相关论文: Pinched Hysteresis Loops is the Fingerprint of Mem…

Proteresis, a complementary effect to well-known hysteresis, is an interesting phenomenon to be explored. As we know, the hysteric device is a bistable switch whose states depend on the system's history whereas the proteretic device states'…

Wang et al. claim [J. Appl. Phys. 125, 054504 (2019)] that a current-carrying wire interacting with a magnetic core represents a memristor. Here, we demonstrate that this claim is false. We first show that such memristor "discovery" is…

Memristors are resistive elements retaining information of their past dynamics. They have garnered substantial interest due to their potential for representing a paradigm change in electronics, information processing and unconventional…

An ideal memristor is defined as a resistor with memory that, when subject to a time-dependent current, $I(t)$, its resistance $R_M(q)$ depends {\it only} on the charge $q$ that has flowed through it, so that its voltage response is…

There are three theoretical models which purport to relate experimentally-measurable or fabrication-controllable device properties to the memristor's operation: 1. Strukov et al's phenomenological model; 2. Georgiou et al's Bernoulli…

The memristive device is one of the basic elements of novel, brain-inspired, fast, and energy-efficient information processing systems in which there is no separation between memorization and information analysis functions. Since the first…

A memristor is often identified by showing its distinctive pinched hysteresis curve and testing for the effect of frequency. The hysteresis size should relate to frequency and shrink to zero as the frequency approaches infinity. Although…

At the Faraday Discussion, in the paper titled `Neuromorphic computation with spiking memristors: habituation, experimental instantiation of logic gates and a novel sequence-sensitive perceptron model' it was demonstrated that a large…

Using memristive properties common for the titanium dioxide thin film devices, we designed a simple write algorithm to tune device conductance at a specific bias point to 1% relative accuracy (which is roughly equivalent to 7-bit precision)…

It has been suggested that all resistive-switching memory cells are memristors. The latter are hypothetical, ideal devices whose resistance, as originally formulated, depends only on the net charge that traverses them. Recently, an…

In this work, we show that a pinched-loop can be observed in the voltage-current plane when a series R-L circuit is current excited. Specifically, the resistance (R) in this circuit is variable and is voltage-controlled by the voltage…

This work is an an early stage of a larger project aiming at answering the question whether or not the Preisach map is really fingerprinting magnetic materials. More precisely, we are interested whether Preisach model of magnetic hysteresis…

There are certain classes of resistors, capacitors and inductors that, when subject to a periodic input of appropriate frequency, develop hysteresis loops in their characteristic response. Here, we show that the hysteresis of such memory…

Memristors are non-volatile nano-resistors. Their resistance can be tuned by applied currents or voltages and set to a large number of levels between two limit values. Thanks to these properties, memristors are ideal building blocks for a…

Nanoscale metal oxide memristors have potential in the development of brain-inspired computing systems that are scalable and efficient1-3. In such systems, memristors represent the native electronic analogues of the biological synapses.…

Memristive devices hold promise to improve the scale and efficiency of machine learning and neuromorphic hardware, thanks to their compact size, low power consumption, and the ability to perform matrix multiplications in constant time.…

We investigate the magnetic hysteresis of a superconducting microstrip resonator with a high edge barrier. We measure the magnetic hysteresis while either sweeping a magnetic field or tuning the edge barrier by high microwave current. We…

The magnetoelectric effects in multiferroics have a great potential in creating next-generation memory devices. We conceive a new concept of non-volatile memories based on a type of nonlinear magnetoelectric effects showing a…

Neuromorphic circuits mimic partial functionalities of brain in a bio-inspired information processing sense in order to achieve similar efficiencies as biological systems. While there are common mathematical models for neurons, which can be…

Nonreciprocal devices such as circulators and isolators belong to an important class of microwave components employed in applications like the measurement of mesoscopic circuits at cryogenic temperatures. The measurement protocols usually…