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相关论文: Electronic Properties of Twisted Trilayer Graphene

200 篇论文

Here we show that twisted graphene trilayer made by misoriented stacking a graphene monolayer on top of a Bernal graphene bilayer can exhibit rich and tailored electronic properties. For the case that the graphene monolayer and bilayer are…

介观与纳米尺度物理 · 物理学 2014-08-13 Jia-Bin Qiao , Lin He

Twist, as a simple and unique degree of freedom, could lead to enormous novel quantum phenomena in bilayer graphene. A small rotation angle introduces low-energy van Hove singularities (VHSs) approaching the Fermi level, which result in…

材料科学 · 物理学 2018-02-07 Wei-Jie Zuo , Jia-Bin Qiao , Dong-Lin Ma , Long-Jing Yin , Gan Sun , Jun-Yang Zhang , Li-Yang Guan , Lin He

By means of atomistic tight-binding calculations, we investigate the effects of uniaxial strain on the electronic bandstructure of twisted graphene bilayer. We find that the bandstructure is dramatically deformed and the degeneracy of the…

介观与纳米尺度物理 · 物理学 2015-07-13 Viet Hung Nguyen , Philippe Dollfus

Here we study the evolution of local electronic properties of a twisted graphene bilayer induced by a strain and a high curvature. The strain and curvature strongly affect the local band structures of the twisted graphene bilayer; the…

介观与纳米尺度物理 · 物理学 2015-06-05 Wei Yan , Wen-Yu He , Zhao-Dong Chu , Mengxi Liu , Lan Meng , Rui-Fen Dou , Yanfeng Zhang , Zhongfan Liu , Jia-Cai Nie , Lin He

Electronic properties of the graphene layer sandwiched between two hexagonal boron nitride sheets have been studied using the first-principles calculations and the minimal tight-binding model. It is shown that for the ABC-stacked structure…

材料科学 · 物理学 2010-11-10 J. Slawinska , I. Zasada , P. Kosinski , Z. Klusek

Rotated graphene bilayers form an exotic class of nanomaterials with fascinating electronic properties governed by the rotation angle theta. For large rotation angles, the electron eigenstates are restricted to one layer and the bilayer…

介观与纳米尺度物理 · 物理学 2016-06-29 Guy Trambly de Laissardiere , Omid Faizy Namarvar , Didier Mayou , Laurence Magaud

We investigate the band structure of ABCA-tetralayer graphene (ABCA-TTLG) subjected to an external potential $V$ applied between top and bottom layers. Using the tight-binding model, including the nearest $t$ and next-nearest-neighbor $t'$…

介观与纳米尺度物理 · 物理学 2019-03-15 Abderrahim El Mouhafid , Ahmed Jellal

Close to a magical angle, twisted bilayer graphene (TBLG) systems exhibit isolated flat electronic bands and, accordingly, strong electron localization. TBLGs have hence been ideal platforms to explore superconductivity, correlated…

介观与纳米尺度物理 · 物理学 2021-05-28 V. Hung Nguyen , D. Paszko , M. Lamparski , B. Van Troeye , V. Meunier , J. -C. Charlier

Rotated graphene multilayers form a new class of graphene related systems with electronic properties that drastically depend on the rotation angles. It has been shown that bilayers behave like two isolated graphene planes for large rotation…

介观与纳米尺度物理 · 物理学 2012-09-11 G. Trambly de Laissardière , D. Mayou , L. Magaud

Helical twisted trilayer graphene exhibits zero-energy flat bands with large degeneracy in the chiral limit. The flat bands emerge at a discrete set of magic twist angles and feature properties intrinsically distinct from those realized in…

介观与纳米尺度物理 · 物理学 2023-08-08 Daniele Guerci , Yuncheng Mao , Christophe Mora

We report on the transport properties of ABC and ABA stacked trilayer graphene using dual, locally gated field effect devices. The high efficiency and large breakdown voltage of the HfO2 top and bottom gates enables independent tuning of…

介观与纳米尺度物理 · 物理学 2013-02-15 K. Zou , Fan Zhang , C. Clapp , A. H. MacDonald , J. Zhu

The electronic properties of two-dimensional materials and their heterostructures can be dramatically altered by varying the relative angle between the layers. This makes it theoretically possible to realize a new class of twistable…

介观与纳米尺度物理 · 物理学 2018-09-03 Rebeca Ribeiro-Palau , Changjian Zhang , Kenji Watanabe , Takashi Taniguchi , James Hone , Cory R. Dean

Controlling the stacking and rotational registry of graphene layers provides a powerful handle on atomic-scale structural reconstructions that alter the electronic landscape at the nanoscale. In particular, this governs how massless and…

We have used ab initio density functional theory, incorporating van der Waals corrections, to study twisted bilayer graphene (TBLG) where Stone-Wales defects or monovacancies are introduced in one of the layers. We compare these results to…

材料科学 · 物理学 2015-04-30 Kanchan Ulman , Shobhana Narasimhan

We study a 2D continuum model of electronic transport in twisted bilayer graphene (TBG) at commensurate angles. We use two honeycomb potentials with the symmetries of graphene, either sharing a common origin (AA stacking) or shifted by a…

数学物理 · 物理学 2026-05-19 Tal Malinovitch

We have used scanning tunneling microscopy and spectroscopy to resolve the spatial variation of the density of states of twisted graphene layers on top of a highly oriented pyrolytic graphite substrate. Owing to the twist a moire pattern…

Twisted bilayer graphene exhibits isolated, relatively flat electronic bands near charge neutrality when the interlayer rotation is tuned to specific magic angles. These small misalignments, typically below 1.1{\deg}, result in long-period…

介观与纳米尺度物理 · 物理学 2026-03-26 Antonio Palamara , Michele Pisarra , Antonello Sindona

Stacked graphene multilayers with a small relative twist angle between each of the layers have been found to host flat bands at a series of magic angles. We consider the effect that Dirac point asymmetry between the layers, and in…

介观与纳米尺度物理 · 物理学 2024-12-31 Adam Eaton , Yantao Li , Herbert Fertig , Babak Seradjeh

In twisted bilayer graphene (TBLG), chiral tunneling can be tuned by parameters such as the twist angle, barrier height, and Fermi energy. This differs from the tunneling behavior observed in monolayer and Bernal bilayer graphene, where…

介观与纳米尺度物理 · 物理学 2025-07-29 Nadia Benlakhouy , El Mustapha Feddi , Abdelouahed El Fatimy

The electronic tunneling properties of the two stable forms of trilayer graphene (TLG), rhombohedral ABC and Bernal ABA, are examined for pn and pnp junctions as realized by using a single gate (SG) or a double gate (DG). For the…

介观与纳米尺度物理 · 物理学 2013-05-28 B. Van Duppen , S. H. R. Sena , F. M. Peeters