相关论文: Longitudinal interlayer magnetoresistance in quasi…
We develop the theory of transverse magnetoresistance in layered quasi-two-dimensional metals. Using the Kubo formula and harmonic expansion, we calculate intralayer conductivity in a magnetic field perpendicular to conducting layers. The…
Slow oscillations (SlO) of magnetoresistance is a convenient tool to measure electronic structure parameters in quasi-two-dimensional metals. We study the possibility to apply this method to multi-band conductors, e.g. to iron-based…
Explicit expressions for magnetoresistance $R$ of planar and layered strongly inhomogeneous two-phase systems are obtained, using exact dual transformation, connecting effective conductivities of in-plane isotropic two-phase systems with…
The resistance of multilayers with interface roughness on a length scale which is large compared to the atomic spacing is computed in several cases via the Boltzmann equation. This type of roughness is common in magnetic multilayers. When…
We study the dependence of perpendicular-current magnetoresistance in magnetic multilayers on the angle between the magnetizations of the layers. This dependence varies with the thickness of one of the layers, and is different for…
Resistivity measurements of a few-layer black phosphorus (bP) crystal in parallel magnetic fields up to 45 T are reported as a function of the angle between the in-plane field and the source-drain (S-D) axis of the device. The…
The longitudinal magnetoresistance (MR) is assumed to be hardly realized as the Lorentz force does not work on electrons when the magnetic field is parallel to the current. However, in some cases, longitudinal MR becomes large, which…
The change of a material's electrical resistance (R) in response to an external magnetic field (B) provides subtle information for the characterization of its electronic properties and has found applications in sensor and storage related…
We study theoretically the resistance at the interface between the two planar systems with different lattice constants a and b. The resistance and the effect of the magnetic field depends sensitively on the ratio a/b. The size of the…
It is shown that in rather strong magnetic field the interlayer electron conductivity is exponentially damped by the Coulomb barrier arising from the formation of polaron around each localized electron state. The theoretical model is…
We present comparative studies of the orientation effect of a strong magnetic field on the interlayer resistance of $\alpha$-(BEDT-TTF)$_2$KHg(SCN)$_4$ samples characterized by different crystal quality. We find striking differences in…
A positive, non-saturating and dominantly linear magnetoresistance is demonstrated to occur in the surface state of a topological insulator having a wavevector-linear energy dispersion together with a finite positive Zeeman energy…
Magnetoresistance, that is, the change of the resistance with the magnetic field, is usually a quadratic function of the field strength. A linear magnetoresistance usually reveals extraordinary properties of a system. In the quantum limit…
Linear magnetoresistance occurs in semiconductors as a consequence of strong electrical disorder and is characterized by nonsaturating magnetoresistance that is proportional to the applied magnetic field. By investigating a disordered…
Intriguing novel phenomena in lead films inspire new understanding of quantum physics, such as quantum size effect and quantum phase transitions etc. The improvement of the sample quality makes it even more promising to explore the…
We report on theoretical studies of the recently discovered negative giant magnetoresistance in ultraclean two-dimensional electron systems at low temperatures. We adapt a transport model to a ultraclean scenario and calculate the elastic…
Studies of interlayer transport in layered metals have generally made use of zero temperature conductivity expressions to analyze angle-dependent magnetoresistance oscillations (AMRO). However, recent high temperature AMRO experiments have…
Different types of angular magnetoresistance oscillations in quasi-one-dimensional layered materials, such as organic conductors (TMTSF)2X, are explained in terms of Aharonov-Bohm interference in interlayer electron tunneling. A…
The field dependence of interlayer magnetoresistance of the pressurized (to the normal state) layered organic metal $\alpha $-(BEDT-TTF)$_{2}$KHg(SCN)$_{4}$ is investigated. The high quasi-two-dimensional anisotropy, when the interlayer…
Magnetization (M) and magnetoresistance (MR) measurements on polycrystalline R2Mn3Si5 (R = Tb, Dy and Ho) compounds (tetragonal, space group P4/mnc) have been carried out in the temperature range of 2 K-300 K, in various applied fields.…