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相关论文: Competing Ordered States in Bilayer Graphene

200 篇论文

We study possible patterns for spontaneous symmetry breaking in a Dirac fermion model, which is applicable to twisted bilayer graphene at charge neutrality. We show how a chiral SU(4) symmetry emerges and construct the corresponding…

强关联电子 · 物理学 2023-12-21 Nikolaos Parthenios , Laura Classen

The ground state of bilayer graphene is investigated by the density functional calculations with local spin density approximation. We find a ground state with layer antiferromagnetic ordering, which has been suggested by former studies…

介观与纳米尺度物理 · 物理学 2013-05-15 Yong Wang , Hao Wang , Jin-Hua Gao , Fu-Chun Zhang

We study the impurity states in bilayer graphene in the unitary limit using Green's function method. Unlike in single layer graphene, the presence of impurities at two non-equivalent sites in bilayer graphene produce different impurity…

强关联电子 · 物理学 2009-11-13 Hari P. Dahal , A. V. Balatsky , Jian-Xin Zhu

The ground-state phase diagram of the frustrated spin-S XXZ chain with the competing nearest- and next-nearest-neighbor antiferromagnetic couplings is studied numerically by using the density-matrix renormalization-group method for the…

统计力学 · 物理学 2009-10-31 T. Hikihara , M. Kaburagi , H. Kawamura

Charge carriers in bilayer graphene occupy two parabolic continua of electron-like and hole-like states which differ by the alignment between carrier pseudospin and its momentum, the property known as chirality. Due to chirality…

介观与纳米尺度物理 · 物理学 2015-06-10 A. V. Shytov

In mean-field-theory bilayer graphene's massive Dirac fermion model has a family of broken inversion symmetry ground states with charge gaps and flavor dependent spontaneous inter layer charge transfers. We use a lattice Hartree-Fock model…

介观与纳米尺度物理 · 物理学 2011-04-22 Jeil Jung , Fan Zhang , Allan H. MacDonald

We present the electronic band structures of states with the same symmetry as the three-sublattice planar antiferromagnetic order of the triangular lattice. Such states can also be defined on the honeycomb lattice provided the spin density…

强关联电子 · 物理学 2018-08-15 Alex Thomson , Shubhayu Chatterjee , Subir Sachdev , Mathias S. Scheurer

We investigate twisted bilayer graphene near charge neutrality using a generalized Bistritzer-MacDonald continuum model, accounting for corrugation effects. The Fermi velocity vanishes for particular twist angles properly reproducing the…

强关联电子 · 物理学 2022-09-07 Eric Brillaux , David Carpentier , Andrei A. Fedorenko , Lucile Savary

We analyze the phase diagram of the zeroth Landau level of bilayer graphene, taking into account the realistic effects of screening of the Coulomb interaction and the strong mixing between two degenerate sublevels. We identify robust…

介观与纳米尺度物理 · 物理学 2014-02-05 Z. Papić , D. A. Abanin

We theoretically demonstrate the formation of a new type of unconventional superconductivity in graphene materials, which exhibits gapless property. The studied superconductivity is based on an interlayer pairing of chiral electrons in…

介观与纳米尺度物理 · 物理学 2015-06-04 Mir Vahid Hosseini , Malek Zareyan

Bilayer quantum Hall systems, realized either in two separated wells or in the lowest two sub-bands of a wide quantum well, provide an experimentally realizable way to tune between competing quantum orders at the same filling fraction.…

强关联电子 · 物理学 2015-06-03 Scott Geraedts , Michael P. Zaletel , Zlatko Papić , Roger S. K. Mong

The ground-state phase diagram of frustrated S=1 XXZ spin chains with the competing nearest- and next-nearest-neighbor antiferromagnetic couplings is studied using the infinite-system density-matrix renormalization-group method. We find six…

统计力学 · 物理学 2009-10-31 T. Hikihara , M. Kaburagi , H. Kawamura , T. Tonegawa

The origin of the low current on/off ratio at room temperature in dual-gated bilayer graphene field-effect transistors is considered to be the variable range hopping in gap states. However, the quantitative estimation of gap states has not…

材料科学 · 物理学 2015-11-18 Kaoru Kanayama , Kosuke Nagashio

Bilayer graphene in a magnetic field hosts a variety of ordered phases built from eight Landau levels close in energy to the neutrality point. These levels are characterized by orbital $n=0,1$, valley $\xi=+,-$ and spin…

介观与纳米尺度物理 · 物理学 2020-05-25 Brett R. Green , Jorge O. Sofo

The instanton approach to the in-gap fluctuation states is applied to the spectrum of biased bilayer graphene. It is shown that the density of states falls off with energy measured from the band-edge as $\nu(\epsilon)\propto…

介观与纳米尺度物理 · 物理学 2009-11-13 V. V. Mkhitaryan , M. E. Raikh

Monolayer graphene placed with a twist on top of AB-stacked bilayer graphene hosts topological flat bands in a wide range of twist angles. The dispersion of these bands and gaps between them can be efficiently controlled by a perpendicular…

强关联电子 · 物理学 2020-08-05 Louk Rademaker , Ivan Protopopov , Dmitry Abanin

We map out the possible ordered states in bilayer graphene at the neutrality point by extending the previous renormalization group treatment of many-body instabilities to finite temperature, trigonal warping and externally applied…

强关联电子 · 物理学 2012-09-04 Vladimir Cvetkovic , Robert E. Throckmorton , Oskar Vafek

We analyze density-wave and Pomeranchuk orders in twisted bilayer graphene. This compliments our earlier analysis of the pairing instabilities. We assume that near half-filling of either conduction or valence band, the Fermi level is close…

强关联电子 · 物理学 2020-09-18 Dmitry V. Chichinadze , Laura Classen , Andrey V. Chubukov

We construct a variational description for incompressible ground states and charge gaps in the N = 0 LL of graphene which accounts for the 4-fold Landau level degeneracy and for the short range interactions that break the SU(4) spin-valley…

强关联电子 · 物理学 2014-04-01 Inti Sodemann , Allan H. MacDonald

Based on the four-band continuum model, we study the ordered-current state (OCS) for electrons in bilayer graphene at the charge neutrality point. The present work resolves the puzzles that (a) the energy gap increases significantly with…

强关联电子 · 物理学 2013-07-10 Xin-Zhong Yan , C. S. Ting