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Resistive switching can be achieved in a Mott insulator by applying current/voltage, which triggers an insulator-metal transition (IMT). This phenomenon is key for understanding IMT physics and developing novel memory elements and…

Variations in the band structures of C60-polymers are studied, when pi-conjugation conditions are changed. We look at band structures in order to discuss a metal-insulator transition, using a semi-empirical model with the…

chem-ph · 物理学 2008-02-03 Kikuo Harigaya

A large scale dynamical simulation of the superfluid to Mott insulator transition in the gas of ultra cold atoms placed in an optical lattice is performed using the time dependent Gutzwiller mean field approach. This approximate treatment…

其他凝聚态物理 · 物理学 2009-11-10 Jakub Zakrzewski

We study metal-insulator transitions between Mott insulators and metals. The transition mechanism completely different from the original dynamical mean field theory (DMFT) emerges from a cluster extension of it. A consistent picture…

强关联电子 · 物理学 2007-07-18 Y. Z. Zhang , Masatoshi Imada

The correlation-driven metal-insulator (Mott) transition at a solid surface is studied within the Hubbard model for a semi-infinite lattice by means of the dynamical mean-field theory. The transition takes place at a unique critical…

强关联电子 · 物理学 2009-10-31 M. Potthoff , W. Nolting

Metal-insulator transitions involve a mix of charge, spin, and structural degrees of freedom, and when strongly-correlated, can underlay the emergence of exotic quantum states. Mott insulators induced by the opening of a Coulomb gap are an…

强关联电子 · 物理学 2021-05-14 Yejun Feng , Yishu Wang , D. M. Silevitch , S. E. Cooper , D. Mandrus , Patrick A. Lee , T. F. Rosenbaum

Various types of metal-insulator transitions are discussed to find conditions for which an ideal surface of a bulk insulator is metallic. It is argued that for the correlation-driven Mott metal-insulator transition the surface phase diagram…

强关联电子 · 物理学 2007-05-23 M. Potthoff

A brief review of metal-insulator transitions in three-dimensional doped semiconductors, with emphasis on the "critical exponent puzzle"; and new experimental findings that signal the possibility of an unexpected metal-insulator transition…

强关联电子 · 物理学 2009-09-25 Myriam P. Sarachik

Sustaining exotic quantum mechanical phases at high temperatures is a long-standing goal of condensed matter physics. Among them, half-metals are spin-polarized conductors that are essential for realizing room-temperature spin current…

强关联电子 · 物理学 2022-03-22 Gour Jana , Abhishek Joshi , Subhajyoti Pal , Anamitra Mukherjee

We have investigated the structural, electronic and magnetic properties of the Mott-insulator Ca2RuO4 under the application of a static external electric field in two regimes: bulk systems at small fields and thin films at large electric…

强关联电子 · 物理学 2023-02-14 Giuseppe Cuono , Carmine Autieri

The elucidation of nonequilibrium states in strongly correlated systems holds the key to emergence of novel quantum phases. The nonequilibrium-induced insulator-to-metal transition is particularly interesting since it reflects the…

强关联电子 · 物理学 2022-08-05 Kazuya Shinjo , Shigetoshi Sota , Takami Tohyama

This article reviews recent results of magnetotransport and magnetization measurements performed on highly oriented pyrolitic graphite (HOPG) and single crystalline Kish graphite samples. Both metal-insulator and insulator-metal transitions…

强关联电子 · 物理学 2007-05-23 Y. Kopelevich , P. Esquinazi , J. H. S. Torres , R. R. da Silva , H. Kempa , F. Mrowka , R. Ocana

An abrupt first-order metal-insulator transition (MIT) without structural phase transition is first observed by current-voltage measurements and micro-Raman scattering experiments, when a DC electric field is applied to a Mott insulator…

强关联电子 · 物理学 2015-06-24 Yong-Sik Lim , Hyun-Tak Kim , B. G. Chae , D. H. Youn , K. O. Kim , K. Y. Kang , S. J. Lee , K. Kim

The ultrafast photoinduced insulator-metal transition in VO2 is studied at different temperatures and excitation fluences using multi-THz probe pulses. The spectrally resolved mid-infrared response allows us to trace separately the dynamics…

强关联电子 · 物理学 2015-03-19 A. Pashkin , C. Kübler , H. Ehrke , R. Lopez , A. Halabica , R. F. Haglund, , R. Huber , A. Leitenstorfer

Current-induced magnetization switching through spin-orbit torques (SOTs) is the fundamental building block of spin-orbitronics. The SOTs generally arise from the spin-orbit coupling of heavy metals. However, even in a heterostructure where…

材料科学 · 物理学 2017-09-22 Hongyu An , Takeo Ohno , Yusuke Kanno , Yuito Kageyama , Yasuaki Monnai , Hideyuki Maki , Ji Shi , Kazuya Ando

In this study, we investigate the metal-insulator transition of charge transfer type in high-temperature cuprates. We first show that we must introduce a new band parameter in the three-band d-p model to reproduce the Fermi surface of high…

强关联电子 · 物理学 2014-08-05 Takashi Yanagisawa , Mitake Miyazaki

We theoretically discover purely electronic polarization modes in THz frequency region in dimer Mott insulators $\kappa$-(BEDT-TTF)$_2$X. The unusual low-frequency modes arise from the coupling between the oscillation of intradimer electric…

强关联电子 · 物理学 2015-05-18 Hiroki Gomi , Takayuki Imai , Akira Takahashi , Masaki Aihara

We address a recent experiment in which a strong decrease of the resistance of a superconducting film has been observed when a remote unbiased gate was placed above the film. Here we explain the experimental finding as a suppression of the…

超导电性 · 物理学 2009-11-11 K. Michaeli , A. M. Finkel'stein

Crystal structures of $\textrm{CLi}_4$ compounds are explored through \emph{ab} \emph{initio} evolutionary methodology. Phase transition from metal to semimetal and semiconductor, and eventually to insulator with increasing pressure are…

材料科学 · 物理学 2016-04-27 Xilian Jin , Xiao-Jia Chen , Huadi Zhang , Quan Zhuang , Kuo Bao , Dawei Zhou , Qiang Zhou , Zhi He , Bingbing Liu , Tian Cui

To verify whether the Mott insulator Ca2RuO4 can be switched by applying electric-field alone, regardless of current flow, we employ metallisation using electric double-layer gating (EDLG). The resistance change due to EDLG occurs only when…

强关联电子 · 物理学 2025-01-08 Tatsuhiro Sakami , Hiroki Ogura , Akihiro Ino , Takumi Ouchi , Tsutomu Nojima , Fumihiko Nakamura