相关论文: Thin film barristor: a gate tunable vertical graph…
Graphene based transistors relying on a conventional structure cannot switch properly because of the absence of an energy gap in graphene. To overcome this limitation, a barristor device was proposed, whose operation is based on the…
Graphene based THz modulators are promising due to the conical band structure and high carrier mobility of graphene. Here, we tune the Fermi level of graphene via electrical gating with the help of ionic liquid to control the THz…
The tuning of electrical circuit resonance with a variable capacitor, or varactor, finds wide application with the most important being wireless telecommunication. We demonstrate an electromechanical graphene varactor, a variable capacitor…
Electrical transport in monolayer graphene on SrTiO3 (STO) thin film is examined in order to promote gate-voltage scaling using a high-k dielectric material. The atomically flat surface of thin STO layer epitaxially grown on Nb-doped STO…
Electrical field control of the carrier density of topological insulators (TI) has greatly expanded the possible practical use of these materials. However, the combination of low temperature local probe studies and a gate tunable TI device…
In this work, we propose a near-field radiative thermal transistor made of two graphene-covered silicon carbide (SiC) plates separated by a nanometer vacuum gap. Thick SiC plates serve as the thermal "source" and "drain", while graphene…
We present a fabrication process for graphene-based devices where a graphene monolayer is suspended above a local metallic gate placed in a trench. As an example we detail the fabrication steps of a graphene field-effect transistor. The…
We demonstrate tunable solid state and flexible graphene field effect devices (FEDs) fabricated using a poly(methylmethacrylate) (PMMA) and lithium fluoride (LiF) composite dielectric. Increasing the concentration of LiF in the composite…
The extraordinary electronic properties of graphene, such as its continuously gate-variable ambipolar field effect and the resulting steep change in resistivity, provided the main thrusts for the rapid advance of graphene electronics. The…
The strong light-matter interaction in graphene over a broad frequency range has opened up a plethora of photonics applications of graphene. The goal of this paper is to present the voltage tunability of plasmons in gated single- and…
We study numerically cross conductances in a four-terminal all-graphene setup. We show that far away from the Dirac point current flows along zigzag directions, giving the possibility to guide the current between terminals using a tunable…
Electric transport of double gated bilayer graphene devices is studied as a function of charge density and bandgap. A top gate electrode can be used to control locally the Fermi level to create a pn junction between the double-gated and…
A capacitive thermoelectric device can harvest thermal energy and convert it to electrical energy by employing a temperature-dependent dielectric material whose permittivity sharply changes with temperature. Electricity can be generated by…
An electro-absorption optical modulator concept based upon a dual-graphene layer is presented. The device consists of a silicon-on-insulator waveguide upon which two graphene layers reside, separated by a thin insulating region. The lower…
We demonstrate with a fully quantum-mechanical approach that graphene can function as gate-controllable transistors for pumped spin currents, i.e., a stream of angular momentum induced by the precession of adjacent magnetizations, which…
The gate-controllable complex conductivity of graphene offers unprecedented opportunities for reconfigurable plasmonics at THz and mid-IR frequencies. However, the requirement of a gating electrode close to graphene and the single `control…
We report on gate hysteresis in resistance on high quality graphene/h-BN devices. We observe a thermal activated hysteretic behavior in resistance as a function of the applied gate voltage at temperatures above 375K. In order to investigate…
Top-gated, few-layer graphene field-effect transistors (FETs) fabricated on thermally-decomposed semi-insulating 4H-SiC substrates are demonstrated. Physical vapor deposited SiO2 is used as the gate dielectric. A two-dimensional hexagonal…
We present a beam splitter in a suspended, ballistic, multiterminal, bilayer graphene device. By using local bottomgates, a p-n interface tilted with respect to the current direction can be formed. We show that the p-n interface acts as a…
We show simultaneous p and n type carrier injection in bilayer graphene channel by varying the longitudinal bias across the channel and the top gate voltage. The top gate is applied electrochemically using solid polymer electrolyte and the…