相关论文: Why is the bulk resistivity of topological insulat…

In the recent paper we explained why the maximum bulk resistivity of topological insulators (TIs)is so small [B. Skinner, T. Chen, and B. I. Shklovskii, Phys. Rev. Lett. 109, 176801 (2012)]. Using the model of completely compensated…

Topological insulators are transformative quantum solids with immune-to-disorder metallic surface states having Dirac band structure. Ubiquitous charged bulk defects, however, pull the Fermi energy into the bulk bands, denying access to…

We report a detailed study on low-frequency 1/f-noise in large-area molecular-beam epitaxy grown thin (10 nm) films of topological insulators as a function of temperature, gate voltage, and magnetic field. When the Fermi energy is within…

In an ideal 3D topological insulator (TI), the bulk is insulating and the surface conducting due to the existence of metallic states that are localized on the surface; these are the topological surface states. Quaternary Bi-based compounds…

We reanalyze some of the critical transport experiments and provide a coherent understanding of the current generation of topological insulators (TIs). Currently TI transport studies abound with widely varying claims of the surface and bulk…

Topological insulators (TIs) are newly discovered states of matter with robust metallic surface states protected by the topological properties of the bulk wavefunctions. A quantum phase transition (QPT) from a TI to a conventional insulator…

In the three-dimensional topological insulator (TI), the physics of doped semiconductors exists literally side-by-side with the physics of ultra-relativistic Dirac fermions. This unusual pairing creates a novel playground for studying the…

We used the inverted resistance method to extend the bulk resistivity of SmB$_{6}$ to a regime where the surface conduction overwhelms the bulk. Remarkably, the bulk resistivity shows an intrinsic thermally activated behavior that changes…

The non-trivialness of a topological insulator (TI) is characterized either by a bulk topological invariant or by the existence of a protected metallic surface state. Yet, in realistic samples of finite size this non-trivialness does not…

Three-dimensional topological insulator (TI) nanowires with quantized surface subband spectra are studied as a main component of Majorana bound states (MBS) devices. However, such wires are known to have large concentration $N \sim 10^{19}$…

Resistivities of heavy-fermion insulators typically saturate below a characteristic temperature $T^*$. For some, metallic surface states, potentially from a non-trivial bulk topology, are a likely source of residual conduction. Here, we…

Topological insulators are emerging materials with insulating bulk and symmetry protected nontrivial surface states. One of the most fascinating transport behaviors in a topological insulator is the quantized anomalous Hall insulator, which…

We report a transport study of exfoliated few monolayer crystals of topological insulator Bi$_2$Se$_3$ in an electric field effect (EFE) geometry. By doping the bulk crystals with Ca, we are able to fabricate devices with sufficiently low…

Topological insulators (TIs) are a class of materials which are insulating in their bulk form yet, upon introduction of an a boundary or edge, e.g. by abruptly terminating the material, may exhibit spontaneous current along their boundary.…

Weak antilocalization (WAL) and linear magnetoresistance (LMR) are two most commonly observed magnetoresistance (MR) phenomena in topological insulators (TIs) and often attributed to the Dirac topological surface states (TSS). However,…

Topological insulator (TI) is an exciting discovery because of its robustness against disorder and interactions. Recently, higher-order TIs have been attracting increasing attention, because they host 1D topologically-protected hinge states…

Topological insulators (TIs) are predicted to be composed of an insulating bulk state along with conducting channels on the boundary of the material. In Bi2Se3, however, the Fermi level naturally resides in the conduction band due to…

The search for large band gap systems with dissipationless edge states is essential to developing materials that function under a wide range of temperatures. Two-dimensional (2D) topological insulators (TIs) have recently attracted…

Topological insulators (TIs) and topological crystalline insulators (TCIs) are materials with unconventional electronic properties, making their discovery highly valuable for practical applications. However, such materials, particularly…

We generalize the topological response theory of three-dimensional topological insulators (TI) to metallic systems-specifically, doped TI with finite bulk carrier density and a time-reversal symmetry breaking field near the surface. We show…