相关论文: Band engineering in dilute nitride and bismide sem…

Composite oxides have been indeed proved to be valuable materials in optoelectronic applications. The combination of indium oxide and gallium oxide and other materials can lead to enhanced optical and electronic properties, making them…

Ultra-wide bandgap (UWBG) semiconductors are poised to transform power electronics by surpassing the capabilities of established wide bandgap materials, such as GaN and SiC, owing to their capability to operate at higher voltage, frequency,…

We study the electronic properties of GaAs nanowires composed of both the zincblende and wurtzite modifications using a ten-band k.p model. In the wurtzite phase, two energetically close conduction bands are of importance for the…

The Bi/Ag(111), Pb/Ag(111), and Sb/Ag(111) surface alloys exhibit a two-dimensional band structure with a strongly enhanced Rashba-type spin-splitting, which is in part attributed to the structural asymmetry resulting from an outward…

We study the stability and electronic structure of magic-angle twisted bilayer graphene on the hexagonal boron nitride (TBG/BN). Full relaxation has been performed for commensurate supercells of the heterostructures with different twist…

Ultraviolet nanosecond laser annealing (UV-NLA) proves to be an important technique, particularly when tightly controlled heating and melting are necessary. In the realm of semiconductor technologies, the significance of nanosecond laser…

The stability and electronic structure of a single monatomic Al wire has been studied using the ab initio pseudopotential method. The Al wire undergoes two structural rearrangements under compression, i.e., zigzag configurations at angles…

Using spectroscopic ellipsometry measurements on GaP$_{1-x}$Bi$_{x}$/GaP epitaxial layers up to $x = 3.7$% we observe a giant bowing of the direct band gap ($E_{g}^{\Gamma}$) and valence band spin-orbit splitting energy…

The detailed nature of electronic states mediating ferromagnetic coupling in dilute magnetic semiconductors, specifically (Ga,Mn)As, has been an issue of long debate. Two confronting models have been discussed emphasizing host band vs.…

We present the results of extended theoretical LDA+DMFT calculations for a new iron-pnictide high temperature superconductor NaFeAs compared with the recent high quality angle-resolved photoemission (ARPES) experiments on this system [1].…

We propose an efficient reduced-order technique for electronic structure calculations of semiconductor nanostructures, suited for inclusion in full-band quantum transport simulators. The model is based on the linear combination of bulk…

The unusual electronic and optical properties of armchair and zigzag graphene nanoribbons (GNRs) subject to in-plane transverse electric and perpendicular magnetic fields have been systematically investigated. Our calculations were carried…

Straight, axial InAs nanowire with multiple segments of GaInAs were grown. High resolution X-ray energy-dispersive spectroscopy (EDS) mapping reveal the distribution of group III atoms at the axial interfaces and at the sidewalls.…

Formation of twin boundaries during the growth of semiconductor nanowires is very common. However, the effects of such planar defects on the electronic and optical properties of nanowires are not very well understood. Here, we use a…

Since the technological breakthrough prompted by the inception of light emitting diodes based on III-nitrides, these material systems have emerged as strategic semiconductors not only for the lighting of the future, but also for the new…

Epitaxial Al/GaAs/Al structures having controlled thickness of high-quality GaAs and pristine interfaces have been fabricated using a wafer-bonding technique. III-V semiconductor/Al structures are grown by molecular beam epitaxy on III-V…

A self-consistent electronic structure calculation based on the Luttinger-Kohn model is performed on GaMnAs/GaAs multilayers. The Diluted Magnetic Semiconductor layers are assumed to be metallic and ferromagnetic. The high Mn concentration…

Electron-phase modulation in magnetic and electric fields will be presented in In_(0.75)Ga_(0.25)As Aharonov-Bohm (AB) rings. The zero Schottky barrier of this material made it possible to nanofabricate devices with radii down to below 200…

Nanophotonic objects like plasmonic nanoparticles and colloidal quantum dots can complement the functionality of molecular dyes in biomedical optics. However, their operation is usually governed by spontaneous processes, which results in…

Junctions composed of two crossed graphene nanoribbons (GNRs) have been theoretically proposed as electron beam splitters where incoming electron waves in one GNR can be split coherently into propagating waves in \emph{two} outgoing…