相关论文: Spin-Droplet State of an Interacting 2D Electron S…
Magnetotransport in 2DES's formed in Si-MOSFET's and Si/SiGe quantum wells at low temperatures is reported. Metallic temperature dependence of resistivity is observed for the n-Si/SiGe sample even in a parallel magnetic field of 9T, where…
We report measurements of the resistance of silicon MOSFETs as a function of temperature in high parallel magnetic fields where the 2D system of electrons has been shown to be fully spin-polarized. A magnetic field suppresses the metallic…
We have studied the strongly interacting, two-valley two-dimensional (2D) electron system in ultrahigh mobility SiGe/Si/SiGe quantum wells in parallel magnetic fields strong enough to completely polarize the electron spins thus making the…
A novel method invented to measure the minute thermodynamic spin magnetization of dilute two dimensional fermions is applied to electrons in a silicon inversion layer. Interplay between the ferromagnetic interaction and disorder enhances…
The resistivities of the dilute, strongly-interacting 2D electron systems in the insulating phase of a silicon MOSFET are the same for unpolarized electrons in the absence of magnetic field and for electrons that are fully spin polarized by…
We report temperature and density dependences of the spin susceptibility of strongly interacting electrons in Si inversion layers. We measured (i) the itinerant electron susceptibility $\chi^*$ from the Shubnikov-de Haas oscillations in…
We argue that the magnetic susceptibility data, Refs. 1-3, for the low-density two-dimensional (2D) silicon-based electron gas indicate that magnetically active electrons are localised in spin-droplets. The droplets exist in both the…
We measure thermodynamic magnetization of a low-disordered, strongly correlated two-dimensional electron system in silicon. Pauli spin susceptibility is observed to grow critically at low electron densities - behavior that is characteristic…
In the ballistic regime, the metallic temperature dependence of the conductivity in a two-dimensional electron system in silicon is found to change non-monotonically with the degree of spin polarization. In particular, it fades away just…
The temperature dependence of 2D magnetoresistance in an applied in-plane magnetic field is theoretically considered for electrons in Si MOSFETs within the screening theory for long-range charged impurity scattering limited carrier…
We have studied the magnetic and transport properties of an ultra-low-resistivity two-dimensional electron system in a Si/SiGe quantum well. The spin polarization increases linearly with the in-plane magnetic field and the enhancement of…
We have investigated the local magneto-transport in high-quality 2D electron systems at low carrier densities. The positive magneto-resistance in perpendicular magnetic field in the strongly insulating regime has been measured to evaluate…
We report measurements of dm/dn in Si MOSFET, where m is the magnetization of the two-dimensional electron gas and n is its density. We extended the density range of measurements from well in the metallic to deep in the insulating region.…
We evaluate the charge and longitudinal spin response functions of a two-dimensional electron gas with $e^2/r$ interactions in an arbitrary state of spin polarization, using a structurally self-consistent approach to treat exchange and…
The transport properties of interacting electrons for which the spin degree of freedom is taken into account are numerically studied for small two dimensional diffusive clusters. On-site electron-electron interactions tend to delocalize the…
Recent thermodynamic measurements on two-dimensional (2D) electron systems have found diverging behavior in the magnetic susceptibility and appearance of ferromagnetism with decreasing electron density. The critical densities for these…
We propose a mechanism for the recently reported destabilization by an in-plane magnetic field of the conducting phase of low density electrons in 2D. We apply our self-consistent approach based on the memory function formalism to the fully…
We have made quantitative measurements of the spin polarization of two-dimensional (2D) GaAs (100) electrons and GaAs (311)A holes, as a function of an in-plane magnetic field. The functional form of the in-plane magnetoresistance is shown…
The temperature dependences of the conductivity \sigma(T) for strongly interacting 2D electron system in silicon have been analyzed both in zero magnetic field and in spin-polarizing magnetic field of 14.2T, parallel to the sample plane.…
We report thermodynamic magnetization measurements of a 2-dimensional electron gas for several high mobility Si-MOSFETs. The low-temperature magnetization is shown to be strongly sub-linear function of the magnetic field. The susceptibility…