We present a physics-based compact model for two-dimensional (2D) field-effect transistors (FETs) based on monolayer semiconductors such as MoS2. A semi-classical transport approach is appropriate for the 2D channel, enabling simplified analytical expressions for the drain current. In addition to intrinsic FET behavior, the model includes contact resistance, traps and impurities, quantum capacitance, fringing fields, high-field velocity saturation and self-heating, the latter being found to play a strong role. The model is calibrated with state-of-the-art experimental data for n- and p-type 2D-FETs, and it can be used to analyze device properties for sub-100 nm gate lengths. Using the experimental fit, we demonstrate feasibility of circuit simulations using properly scaled devices. The complete model is implemented in SPICE-compatible Verilog-A, and a downloadable version is freely available on the nanoHUB.org.
@article{arxiv.1610.08489,
title = {S2DS: Physics-Based Compact Model for Circuit Simulation of Two-Dimensional Semiconductor Devices Including Non-Idealities},
author = {Saurabh V. Suryavanshi and Eric Pop},
journal= {arXiv preprint arXiv:1610.08489},
year = {2019}
}