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Doping Bi$_2$Se$_3$ by magnetic ions represents an interesting problem since it may break the time reversal symmetry needed to maintain the topological insulator character. Mn dopants in Bi$_2$Se$_3$ represent one of the most studied…

材料科学 · 物理学 2020-02-26 K. Carva , P. Baláž , J. Šebesta , I. Turek , J. Kudrnovský , F. Máca , V. Drchal , J. Chico , V. Sechovský , J. Honolka

We studied the defects of Bi2Se3 generated from Bridgman growth of stoichiometric and nonstoichiometric self-fluxes. Growth habit, lattice size, and transport properties are strongly affected by the types of defect generated. Major defect…

材料科学 · 物理学 2015-06-11 F. -T. Huang , M. -W. Chu , H. H. Kung , W. L. Lee , R. Sankar , S. -C. Liou , K. K. Wu , Y. K. Kuo , F. C. Chou

Cu$_3$SbSe$_4$ is a promising thermoelectric material due to high thermopower ($>400\ \mu$V/K) at 300K and higher. Although it has a simple crystal structure derived from zinc blende structure, previous work has shown that the physics of…

材料科学 · 物理学 2014-09-17 Dat T. Do , S. D. Manhanti

Using density functional theory, we calculated the formation energy of native point defects (vacancies, interstitials and antisites) in MAX phase $Ti_2GeC$ and $Ti_3GeC_2$ compounds. Ge vacancy with formation energy of 2.87 eV was the most…

材料科学 · 物理学 2019-04-09 M. H. N. Assadi , H. Katayama-Yoshida

In$_2$Se$_3$ is a semiconductor material that can be stabilized in different crystal structures (at least one 3D and several 2D layered structures have been reported) with diverse electrical and optical properties. This feature has plagued…

We present a first-principles computational study of cation-Se $\Sigma$3 (112) grain boundaries in CuGaSe$_2$. We discuss the structure of these grain boundaries, as well as the effect of native defects and Na impurities on their electronic…

材料科学 · 物理学 2021-03-22 R. Saniz , J. bekaert , B. Partoens , D. Lamoen

Bi$_2$Se$_3$ is one of the most promising topological insulators, but it suffers from intrinsic n-doping due to Se-vacancies, which shifts the Fermi level into the bulk conduction band, leading to topologically trivial carriers. Recently it…

材料科学 · 物理学 2023-10-25 Cheng Fan , Kazuyuki Sakamoto , Peter Krüger

Doping properties of Bi, Cr and Ag dopants in thermoelectric and topological materials PbTe and SnTe are analyzed based on density functional theory calculations in the local density approximations and the large supercell method. In…

材料科学 · 物理学 2025-06-12 A. Łusakowski , P. Bogusławski , T. Story

The growth and elementary properties of p-type Bi2Se3 single crystals are reported. Based on a hypothesis about the defect chemistry of Bi2Se3, the p-type behavior has been induced through low level substitutions (1 percent or less) of Ca…

We have performed a first-principles study of the p- and n-type conductivity in CuIn$_{1-x}$Ga$_x$Se$_{2}$ due to native point defects, based on the HSE06 hybrid functional. Band alignment shows that the band gap becomes larger with $x$ due…

介观与纳米尺度物理 · 物理学 2015-06-22 Jonas Bekaert , Rolando Saniz , Bart Partoens , Dirk Lamoen

Possible emergence of nematic superconductivity that breaks its underlying lattice symmetry in doped topological insulator Bi$_2$Se$_3$,establishes this system as a unique candidate of topological superconductors. Exclusion of possible…

超导电性 · 物理学 2021-10-28 Xinrun Mi , Yecheng Jing , Kunya Yang , Yuhan Gan , Aifeng Wang , Yisheng Chai , Mingquan He

Sr$_x$Bi$_2$Se$_3$ and the related compounds Cu$_x$Bi$_2$Se$_3$ and Nb$_x$Bi$_2$Se$_3$ have attracted considerable interest, as these materials may be realizations of unconventional topological superconductors. Superconductivity with T$_c$…

The presence of a point defect typically breaks the stoichiometry in a semiconductor. For example, a vacancy on an A-site in an AB compound makes the crystal B-rich. As the stoichiometry changes, so do the chemical potentials. While the…

材料科学 · 物理学 2021-02-22 Yaxian Wang , Wolfgang Windl

The semiconducting behaviour and optoelectronic response of gallium nitride is governed by point defect processes, which, despite many years of research, remain poorly understood. The key difficulty in the description of the dominant…

Density functional theory paired with a first order many-body perturbation theory correction is applied to determine formation energies and charge transition energies for point defects in bulk In_0.53Ga_0.47As and for models of the…

介观与纳米尺度物理 · 物理学 2017-03-08 Gabriel Greene-Diniz , Kelin J. Kuhn , Paul K. Hurley , James C. Greer

The discovery of topological superconductivity in doped Bi$_2$Se$_3$ made this class of materials highly important for the field of condensed matter physics. However, the structural origin of the superconducting state remained elusive,…

A nematic topological superconductor has an order parameter symmetry, which spontaneously breaks the crystalline symmetry in its superconducting state. This state can be observed, for example, by thermodynamic or upper critical field…

Recently an air-stable layered semiconductor Bi2O2Se was discovered to exhibit an ultrahigh mobility in transistors fabricated with its thin layers. In this work, we explored the mechanism that induces the high mobility and distinguishes…

介观与纳米尺度物理 · 物理学 2018-07-04 Huixia Fu , Jinxiong Wu , Hailin Peng , Binghai Yan

The formation energies and transition energy levels of native defects in hexagonal BN have been studied by first-principles calculations based on hybrid density functional theory (DFT) together with an empirical dispersion correction of…

材料科学 · 物理学 2015-06-15 V. Wang , R. J. Liu , H. P. He , C. M. Yang , L. Ma

We report first-principles calculations that clarify the formation energies and charge transition levels of native point defects (Ga and O vacancies, interstitials, and a Ga vacancy-O vacancy pair) in corundum structured ${\alpha}$-Ga2O3.…

材料科学 · 物理学 2019-08-13 Takuma Kobayashi , Tomoya Gake , Yu Kumagai , Fumiyasu Oba , Yu-ichiro Matsushita