相关论文: A unique metal-semiconductor interface and resulta…

Transport characteristics of single crystal bismuth films on Si(111)-7 \times 7 are found to be metallic or insulating at temperature below or above TC, respectively. The transition temperature TC decreases as the film thickness increases.…

Elementary semiconductors are rare and attractive, especially for low-dimensional materials. Unfortunately, most of boron nanostructures were found to be metallic, despite of their typical semiconducting bulk structure. Herein, we propose a…

We report a numerical study of the tunnel conductance through the Schottky barrier at the contact between a semiconducting carbon nanotube and a metal electrode. In a planar gate model the asymmetry between the p--doped and the n--doped…

The newly emerging class of atomically-thin materials has shown a high potential for the realisation of novel electronic and optoelectronic components. Amongst this family, semiconducting transition metal dichalcogenides (TMDCs) are of…

We have fabricated single-electron transistors from individual metal nanoparticles using a geometry that provides improved coupling between the particle and the gate electrode. This is accomplished by incorporating a nanoparticle into a gap…

Metal-semiconductor contacts play a key role in electronics. Here we show that for quasi-one dimensional (Q1D) structures such as nanotubes and nanowires, side contact with the metal only leads to weak band realignment, in contrast with…

The observed performances of carbon nanotube field effect transistors are examined using first-principles quantum transport calculations. We focus on the nature and role of the electrical contact of Au and Pd electrodes to open-ended…

The interface between a heavy electron coherent metallic phase and an incoherent normal metal phase is discussed. The Fermi momentum mismatch between the two phases causes the carriers to scatter at the interface. The interface conductance…

Using a first-principle pseudopotential approach, we have investigated the Schottky barrier heights of abrupt Al/Ge, Al/GaAs, Al/AlAs, and Al/ZnSe (100) junctions, and their dependence on the semiconductor chemical composition and surface…

We investigated transport properties of organic heterointerfaces formed by single-crystals of two organic donor-acceptor molecules, tetramethyltetraselenafulvalene (TMTSF) and 7,7,8,8-tetracyanoquinodimethane (TCNQ). Whereas the individual…

Contact resistance is a severe performance bottleneck for electronic devices based on two-dimensional layered (2D) semiconductors, whose contacts are Schottky rather than Ohmic. Although there is general consensus that the injection…

At a normal-metal/superconductor interface, an incident electron from the normal-metal (N) side can be normally reflected as an electron or Andreev reflected as a hole. We show that pronounced lateral shifts along the interface between the…

Two key subjects stand out in the pursuit of semiconductor research: material quality and contact technology. The fledging field of atomically thin transition metal dichalcogenides (TMDCs) faces a number of challenges in both efforts. This…

The pentatellurides, ZrTe5 and HfTe5 are layered compounds with one dimensional transition-metal chains that show a never understood temperature dependent transition in transport properties as well as recently discovered properties…

Schottky barrier field-effect transistors (SBFETs) based on few and mono layer phosphorene are simulated by the non-equilibrium Green's function formalism. It is shown that scaling down the gate oxide thickness results in pronounced…

Two mechanisms that drive metal-to-semiconductor transitions in single-walled carbon nanotubes are theoretically analyzed through a simple tight-binding model. By considering simple structural trends, the results demonstrate that…

The transmission of 2-keV electrons through a polyethylene terephthalate (PET) nanocapillary with a diameter of 800 nm and a length of 10 {\mu}m is studied. The transmitted electrons are detected using a microchannel plate (MCP) with a…

We report on a metal-insulator transition (MIT) that is observed in an electron system at the SmTiO3/SrTiO3 interface. This MIT is characterized by an abrupt transition at a critical temperature, below which the resistance changes by more…

Here we demonstrate that water-infiltrated nanoporous glass electrically switches an oxide semiconductor from an insulator to metal. We fabricated the field effect transistor structure on an oxide semiconductor, SrTiO3, using…

Two dimensional electron gases (2DEGs) formed at the interfaces of oxide heterostructures draw considerable interest owing to their unique physics and potential applications. Growing such heterostructures on conventional semiconductors has…