相关论文: A full free spectral range tuning of p-i-n doped G…
Controlled tuning of the whispering gallery modes of GaN/InGaN {\mu}-disk cavities is demonstrated. The whispering gallery mode (WGM) tuning is achieved at room temperature by immersing the {\mu}-disks in water and irradiating with…
InGaN-based active layers within microcavity resonators offer the potential of low threshold lasers in the blue spectral range. Here we demonstrate optically pumped, room temperature lasing in high quality factor GaN microdisk cavities…
Low threshold lasers realized within compact, high quality optical cavities enable a variety of nanophotonics applications. Gallium nitride (GaN) materials containing indium gallium nitride (InGaN) quantum dots and quantum wells offer an…
Erbium-doped lithium niobate on insulator (LNOI) laser plays an important role in the complete photonic integrated circuits (PICs). Here, we demonstrate an integrated tunable whisper galley single mode laser (WGSML) by making use of a pair…
We demonstrate fast (up to 20 GHz), low power (5 $\mu W$) modulation of photonic crystal (PC) cavities in GaAs containing InAs quantum dots. Rapid modulation through blue-shifting of the cavity resonance is achieved via free carrier…
Erbium-doped lithium niobate high-Q microdisk cavities were fabricated in batches by UV exposure, inductively coupled plasma reactive ion etching and chemo-mechanical polishing. The stimulated emission at 1531.6 nm was observed under the…
We report on room temperature phonon-assisted whispering gallery mode (WGM) lasing in ZnO microwires. For WGM laser action on the basis of the low gain phonon scattering process high quality resonators with sharp corners and smooth facets…
The tunability of an optical cavity is an essential requirement for many areas of research. Here, we use the Pound-Drever-Hall technique to lock a laser to a whispering gallery mode (WGM) of a microbubble resonator, to show that linear…
In the last decade, remarkable advances in integrated photonic technologies have enabled table-top experiments and instrumentation to be scaled down to compact chips with significant reduction in size, weight, power consumption, and cost.…
We show over 100-fold enhancement of the exciton oscillator strength as the diameter of an InGaN nanodisk in a GaN nanopillar is reduced from a few micrometers to less than 40 nm, corresponding to the quantum dot limit. The enhancement…
Ultraviolet microdisk lasers are integrated monolithically into photonic circuits using a III-nitride on silicon platform with gallium nitride (GaN) as the main waveguiding layer. The photonic circuits consist of a microdisk and a pulley…
An erbium doped micro-laser is demonstrated utilizing $\mathrm{SiO_{2}}$ microdisk resonators on a silicon chip. Passive microdisk resonators exhibit whispering gallery type (WGM) modes with intrinsic optical quality factors of up to…
Whispering gallery resonators (WGR's), based on total internal reflection, possess high quality factors in a broad spectral range. Thus, nonlinear optical processes in such cavities are ideally suited for the generation of broadband or…
Transition metal dichalcogenides (TMDCs) have emerged as highly promising materials for nanophotonics and optoelectronics due to their exceptionally high refractive indices, strong excitonic photoluminescence (PL) in monolayer…
The threshold current density of narrow (1.5 {\mu}m) ridge-waveguide InGaN multi-quantum-well laser diodes, as well as the shape of their lateral far-field patterns, strongly depend on the etch depth of the ridge waveguide. Both effects can…
The design of a 671 nm diode laser with a mode-hop-free tuning range of 40 GHz is described. This long tuning range is achieved by simultaneously ramping the external cavity length with the laser injection current. The external cavity…
We are the first to report the frequency response and corresponding current density of a wurtzite phase Indium Nitride (InN)-based vertical configuration Gunn diode at 1 \mu m active length. Domain growths dynamics with respect to space and…
Extending the cavity length of diode lasers with feedback from Bragg structures and ring resonators is highly effective for obtaining ultra-narrow laser linewidths. However, cavity length extension also decreases the free-spectral range of…
We present hybrid-integrated extended cavity diode lasers tunable around 637 nm, with a gain-wide spectral coverage of 8 nm. This tuning range allows addressing the zero-phonon line of nitrogen vacancy centers and includes the wavelength of…
Tunable light sources are a key enabling technology for many applications such as ranging, spectroscopy, optical coherence tomography, digital imaging and interferometry. For miniaturized laser devices, whispering gallery resonator lasers…