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The quantum Hall (QH) effect in two-dimensional electron systems (2DESs) is conventionally observed at liquid-helium temperatures, where lattice vibrations are strongly suppressed and bulk carrier scattering is dominated by disorder.…

Resonant electronic transmission through graphene-based double barriers (wells) is studied as a function of the incident wave vector, the widths and heights (depths) of the barriers (wells), and the separation between them. Resonant…

介观与纳米尺度物理 · 物理学 2007-05-23 J. Milton Pereira , P. Vasilopoulos , F. M. Peeters

Current interest in two-dimensional materials extends from graphene to others systems like single-layer hexagonal boron-nitride (h-BN), for the possibility of making heterogeneous structures to achieve exceptional properties that cannot be…

材料科学 · 物理学 2013-09-04 Jiangtao Wu , Baolin Wang , Yujie Wei , Ronggui Yang , Mildred Dresselhaus

Graphene on hexagonal boron nitride (hBN) can exhibit a topological phase via mutual crystallographic alignment. Recent measurements of nonlocal resistance ($R_{nl}$) near the secondary Dirac point (SDP) in ballistic graphene/hBN…

介观与纳米尺度物理 · 物理学 2020-12-21 Yang Li , Mario Amado , Timo Hyart , Grzegorz P. Mazur , Jason W. A. Robinson

Encapsulating graphene in hexagonal Boron Nitride has several advantages: the highest mobilities reported to date are achieved in this way, and precise nanostructuring of graphene becomes feasible through the protective hBN layers.…

介观与纳米尺度物理 · 物理学 2021-01-04 Yongping Du , Ning Xu , Xianqing Lin , Antti-Pekka Jauho

Hexagonal boron nitride (h-BN) is a promising two-dimensional insulator with a large band gap and low density of charged impurities that is isostructural and isoelectronic with graphene. Here we report the chemical and atomic-scale…

Due to their wide band gaps, III-N materials can exhibit behaviors ranging from the semiconductor class to the dielectric class. Through an analogy between a Metal/AlGaN/AlN/GaN diode and a MOS contact, we make use of this dual nature and…

We propose a graphene device that can generate spin-dependent negative differential resistance (NDR). The device is composed of a sufficiently wide and short graphene and two gated EuO strips deposited on top of it. This scheme avoids…

介观与纳米尺度物理 · 物理学 2018-01-26 Yu Song , Yang Liu , Xiaolong Feng , Fei Yan , Wei-Zhi Zhang

The observation of novel physical phenomena such as Hofstadter's butterfly, topological currents and unconventional superconductivity in graphene have been enabled by the replacement of SiO$_2$ with hexagonal Boron Nitride (hBN) as a…

介观与纳米尺度物理 · 物理学 2019-01-18 Adolfo De Sanctis , Jake D. Mehew , Saad Alkhalifa , Freddie Withers , Monica F. Craciun , Saverio Russo

We study fully hexagonal boron nitride (hBN)-encapsulated graphene spin valve devices at room temperature. The device consists of a graphene channel encapsulated between two crystalline hBN flakes; thick-hBN flake as a bottom gate…

介观与纳米尺度物理 · 物理学 2016-04-01 M. Gurram , S. Omar , S. Zihlmann , P. Makk , C. Schönenberger , B. J. van Wees

We fabricate and measure electrically-gated tunnel junctions in which the insulating barrier is a sliding van der Waals ferroelectric made from parallel-stacked bilayer hexagonal boron nitride and the electrodes are single-layer graphene.…

介观与纳米尺度物理 · 物理学 2025-04-15 Bozo Vareskic , Finn G. Kennedy , Takashi Taniguchi , Kenji Watanabe , Kenji Yasuda , Daniel C. Ralph

A bilayer graphene based electrostatically doped tunnel field-effect transistor (BED-TFET) is proposed in this work. Unlike graphene nanoribbon TFETs in which the edge states deteriorate the OFF-state performance, BED-TFETs operate based on…

介观与纳米尺度物理 · 物理学 2016-05-06 Fan W. Chen , Hesameddin Ilatikhameneh , Gerhard Klimeck , Zhihong Chen , Rajib Rahman

Boron nitride is a promising material for nanotechnology applications due to its two-dimensional graphene-like, insulating, and highly-resistant structure. Recently it has received a lot of attention as a substrate to grow and isolate…

材料科学 · 物理学 2013-09-25 Claudio Attaccalite , Ludger Wirtz , Andrea Marini , Angel Rubio

We investigate the transport properties of double-gated bilayer graphene nanoribbons at room temperature. The devices were fabricated using conventional CMOS-compatible processes. By analyzing the dependence of the resistance at the charge…

介观与纳米尺度物理 · 物理学 2015-05-18 Bartholomaeus N. Szafranek , Daniel Schall , Martin Otto , Daniel Neumaier , Heinrich Kurz

We present an analytical device model for a field-effect transistor based on a heterostructure which consists of an array of nanoribbons clad between the highly conducting substrate (the back gate) and the top gate controlling the…

介观与纳米尺度物理 · 物理学 2015-05-13 V. Ryzhii , M. Ryzhii , A. Satou , T. Otsuji

Hexagonal boron nitride (h-BN) is an important insulating substrate for two-dimensional (2D) heterostructure devices and possesses high dielectric strength comparable to SiO2. Here, we report two clear differences in their physical…

材料科学 · 物理学 2018-07-19 Yoshiaki Hattori , Takashi Taniguchi , Kenji Watanabe , Kosuke Nagashio

Combining both vertical and in-plane two-dimensional (2D) heterostructures opens up the possibility to create an unprecedented architecture using 2D atomic layer building blocks. The thermal transport properties of such mixed…

材料科学 · 物理学 2020-07-16 Ting Liang , Ping Zhang , Man Zhou , Peng Yuan , Daoguo Yang

A thermal diode based on the asymmetric radiative heat transfer between nanoparticles assisted by the nonreciprocal graphene plasmons waveguides is proposed in this work. The thermal diode system consists of two particles and a drift-biased…

介观与纳米尺度物理 · 物理学 2020-03-18 Yong Zhang , Cheng-Long Zhou , Hong-Liang Yi , He-Ping Tan

In heterostructures consisting of atomically thin crystals layered on top of one another, lattice mismatch or rotation between the layers results in long-wavelength moir\'e superlattices. These moir\'e patterns can drive significant band…

介观与纳米尺度物理 · 物理学 2019-10-01 Nathan R. Finney , Matthew Yankowitz , Lithurshanaa Muraleetharan , K. Watanabe , T. Taniguchi , Cory R. Dean , James Hone

The electron transport through the triple-barrier resonant tunnelling diode (TBRTD) have been studied by the self-consistent numerical method for the Wigner-Poisson problem. The electron flow through the TBRTD can be controlled by the gate…

介观与纳米尺度物理 · 物理学 2011-03-03 P. Wojcik , B. J. Spisak , M. Woloszyn , J. Adamowski