中文
相关论文

相关论文: Small-signal amplifier based on single-layer MoS2

200 篇论文

We present a physics-based compact model for two-dimensional (2D) field-effect transistors (FETs) based on monolayer semiconductors such as MoS2. A semi-classical transport approach is appropriate for the 2D channel, enabling simplified…

介观与纳米尺度物理 · 物理学 2019-08-14 Saurabh V. Suryavanshi , Eric Pop

Establishing ohmic contact to van der Waals semiconductors such as MoS2 is crucial to unlocking their full potential in next-generation electronic devices. Encapsulation of few layer MoS2 with hBN preserves the material's electronic…

介观与纳米尺度物理 · 物理学 2021-04-12 A. Seredinski , E. G. Arnault , V. Z. Costa , L. Zhao , T. F. Q. Larson , K. Watanabe , T. Taniguchi , F. Amet , A. K. M. Newaz , G. Finkelstein

We realize and investigate ionic liquid gated field-effect transistors (FETs) on large-area MoS2 monolayers grown by chemical vapor deposition (CVD). Under electron accumulation, the performance of these devices is comparable to that of…

介观与纳米尺度物理 · 物理学 2016-02-05 Evgeniy Ponomarev , Ignacio Gutiérrez-Lezama , Nicolas Ubrig , Alberto F. Morpurgo

In light of the rise of transition metal dichalcogenides as 2D semiconductors for device applications, band engineering becomes very important from an application point of view. In many of these materials, such as the canonical example of…

材料科学 · 物理学 2026-05-14 Maciej Bazarnik , Thorsten Deilmann , Marta Przychodnia , Anika Schlenhoff

Two-dimensional materials (2DMs) are a promising alternative to complement and upgrade high-frequency electronics. However, in order to boost their adoption, the availability of numerical tools and physically-based models able to support…

Atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs), such as MoS$_2$, are promising candidates for nanoscale photonics because of strong-light matter interactions. However, Fermi level pinning due to metal-induced…

介观与纳米尺度物理 · 物理学 2023-03-07 Hon-Loen Sinn , Aravindh Kumar , Eric Pop , Akm Newaz

Two-dimensional (2D) semiconductors have been suggested both for ultimately-scaled field-effect transistors (FETs) and More-than-Moore nanoelectronics. However, these targets can not be reached without accompanying gate insulators which are…

Inherent low frequency noise is a ubiquitous phenomenon, which limits operation and performance of electronic devices and circuits. This limiting factor is very important for nanoscale electronic devices, such as 2D semiconductor devices.…

介观与纳米尺度物理 · 物理学 2013-10-25 Yuji Wang , Xinhang Luo , Ningjiao Zhang , Masihhur R. Laskar , Lu Ma , Yiying Wu , Siddharth Rajan , Wu Lu

Amplifiers are ubiquitous in electronics and play a fundamental role in a wide range of scientific measurements. From a user's perspective, an ideal amplifier has very low noise, operates over a broad frequency range, and has a high dynamic…

超导电性 · 物理学 2012-01-12 Byeong Ho Eom , Peter K. Day , Henry G. Leduc , Jonas Zmuidzinas

We present microfabricated thermal actuators to engineer the biaxial strain in two-dimensional (2D) materials. These actuators are based on microheater circuits patterned onto the surface of a polymer with a high thermal expansion…

Future high-energy physics experiments using SiPMs as photosensitive elements may require operation at low temperatures (down to 80 K) to measure single photons with high time resolution in a highly radioactive environment. This calls for a…

仪器与探测器 · 物理学 2026-02-02 P. Carniti , C. Gotti , G. Pessina , D. Trotta

In ReS$_2$ a layer-independent direct band-gap of 1.5 eV implies a potential for its use in optoelectronic applications. ReS$_2$ crystallizes in the 1T$^{\prime}$-structure which leads to anisotropic physical properties and whose…

Two-dimensional (2D) semiconductors are promising candidates for scaled transistors because they are immune to mobility degradation at the monolayer limit. However, sub-10 nm scaling of 2D semiconductors, such as MoS2, is limited by the…

材料科学 · 物理学 2022-02-22 Aravindh Kumar , Alvin Tang , H. -S. Philip Wong , Krishna Saraswat

Atomically thin two dimensional (2D) layered materials have emerged as a new class of material for nanoelectromechanical systems (NEMS) due to their extraordinary mechanical properties and ultralow mass density. Among them, graphene has…

介观与纳米尺度物理 · 物理学 2015-05-28 C. Samanta , P. R. Yasasvi Gangavarapu , A. K. Naik

Both electron and phonon transport properties of single layer MoS2 (SLMoS2) are studied. Based on first-principles calculations, the electrical conductivity of SLMoS2 is calculated by Boltzmann equations. The thermal conductivity of SLMoS2…

介观与纳米尺度物理 · 物理学 2015-12-07 Zelin Jin , Quanwen Liao , Haisheng Fang , Zhichun Liu , Wei Liu , Zhidong Ding , Tengfei Luo , Nuo Yang

We report on the temperature dependence of in-plane E2g and out of plane A1g Raman modes in high quality few layers MoS2 (FLMS) prepared using a high temperature vapor-phase method. The materials obtained were investigated using…

介观与纳米尺度物理 · 物理学 2013-05-15 Satyaprakash Sahoo , Anand P. S. Gaur , Majid Ahmadi , Maxime J-F Guinel , Ram S. Katiyar

Copper nanowires are widely used as on-chip interconnects due to superior conductivity. However, with aggressive Cu interconnect scaling, the diffusive surface scattering of electrons drastically increases the electrical resistivity. In…

We demonstrate that the electrical property of a single layer molybdenum disulfide (MoS2) can be significantly tuned from semiconducting to insulating regime via controlled exposure to oxygen plasma. The mobility, on-current and resistance…

A quantum-limited amplifier enables the amplification of weak signals while introducing minimal noise dictated by the principles of quantum mechanics. These amplifiers serve a broad spectrum of applications in quantum computing, including…

量子物理 · 物理学 2024-06-26 Abdul Mohamed , Elham Zohari , Jarryd J. Pla , Paul E. Barclay , Shabir Barzanjeh

Monolayer molybdenum disulphide (MoS2) is a promising two-dimensional direct-bandgap semiconductor with potential applications in atomically thin and flexible electronics. An attractive insulating substrate or mate for MoS2 (and related…