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相关论文: Spin-Droplet State of an Interacting 2D Electron S…

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The influence of disorder and interaction on the ground state polarization of the two-dimensional (2D) correlated electron gas is studied by numerical investigations of unrestricted Hartree-Fock equations. The ferromagnetic ground state is…

强关联电子 · 物理学 2009-11-10 M. Nita , V. Dinu , A. Aldea , B. Tanatar

In current work, we investigate the density and temperature dependence of polarization parameter; using the relativistic formalism for the electron-electron interaction within the Fermi liquid model. we calculate the spin dependent…

统计力学 · 物理学 2011-03-28 H. Gholizade , D. Momeni

The magnetoresistance of a low carrier density, disordered GaAs based two-dimensional (2D) electron gas has been measured in parallel magnetic fields up to 32 T. The feature in the resistance associated with the complete spin polarization…

介观与纳米尺度物理 · 物理学 2009-11-09 B. A. Piot , D. K. Maude , U. Gennser , A. Cavanna , D. Mailly

The low-temperature resistivity of a SiGe 2-dimensional hole gas has been studied using the gate controlled carrier density as a parameter. A metal-insulator transition is seen both in the temperature and in the electric field behaviour.…

介观与纳米尺度物理 · 物理学 2007-05-23 V. Senz , U. Doetsch , U. Gennser , T. Ihn , T. Heinzel , K. Ensslin , R. Hartmann , D. Gruetzmacher

The competition between kinetic energy and Coulomb interactions in electronic systems can lead to complex many-body ground states with competing superconducting, charge density wave, and magnetic orders. Here we study the low temperature…

We utilize simulations of electron scattering by a chain of dynamical quantum spins, to analyze the interplay between the spin transfer effect and the magnetization dynamics. We show that the complex interactions between the spin-polarized…

材料科学 · 物理学 2021-04-21 Neil Tramsen , Alexander Mitrofanov , Sergei Urazhdin

We have used a field-penetration method to measure thermodynamic compressibility of a moderately interacting two-dimensional electron system ($r_{s}$ $\approx$ 0.5-3) in a three terminal GaAs/AlGaAs device, fabricated with an epitaxial…

强关联电子 · 物理学 2009-09-29 S. C. Dultz , B. Alavi , H. W. Jiang

Two-dimensional (2D) electrons in an in-plane magnetic field become fully spin polarized above a field B_P, which we can determine from the in-plane magnetoresistance. We perform such measurements in modulation-doped AlAs electron systems,…

介观与纳米尺度物理 · 物理学 2009-11-07 E. P. De Poortere , E. Tutuc , Y. P. Shkolnikov , K. Vakili , M. Shayegan

We have studied the zero magnetic field resistivity of unique high- mobility two-dimensional electron system in silicon. At very low electron density (but higher than some sample-dependent critical value, $n_{cr}\sim 10^{11}$ cm$^{-2}$),…

凝聚态物理 · 物理学 2009-10-22 S. V. Kravchenko , G. V. Kravchenko , J. E. Furneaux , V. M. Pudalov , M. D'Iorio

We consider quasi-two-dimensional gas of electrons in a typical Si-MOSFET, assuming repulsive contact interaction between electrons. Magnetisation and susceptibility are evaluated within the mean-field approach. Finite thickness of the…

介观与纳米尺度物理 · 物理学 2017-06-28 D. I. Golosov

It is shown that the electronic conduction in silicon-on-insulator (SOI) layers exhibits a metallic regime which is very similar to that in high-mobility Si-metal oxide semiconductor structures (MOS). The peak in the electron mobility…

强关联电子 · 物理学 2007-05-23 G. Brunthaler , A. Prinz , G. Pillwein , P. E. Lindelof , J. Ahopelto

The temperature dependence of conductivity $\sigma (T)$ of a two-dimensional electron system in silicon has been studied in parallel magnetic fields B. At B=0, the system displays a metal-insulator transition at a critical electron density…

强关联电子 · 物理学 2009-11-07 Kevin Eng , X. G. Feng , Dragana Popovic , S. Washburn

Magnetic, dielectric, and magnetoelectric properties in a spin-state transition system are examined, motivated by the recent discovery of a multiferroic behavior in a cobalt oxide. We construct an effective model Hamiltonian based on the…

强关联电子 · 物理学 2018-06-13 Makoto Naka , Eriko Mizoguchi , Joji Nasu , Sumio Ishihara

We have measured the conductivity of high-mobility (001) Si metal-oxide-semiconductor field effect transistors (MOSFETs) over wide ranges of electron densities n=(1.8-15)x10^11cm^2, temperatures T=30mK-4.2K, and in-plane magnetic fields…

无序系统与神经网络 · 物理学 2013-03-05 N. N. Klimov , D. A. Knyazev , O. E. Omel'yanovskii , V. M. Pudalov , H. Kojima , M. E. Gershenson

The in-plane magnetoconductance of the strongly interacting two-dimensional electron system in a silicon MOSFET (metal-oxide-semiconductor-field-effect transistor) exhibits an unmistakeable kink at a well-defined electron density, $n_k$.…

强关联电子 · 物理学 2019-04-12 Shiqi Li , Qing Zhang , Pouyan Ghaemi , M. P. Sarachik

We present a numerical study of magnetic phases of the 2D electron gas near freezing. The calculations are performed by diffusion Monte Carlo in the fixed node approximation. At variance with the 3D case we find no evidence for the…

强关联电子 · 物理学 2009-10-31 D. Varsano , S. Moroni , G. Senatore

We consider the effect of potential disorder on magnetic properties of a two-dimensional metallic system (with conductance $g\gg 1$) when interaction in the triplet channel is so strong that the system is close to the threshold of the…

无序系统与神经网络 · 物理学 2009-10-31 B. N. Narozhny , I. L. Aleiner , A. I. Larkin

Spin-transfer torques in a nanocontact to an extended magnetic film can create spin waves that condense to form dissipative droplet solitons. Here we report an experimental study of the temperature dependence of the current and applied…

介观与纳米尺度物理 · 物理学 2017-06-07 Sergi Lendínez , Jinting Hang , Saül Vélez , Joan Manel Hernàndez , Dirk Backes , Andrew D. Kent , Ferran Macià

Recent experiments on the amorphous magnetic semiconductor Gd_x Si_{1-x}, Phys. Rev. Lett. 77, 4652 (1996), ibid 83, 2266 (1999), ibid 84, 5411 (2000), ibid 85, 848 (2000), have revealed an insulator-metal transition (i-m-t), as a function…

强关联电子 · 物理学 2009-11-07 Sanjeev Kumar , Pinaki Majumdar

The interplay between strong Coulomb interactions and randomness has been a long-standing problem in condensed matter physics. According to the scaling theory of localization, in two-dimensional systems of noninteracting or weakly…

强关联电子 · 物理学 2007-05-23 S. V. Kravchenko , M. P. Sarachik