相关论文: Small quantum dots of diluted magnetic III-V semic…
This paper investigates quantum dots (QDs), which are miniature semiconductor structures with remarkable optical and electrical properties due to quantum confinement processes. Traditional QDs, such as CdTe, have been extensively…
We present efficient methods to reliably characterize and tune gate-defined semiconductor spin qubits. Our methods are designed to target the tuning procedures of semiconductor double quantum dot in GaAs heterostructures, but can easily be…
The two- to three-dimensional growth transition in the InAs/GaAs(001) heterostructure has been investigated by atomic force microscopy. The kinetics of the density of three dimensional quantum dots evidences two transition thresholds at…
The influences of Si sheet doping levels on the properties of InAs/GaAs quantum dots (QDs) are investigated by atomic force microscopy (AFM) and photoluminescence (PL). AFM measurements reveal that Si sheet doping doesn't change the…
Using a laterally-fabricated quantum-dot (QD) spin-valve device, we experimentally study the Kondo effect in the electron transport through a semiconductor QD with an odd number of electrons (N). In a parallel magnetic configuration of the…
Weak spin-orbit coupling produces very limited current induced spin accumulation in semiconductor nanostructures. We demonstrate a possibility to increase parametrically the spin polarization using the Kondo effect. As a model object we…
Planar germanium quantum wells have recently been shown to host hard-gapped superconductivity. Additionally, quantum dot spin qubits in germanium are well-suited for quantum information processing, with isotopic purification to a nuclear…
The properties of a semiconductor get drastically modified when the crystal point group symmetry is broken under an arbitrary strain. We investigate the family of semiconductors consisting of GaAs, GaSb, InAs and InSb, considering their…
We study electronic configurations in a single pair of vertically coupled self-assembled InAs quantum dots, holding just a few electrons. By comparing the experimental data of non-linear single-electron transport spectra in a magnetic field…
InAs semiconductor quantum dots (QDs) emitting in the near infrared are promising platforms for on-demand single-photon sources and spin-photon interfaces. However, the realization of quantum-photonic nanodevices emitting in the second and…
The mesoscopic spin system formed by the 10E4-10E6 nuclear spins in a semiconductor quantum dot offers a unique setting for the study of many-body spin physics in the condensed matter. The dynamics of this system and its coupling to…
A semiconductor quantum dot (QD) can generate highly indistinguishable single-photons at a high rate. For application in quantum communication and integration in hybrid systems, control of the QD optical properties is essential.…
Built-in electrostatic fields in Zincblende quantum dots originate mainly from - (1) the fundamental crystal atomicity and the interfaces between two dissimilar materials, (2) the strain relaxation, and (3) the piezoelectric polarization.…
In recent years semiconducting qubits have undergone a remarkable evolution, making great strides in overcoming decoherence as well as in prospects for scalability, and have become one of the leading contenders for the development of…
Using spin-1/2 description of valence holes and Kondo coupling between local spins and carriers, GaAs-based III-V diluted magnetic semiconductors (DMS)are studied in the coherent potential approximation(CPA). Our calculated relation of…
A systematic study of the impact of annealing on the electronic properties of single InAs/GaAs quantum dots (QDs) is presented. Single QD cathodoluminescence spectra are recorded to trace the evolution of one and the same QD over several…
We study the electronic and magnetic properties of multilayer quantum dots (MQDs) of graphite in the nearest-neighbor approximation of tight-binding model. We calculate the electronic density of states and orbital susceptibility of the…
We use an improved version of the standard effective mass approximation model to describe quantum effects in nanometric semiconductor Quantum Dots (QDs). This allows analytic computation of relevant quantities to a very large extent. We…
We show that the electron and hole Lande g factors in self-assembled III-V quantum dots have a rich structure intermediate between that expected for paramagnetic atomic impurities and for bulk semiconductors. Strain, dot geometry, and…
We study squeezing of the spin uncertainties by quantum non-demolition (QND) measurement in non-polarized spin ensembles. Unlike the case of polarized ensembles, the QND measurements can be performed with negligible back-action, which…