dependent resistance, called magnetoresistance, has found commercial applications such as giant magnetoresistance harddisk read heads. But magnetoresistance can also…
It has been shown that the spin Hall effect from heavy transition metals can generate sufficient spin-orbit torque and further produce current-induced magnetization switching in the adjacent ferromagnetic layer. However, if the…
Spin-orbit coupling and breaking of inversion symmetry are necessary ingredients to enable a pure spin current-based manipulation of the magnetization via the spin-orbit torque effect. Currently, magnetic insulator oxides with…
The generation, manipulation and detection of spin-polarized electrons in nanostructures define the main challenges of spin-based electronics[1]. Amongst the different approaches for spin generation and manipulation, spin-orbit coupling,…
Spin Hall effect (SHE) induced reversal of perpendicular magnetization has attracted significant interest, due to its potential to lead to low power memory and logic devices. However, the switching requires an assisted in-plane magnetic…
We report the bias voltage controlled inversions of tunneling magnetoresistance (TMR) in magnetic tunnel junctions composed of Fe3GaTe2 electrodes and hBN tunneling barrier, observed at room temperature. The polarity reversal of TMR occurs…
The precession of magnon pseudospin about the equilibrium pseudofield, the latter capturing the nature of magnonic eigen-excitations in an antiferromagnet, gives rise to the magnon Hanle effect. Its realization via electrically injected and…
Efficient detection of spin-charge conversion is crucial for advancing our understanding of emergent phenomena in spin-orbit-coupled nanostructures. Here, we provide proof of principle of an electrical detection scheme of spin-charge…
We have fabricated a multi terminal lateral mesoscopic metallic spin valve demonstrating spin precession at room temperature, using tunnel barriers in combination with metallic ferromagnetic electrodes as spin injector and detector. The…
The spin-polarized transport is investigated in a new type of magnetic tunnel junction which consists of two ferromagnetic electrodes separated by a magnetic barrier and a nonmagnetic metallic spacer. Based on the transfer matrix method and…
We report the experimental observation of spin-induced magnetoresistance in single-wall carbon nanotubes contacted with high-transparency ferromagnetic electrodes. In the linear regime the spin-induced magnetoresistance oscillates with gate…
The generation of oscillations in the microwave frequency range is one of the most important applications expected from spintronics devices exploiting the spin transfer phenomenon. We report transport and microwave power measurements on…
We have investigated the electrical Hanle effect with magnetic fields applied at an oblique angle ({\theta}) to the spin direction (the oblique Hanle effect, OHE) in CoFe/MgO/semiconductor (SC) contacts by employing a three-terminal…
We explore theoretically the spin transport in nanostructures consisting of a gold quantum dot bridging nonmagnetic electrodes and two Mn12-Ph single molecule magnets (SMMs) that are thiol-bonded to the dot but are not in direct contact…
Spin-orbit torque provides an efficient pathway to manipulate the magnetic state and magnetization dynamics of magnetic materials, which is crucial for energy-efficient operation of a variety of spintronic devices such as magnetic memory,…
Analyzing spin transport of quasi-2D electrons gas moving through a semiconductor wave guide subject to a sectionally homogeneous tilted magnetic field, we found well-defined selection rules for resonant and antiresonant spin carrier…