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One of the major puzzles in condensed matter physics has been the observation of a Mott-insulating state away from half-filling. The filling-controlled Mott insulator-metal transition, induced via charge-carrier doping, has been extensively…

强关联电子 · 物理学 2021-07-13 S. Hameed , J. Joe , D. M. Gautreau , J. W. Freeland , T. Birol , M. Greven

We observe an insulator-to-metal (I-M) transition in crystalline silicon doped with sulfur to non- equilibrium concentrations using ion implantation followed by pulsed laser melting and rapid resolidification. This I-M transition is due to…

材料科学 · 物理学 2015-05-27 Mark T. Winkler , Daniel Recht , Meng-Ju Sher , Aurore J. Said , Eric Mazur , Michael J. Aziz

The organic conductor $\alpha$-(BEDT-TTF)$_2$I$_3$ provides the prime example of a charge-order-driven metal-insulator transition. Restricted chemical substitution of S atoms by Se in the constituent molecules allows us to modify the…

We demonstrate that the transition from a superfluid to a Mott insulator in the Bose-Hubbard model can be induced by an oscillating force through an effective renormalization of the tunneling matrix element. The mechanism involves adiabatic…

其他凝聚态物理 · 物理学 2007-05-23 Andre Eckardt , Christoph Weiss , Martin Holthaus

FeSe has been extensively explored as a quantum material, primarily due to the observed highest superconducting transition temperature among Fe-based unconventional superconductors. Nonetheless, the electronic structure and the electron…

强关联电子 · 物理学 2023-10-31 Byungkyun Kang , Maengsuk Kim , Chul Hong Park , Anderson Janotti

We discuss a metal-insulator transition caused by random couplings of magnetic moments in itinerant systems. An analytic solution for the single particle Green function is derived from dynamical self consistency equations, the corresponding…

强关联电子 · 物理学 2007-05-23 B. Rosenow , R. Oppermann

An abrupt Mott metal-insulator transition (MIT) rather than the continuous Hubbard MIT near a critical on-site Coulomb energy U/U_c=1 is observed for the first time in VO_2, a strongly correlated material, by inducing holes of about 0.018%…

强关联电子 · 物理学 2009-11-10 Hyun-Tak Kim , B. G. Chae , D. H. Youn , S. L. Maeng , K. Y. Kang

Pump-probe experiments with femtosecond time resolution allow to disentangle the electronic dynamics from the lattice response and thus provide valuable insights into the non-equilibrium behavior of correlated materials. In Cr-doped…

强关联电子 · 物理学 2024-07-15 Jiyu Chen , Francesco Petocchi , Viktor Christiansson , Philipp Werner

Employing extensive cellular dynamical mean-field theory (CDMFT) calculations with exact diagonalization impurity solver, we investigate the ground state phase diagrams and non-magnetic metal-insulator transitions of the half-filled Hubbard…

强关联电子 · 物理学 2015-03-20 Han-Qing Wu , Rong-Qiang He , Zi Yang Meng , Zhong-Yi Lu

We present a combined experimental and theoretical study of the electronic structure of the intermetallic compound TiGePt by means of photoelectron spectroscopy, x-ray absorption spectroscopy and fullpotential band structure calculations.…

Here we demonstrate that water-infiltrated nanoporous glass electrically switches an oxide semiconductor from an insulator to metal. We fabricated the field effect transistor structure on an oxide semiconductor, SrTiO3, using…

The in-plane magnetoconductance of the strongly interacting two-dimensional electron system in a silicon MOSFET (metal-oxide-semiconductor-field-effect transistor) exhibits an unmistakeable kink at a well-defined electron density, $n_k$.…

强关联电子 · 物理学 2019-04-12 Shiqi Li , Qing Zhang , Pouyan Ghaemi , M. P. Sarachik

A metal-insulator transition was induced by in-plane magnetic fields up to 27 T in homogeneously Sb-doped Si/SiGe superlattice structures. The localisation is not observed for perpendicular magnetic fields. A comparison with…

介观与纳米尺度物理 · 物理学 2014-01-10 G. Brunthaler , T. Dietl , A. Prinz , M. Sawicki , J. Jaroszynski , P. Glod , F. Schaffler , G. Bauer , D. K. Maude , J. C. Portal

We study (by an exact numerical scheme) the single-particle density matrix of $\sim 10^3$ ultracold atoms in an optical lattice with a parabolic confining potential. Our simulation is directly relevant to the interpretation and further…

凝聚态物理 · 物理学 2009-11-07 V. A. Kashurnikov , N. V. Prokof'ev , B. V. Svistunov

This review first describes the evidence that strongly suggests the existence of the metal-insulator transition (MIT) in a two-dimensional electron system in Si regardless of the amount of disorder. Extensive studies of the charge dynamics…

强关联电子 · 物理学 2011-09-22 Dragana Popović

More than half a century after first being proposed by Sir Nevill Mott, the deceptively simple question of whether the interaction-driven electronic metal-insulator transition may be continuous remains enigmatic. Recent experiments on…

We report here a discovery of electrically driven insulator to metal transition (IMT) and concomitant isostructural volume expansion in the layered cobaltates which otherwise do not exhibit temperature dependent IMT. These findings are…

强关联电子 · 物理学 2019-08-06 Abdul Ahad , R. Rawat , F. Rahman , D. K. Shukla

We apply ultrafast spectroscopy to establish a time-domain hierarchy between structural and electronic effects in a strongly-correlated electron system. We discuss the case of the model system VO2, a prototypical non-magnetic compound that…

强关联电子 · 物理学 2007-05-23 A. Cavalleri , Th. Dekorsy , H. H. Chong , J. C. Kieffer , R. W. Schoenlein

The coupling of electronic degrees of freedom in materials to create hybridized functionalities is a holy grail of modern condensed matter physics that may produce novel mechanisms of control. Correlated electron systems often exhibit…

We use a combination of optical spectra, first principles calculations, and energy dependent magneto-optical measurements to elucidate the electronic structure and to study the phase diagram of Ni$_3$V$_2$O$_8$. We find a remarkable…

强关联电子 · 物理学 2007-05-23 R. C. Rai , J. Cao , S. Brown , J. L. Musfeldt , D. Kasinathan , D. J. Singh , G. Lawes , N. Rogado , R. J. Cava , X. Wei
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