相关论文: GaMnN epitaxial films with high magnetization

In the present study we have demonstrated epitaxial stabilization of the metastable magnetically-hard $\varepsilon$-Fe$_2$O$_3$ phase on top of a thin MgO(111) buffer layer grown onto the GaN (0001) surface. The primary purpose to introduce…

In this work, we report on the epitaxial growth of multiferroic YMnO3 on GaN. Both materials are hexagonal with a nominal lattice mismatch of 4%, yet x-ray diffraction reveals an unexpected 30 degree rotation between the unit cells of YMnO3…

We report on the magneto-optical spectroscopy and cathodoluminescence of a set of wurtzite (Ga,Mn)N epilayers with a low Mn content, grown by molecular beam epitaxy. The sharpness of the absorption lines associated to the Mn$^{3+}$ internal…

Angular-dependent channeling Rutherford Backscattering Spectroscopy (c-RBS) has been used to quantify the fraction of Cr atoms on substitutional, interstitial, and random sites in epitaxial Ga1-xCrxN films grown by reactive molecular-beam…

500-nm-thick $\mathrm{In}_{x}\mathrm{Ga}_{1-x}\mathrm{N}$ layers with $x=$ 0.05-0.14 are grown using plasma-assisted molecular beam epitaxy, and their properties are assessed by a comprehensive analysis involving x-ray diffraction,…

We report recrystallization of epitaxial (epi-) GaN(0001) film under indentation.Hardness value is measured close to 10 GPa, using a Berkovich indenter. Pop-in burst in the loading line indicates nucleation of dislocations setting in…

Undoped and Si-doped GaN films were grown epitaxially on sapphire by reactive rf sputtering of GaAs (and Si) in Ar-N2 mixture. The resistivity of undoped GaN film grown at 100% N2 was ~2 x 105 {\Omega} cm, which reduced to ~1 {\Omega} cm in…

Whether {\alpha}double prime-Fe16N2 possesses a giant saturation magnetization (Ms) has been a daunting problem among magnetic researchers for almost 40 years, mainly due to the unshakable faith of famous Slater-Pauling (SP) curve and poor…

We study the molecular beam epitaxy of rock-salt ScN on the wurtzite GaN($1\bar{1}00$) surface. To this end, ScN is grown on free-standing GaN($1\bar{1}00$) substrates and self-assembled GaN nanowires that exhibit ($1\bar{1}00$) sidewalls.…

In order to analyse the effect of strain on the magnetic properties of narrow-band manganites, the temperature and field dependent susceptibilities of about 8.5 nm thick epitaxial Pr0.7Ca0.3MnO3 films, respectively grown on (001) and (110)…

The structural analysis of GaN and Al$_x$Ga$_{1-x}$N/GaN heterostructures grown by metalorganic vapor phase epitaxy in the presence of Mn reveals how Mn affects the growth process, and in particular the incorporation of Al, the morphology…

This document reports the x-ray powder diffraction main reflections (intensity threshold >= 100) for possible Fe-related phases forming during the metal-organic vapor phase epitaxy (MOVPE) growth of Fe in NH_3/H_2 mixture on…

Thin layers of GaMnAs ferromagnetic semiconductor grown by molecular beam epitaxy on GaAs(001) substrates were studied. To improve their magnetic properties the post-growth annealing procedures were applied, using the surface passivation…

A detailed study of the influence of molecular beam epitaxial growth conditions on the structural and magnetic characteristics of CuMnSb films on lattice matched GaSb is presented. For a set of nine 40~nm thick layers, the Mn and Sb fluxes…

We studied the structural and magnetic properties of \textit{in-situ} grown iron mononitride (FeN) thin films. Initial stages of film growth were trapped utilizing synchrotron based soft x-ray absorption near edge spectroscopy (XANES) at…

Intrinsic catalytic process by capillary condensation of Ga-atoms into nanotrenches, formed among impinging islands during the wurzite-GaN thin film deposition, is shown to be an effective path to growing GaN nanorods without metal…

We report on a combined theoretical and experimental determination of the Fermi level position in wurtzite Ga$_{1-x}$Mn$_{x}$N films with $x=4\%$ and $x=10\%$ as grown by molecular beam epitaxy. By means of ellipsometric measurements the…

The ruthenium content of half-metallic Mn$_2$Ru$_x$Ga thin films, with a biaxially-strained inverse Heusler structure, controls the ferrimagnetism that determines their magnetic and electronic properties. An extensive study of…

The effect of Mg $\delta$-doping on the structural, electrical and optical properties of GaN grown $\textsl{via}$ metalorganic vapor phase epitaxy has been studied using transmission electron microscopy, secondary ion mass spectroscopy,…

We studied the ferroelectric and ferromagnetic properties of compressive strained and unstrained BiMnO3 thin films grown by rf-magnetron sputtering. BiMnO3 samples exhibit a 2D cube-on-cube growth mode and a pseudo-cubic struc-ture up to a…