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相关论文: Tuning electronic structures via epitaxial strain …

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Metal electrodes are a universal element of all electronic devices. Conducting SrRuO3 (SRO) epitaxial thin films have been extensively used as electrodes in complex-oxide heterostructures due to good lattice mismatches with perovskite…

Strain can efficiently modulate the bandgap and carrier mobilities in two-dimensional (2D) materials. Conventional mechanical strain-application methodologies that rely on flexible, patterned or nano-indented substrates are severely limited…

While structure refinement is routinely achieved for simple bulk materials, the accurate structural determination still poses challenges for thin films due on the one hand to the small amount of material deposited on the thicker substrate…

Due to the orthorhombic distortion of the lattice, the electronic hopping integrals along the $a$ and $b$ diagonals, the orthorhombic directions, are slightly different. We calculate their difference in the LDA and find…

强关联电子 · 物理学 2009-11-13 O. P. Sushkov , Wenhui Xie , O. Jepsen , O. K. Andersen , G. A. Sawatzky

We report thermoelectric power experiments in e-doped thin films of SrTiO$_3$ (STO) which demonstrate that the electronic band degeneracy can be lifted through defect management during growth. We show that even small amounts of cationic…

材料科学 · 物理学 2016-04-25 A. Sarantopoulos , E. Ferreiro-Vila , V. Pardo , C. Magen , M. H. Aguirre , F. Rivadulla

The structure, morphology, and electrical properties of epitaxial a-axis oriented thin films of Nd(0.2)Sr(0.8)MnO(3) are reported for thicknesses 10 nm <= t <= 150 nm. Films were grown with both tensile and compressive strain on various…

强关联电子 · 物理学 2015-05-14 K. P. Neupane , J. J. Neumeier , J. L. Cohn

The electronic structures of epitaxially grown films of Ti3AlC2, Ti3SiC2 and Ti3GeC2 have been investigated by bulk-sensitive soft X-ray emission spectroscopy. The measured high-resolution Ti L, C K, Al L, Si L and Ge M emission spectra are…

We present a theoretical study of the effect of electron-electron interactions and Sr doping on the electronic structure of infinite-layer (Nd,Sr)NiO$_2$ using the density functional+dynamical mean-field theory approach. In particular, we…

强关联电子 · 物理学 2022-09-16 I. Leonov , S. Y. Savrasov

For the Sr2-xIrO4 system, recent work pointed out the abnormal electronic and magnetic properties around the critical point. Here, to understand Sr-vacancy effect on spin-orbit coupled Mott insulator Sr2IrO4, the electronic structure and…

强关联电子 · 物理学 2019-01-07 Jie Cheng , Shengli Liu , Bin Li , Haiyun Wang , Yu Wang , Wei Xu

The effects of tetragonal strain on electronic and magnetic properties of strontium-doped lanthanum manganite, La_{2/3}Sr_{1/3}MnO_3 (LSMO), are investigated by means of density-functional methods. As far as the structural properties are…

材料科学 · 物理学 2009-11-11 Chunlan Ma , Zhongqin Yang , Silvia Picozzi

Understanding charge transfer at oxide interfaces is crucial for designing materials with emergent electronic and magnetic properties, especially in systems where strong electron correlations and spin-orbit coupling coexist.…

We report the epitaxial growth and the electrical properties, especially the metal-to-insulator transition (MIT), of vanadium dioxide (VO2) thin films synthesized on LSAT (111) ([LaAlO3]0.3[Sr2AlTaO6]0.7) substrates by pulsed laser…

材料科学 · 物理学 2019-06-11 Yang Liu , Shanyuan Niu , Thomas Orvis , Haimang Zhang , Han Wang , Jayakanth Ravichandran

Electride materials offer attractive physical properties due to their loosely bound electrons. Ca2N, an electride in the two-dimensional (2D) form was successfully recently synthesized. We conducted extensive first-principles calculations…

计算物理 · 物理学 2018-01-04 Bohayra Mortazavi , Golibjon R Berdiyorov , Masoud Shahrokhi , Timon Rabczuk

In this paper, we have studied the effect of strain relaxation on magneto-transport properties of La_0.7Ca_0.3MnO_3 epitaxial films (200 nm thick), which were deposited by pulsed laser deposition technique under identical conditions. All…

材料科学 · 物理学 2009-11-11 P. K. Siwach , H. K. Singh , O. N. Srivastava

Due to the strong quantum confinement effect, few-layer {\gamma}-InSe exhibits a layer-dependent bandgap, spanning the visible and near infrared regions, and thus recently draws tremendous attention. As a two-dimensional material, the…

介观与纳米尺度物理 · 物理学 2018-03-20 Chaoyu Song , Fengren Fan , Ningning Xuan , Shenyang Huang , Guowei Zhang , Chong Wang , Zhengzong Sun , Hua Wu , Hugen Yan

Motivated by an experimental report of iridate superlattices, we performed first-principle electronic structure calculations for SrIrO$_3$/SrTiO$_3$. Heterostructuring causes SrIrO$_3$ to become Sr$_2$IrO$_4$-like, and the system has the…

强关联电子 · 物理学 2014-07-01 Kang-Hwan Kim , Heung-Sik Kim , Myung Joon Han

Coherent epitaxial growth allows to produce crystalline films with strained structures which are unstable in the bulk. Thereby, the relationship between the lattice parameters of the overlayer in the interface plane, $(a,b)$, and its…

材料科学 · 物理学 2015-02-03 Stephan Schönecker , Manuel Richter , Klaus Koepernik , Helmut Eschrig

Huge deformations of the crystal lattice can be achieved in materials with inherent structural instability by epitaxial straining. By coherent growth on seven different substrates the in-plane lattice constants of 50 nm thick Fe70Pd30 films…

We investigated the temperature-dependent evolution of the electronic structure of the Jeff,1/2 Mott insulator Sr2IrO4 using optical spectroscopy. The optical conductivity spectra $\sigma(\omega)$ of this compound has recently been found to…

强关联电子 · 物理学 2009-10-23 S. J. Moon , Hosub Jin , W. S. Choi , J. S. Lee , S. S. A. Seo , J. Yu , G. Cao , T. W. Noh , Y. S. Lee

The use of piezoelectric substrates enables a dynamic observation of strain dependent properties of functional materials. Based on studies with La1.85Sr0.15CuO4 we extended this approach to the iron arsenic superconductors represented by…