相关论文: Self-Formation of Sub-10-nm Nanogaps by Silicidati…

Voltage-controlled resistive switching is demonstrated in various gap systems on SiO2 substrate. The nanosized gaps are made by different means using different materials including metal, semiconductor, and metallic nonmetal. The switching…

We have developed a controlled and highly reproducible method of making nanometer-spaced electrodes using electromigration in ambient lab conditions. This advance will make feasible single molecule measurements of macromolecules with…

Graphene is an ideal material for fabricating atomically thin nanometre spaced electrodes. Recently, carbon-based nanoelectrodes have been employed to create single-molecule transistors and phase change memory devices. In spite of the…

The recent development of the superlattice nanowire pattern transfer (SNAP) technique allows for the fabrication of arrays of nanowires at a diameter, pitch, aspect ratio, and regularity beyond competing approaches. Here, we report the…

In this study, we regulate adhesion between thin metal films to produce a large-area vacuum nanogap for electron tunneling. Multilayer structures comprising thin metal films with adjustable adhesion were fabricated. The Cu/Ag/Ti/Si…

NaAlSi and NaAlGe are isostructural and isoelectronic semimetals with topological nodal lines close to the Fermi level. Despite having virtually identical electronic structures, NaAlSi exhibits superconductivity below Tc = 6.8 K, whereas…

For nanoscale electrical characterization and device fabrication it is often desirable to fabricate planar metal electrodes separated by large aspect ratio gaps with interelectrode distances well below 100 nm. We demonstrate a self-aligned…

The spontaneous assembly of particles in suspension provides a strategy for inexpensive fabrication of devices with nanometer-scale control, such as single-electron transistors for memory or logic applications. A scaleable and robust method…

Development of fabrication protocols for large-area plasmonic nanostructures with sub-10 nm gaps with a spatially controlled distribution is critical for their real-world applications. In this work, we develop a simple, cleanroom-free…

A simple and highly reproducible technique is demonstrated for the fabrication of metallic electrodes with nanometer separation. Commercially available bare gold colloidal nanoparticles are first trapped between prefabricated…

Deterministic and versatile approaches to sample preparation on nanoscopic scales are important in many fields including photonics, electronics, biology and material science. However, challenges exist in meeting many nanostructuring…

We have fabricated disordered superconducting nanowires of molybdenium silicide. A molybdenium nanowire is first deposited on top of silicon, and the alloy is formed by rapid thermal annealing. The method allows tuning of the crystal growth…

Assembling nanostructured building blocks into network materials unlocks macroscopic properties inaccessible with monolithic solids, notably toughness and tolerance to electrochemical alloying. A method is reported for large-scale,…

Refractory materials exhibit high damage tolerance, which is attractive for the creation of nanoscale field-emission electronics and optoelectronics applications that require operation at high peak current densities and optical intensities.…

The 10-nm-scale structure in silicon cleavage is studied by the quantum mechanical calculations for large-scale electronic structure. The cleavage process on the order of 10 ps shows surface reconstruction and step formation. These…

We present the fabrication of nanoscale superconducting quantum interference devices (SQUIDs) at the apex of wireframe tips on self-aligned superconducting cantilever probes. The probes are made on silicon wafers using molding techniques in…

Self-assembled electronic devices, such as quantum dots or switchable molecules, need self-assembled nanowires as connections. We explore the growth of conducting Gd disilicide nanowires at step arrays on Si(111). Atomically smooth wires…

Molecules with versatile functionalities and well-defined structures, can serve as building blocks for extreme nanoscale devices. This requires their precise integration into functional heterojunctions, most commonly in the form of…

In this study, we electroplate Cu electrode on Si substrate to realize a large-area vacuum nanogap for electron tunneling. We used cathode coating, cathode rotation, asymmetric current regime, and electrolyte temperature stabilization to…

Electrically driven on-chip electron sources that do not need to be heated have been long pursued because the current thermionic electron sources show the problems of high power consumption, slow temporal response, bulky size, etc., but…