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相关论文: Topological kink states at a tilt boundary in gate…

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Based on the tight-binding model calculations and photonic experimental visualization on graphene, we report the domain-wall-induced gapped topological kink states and topological corner states. In graphene, domain walls with gapless…

介观与纳米尺度物理 · 物理学 2020-05-26 Yuting Yang , Ziyuan Jia , Yijia Wu , Zhi-Hong Hang , Hua Jiang , X. C. Xie

Gapped bilayer graphene can support the presence of intragap states due to kink gate potentials applied to the graphene layers. Electrons in these states display valley-momentum locking, which makes them attractive for topological…

介观与纳米尺度物理 · 物理学 2022-02-17 Nassima Benchtaber , David Sánchez , Llorenç Serra

We propose a general and tunable platform to realize high-density arrays of quantum spin-valley Hall kink (QSVHK) states with spin-valley-momentum locking based on a two-dimensional hexagonal topological insulator. Through the analysis of…

介观与纳米尺度物理 · 物理学 2021-09-10 Tong Zhou , Shuguang Cheng , Michael Schleenvoigt , Peter Schuffelgen , Hua Jiang , Zhongqin Yang , Igor Zutic

Recent experiments [L. Ju et al., Nature, 2015, 520, 650] confirm the existence of gapless states at domain walls created in gated bilayer graphene, when the sublattice stacking is changed from AB to BA. These states are significant because…

介观与纳米尺度物理 · 物理学 2016-03-15 Wlodzimierz Jaskolski , Marta Pelc , Leonor Chico , Andres Ayuela

An established way of realizing topologically protected states in a two-dimensional electron gas is by applying a perpendicular magnetic field thus creating quantum Hall edge channels. In electrostatically gapped bilayer graphene…

介观与纳米尺度物理 · 物理学 2022-08-17 Fabian R. Geisenhof , Felix Winterer , Anna M. Seiler , Jakob Lenz , Ivar Martin , R. Thomas Weitz

We show that gated bilayer graphene hosts a strong topological insulator (TI) phase in the presence of Rashba spin-orbit (SO) coupling. We find that gated bilayer graphene under preserved time-reversal symmetry is a quantum valley Hall…

材料科学 · 物理学 2011-12-15 Zhenhua Qiao , Wang-Kong Tse , Hua Jiang , Yugui Yao , Qian Niu

We investigate the electronic and transport properties of gated bilayer graphene with one corrugated layer, which results in a stacking AB/BA boundary. When a gate voltage is applied to one layer, topologically protected gap states appear…

材料科学 · 物理学 2015-09-30 M. Pelc , W. Jaskólski , A. Ayuela , L. Chico

We report on a theoretical study of one-dimensional (1D) states localized at few-layer graphene system ribbon edges, and at interfaces between few-layer graphene systems with different valley Hall conductivities. These 1D states are…

介观与纳米尺度物理 · 物理学 2011-08-11 Jeil Jung , Fan Zhang , Zhenhua Qiao , Allan H. MacDonald

Trilayer graphene allows systematic control of its electronic structure through stacking sequence and twist geometry, providing a versatile platform for correlated states. Here we report magnetotransport in alternating twisted trilayer…

介观与纳米尺度物理 · 物理学 2026-02-05 Dohun Kim , Gyeoul Lee , Nicolas Leconte , Seyoung Jin , Takashi Taniguchi , Kenji Watanabe , Jeil Jung , Gil Young Cho , Youngwook Kim

Particle-hole symmetry plays an important role for the characterization of topological phases in solid-state systems. It is found, for example, in free-fermion systems at half filling, and it is closely related to the notion of…

Edge states of a topological insulator can be used to explore fundamental science emerging at the interface of low dimensionality and topology. Achieving a robust conductance quantization, however, has proven challenging for helical edge…

介观与纳米尺度物理 · 物理学 2024-08-16 Ke Huang , Hailong Fu , Kenji Watanabe , Takashi Taniguchi , Jun Zhu

The so called quantum spin Hall phase is a topologically non trivial insulating phase that is predicted to appear in graphene and graphene-like systems. In this work we address the question of whether this topological property persists in…

介观与纳米尺度物理 · 物理学 2015-07-08 N. A. Garcia-Martinez , J. L. Lado , J. Fernandez-Rossier

We propose a topological understanding of the quantum spin Hall state without considering any symmetries, and it follows from the gauge invariance that either the energy gap or the spin spectrum gap needs to close on the system edges, the…

介观与纳米尺度物理 · 物理学 2012-07-09 Huichao Li , L. Sheng , D. Y. Xing

Low-dimensional electronic systems have traditionally been obtained by electrostatically confining electrons, either in heterostructures or in intrinsically nanoscale materials such as single molecules, nanowires, and graphene. Recently, a…

介观与纳米尺度物理 · 物理学 2014-02-12 A. F. Young , J. D. Sanchez-Yamagishi , B. Hunt , S. H. Choi , K. Watanabe , T. Taniguchi , R. C. Ashoori , P. Jarillo-Herrero

Epitaxial bismuthene on SiC(0001) hosts symmetry-protected metallic edge states within a large bulk band gap, establishing it as a promising two-dimensional topological insulator for hightemperature quantum spin Hall (QSH) transport. Here…

We theoretically study the correlated insulator states, quantum anomalous Hall (QAH) states, and field-induced topological transitions between different correlated states in twisted multilayer graphene systems. Taking twisted…

介观与纳米尺度物理 · 物理学 2022-06-02 Shihao Zhang , Xi Dai , Jianpeng Liu

We describe recent progress in our understanding of the interplay between interactions, symmetry, and topology in states of quantum matter. We focus on a minimal generalization of the celebrated topological band insulators to interacting…

强关联电子 · 物理学 2015-08-05 T. Senthil

Experiments in gated bilayer graphene with stacking domain walls present topological gapless states protected by no-valley mixing. Here we research these states under gate voltages using atomistic models, which allow us to elucidate their…

介观与纳米尺度物理 · 物理学 2018-11-14 W. Jaskólski , M. Pelc , Garnett W. Bryant , Leonor Chico , A. Ayuela

Topological insulators are a new class of insulators in which a bulk gap for electronic excitations is generated by strong spin orbit coupling. These novel materials are distinguished from ordinary insulators by the presence of gapless…

Magic-angle twisted bilayer graphene has recently become a thriving material platform realizing correlated electron phenomena taking place within its topological flat bands. Several numerical and analytical methods have been applied to…

强关联电子 · 物理学 2021-09-17 Bin-Bin Chen , Yuan Da Liao , Ziyu Chen , Oskar Vafek , Jian Kang , Wei Li , Zi Yang Meng
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