相关论文: Vertical Graphene Base Transistor

We report on gate hysteresis in resistance on high quality graphene/h-BN devices. We observe a thermal activated hysteretic behavior in resistance as a function of the applied gate voltage at temperatures above 375K. In order to investigate…

Graphene/silicon heterostructures have attracted tremendous interest as a new platform for diverse electronic and photonic devices such as barristors, solar cells, optical modulators, and chemical sensors. The studies to date largely focus…

Graphene is of interest in the development of next-generation electronics due to its high electron mobility, flexibility and stability. However, graphene transistors have poor on/off current ratios because of the absence of a bandgap. One…

Graphene has emerged as a novel platform for opto-electronic applications and photodetector, but the inefficient conversion from light to current has so far been an important roadblock. The main challenge has been to increase the light…

In this work, we present a performance analysis of Field Effect Transistors based on recently fabricated 100% hydrogenated graphene (the so-called graphane) and theoretically predicted semi-hydrogenated graphene (i.e. graphone). The…

Among the many anticipated applications of graphene, some - such as transistors for Si microelectronics - would greatly benefit from the possibility to deposit graphene directly on a semiconductor grown on a Si wafer. We report that Ge(001)…

Electron devices based on graphene have lately received a considerable interest; in fact, they could represent the ultimate miniaturization, since the active area is only one atom tick. However, the gapless dispersion relation of graphene…

Recent intense electrical and optical studies of graphene have pushed the material to the forefront of optoelectronic research. Of particular interest is the few terahertz (THz) frequency regime where efficient light sources and highly…

Scientists are always yearning for new and exciting ways to unlock graphene's true potential. However, recent reports suggest this two-dimensional material may harbor some unique properties, making it a viable candidate for use in…

We present a graphene-based phase shifter for radio-frequency (RF) phase-array applications. The core of the designed phase-shifting system consists of a graphene field-effect transistor (GFET) used in a common source amplifier…

Establishing a reliable communication interface between the brain and electronic devices is of paramount importance for exploiting the full potential of neural prostheses. Current microelectrode technologies for recording electrical…

Graphene nanoribbons (GNRs) have been proposed as potential building blocks for field effect transistor (FET) devices due to their quantum confinement bandgap. Here, we propose a novel GNR device concept, enabling the control of both charge…

Graphene is a promising material for applications as a channel in graphene field-effect transistors (GFETs) which may be used as a building block for optoelectronics, high-frequency devices and sensors. However, these devices require gate…

We report the batch fabrication of graphene field-effect-transistors (GFETs) with nanoperforated graphene as channel. The transistors were cut and encapsulated. The encapsulated GFETs display saturation regions that can be tuned by…

A bilayer graphene based electrostatically doped tunnel field-effect transistor (BED-TFET) is proposed in this work. Unlike graphene nanoribbon TFETs in which the edge states deteriorate the OFF-state performance, BED-TFETs operate based on…

As conventional silicon technology is approaching its fundamental material and physical limits with continuous scaling, there is a growing push to look for new platform to design memory circuits for nanoelectronic applications. In this…

Top-gated, few-layer graphene field-effect transistors (FETs) fabricated on thermally-decomposed semi-insulating 4H-SiC substrates are demonstrated. Physical vapor deposited SiO2 is used as the gate dielectric. A two-dimensional hexagonal…

Graphene has attracted enormous interests due to its unique physical, mechanical, and electrical properties. Specially, graphene-based field-effect transistors (FETs) have evolved rapidly and are now considered as an option for conventional…

Graphene is promising for nanoscale, efficient, ultra-fast photo- and opto-electronic devices because of its remarkable electrical and optical properties, such as fast electron relaxation and heat dissipation. Here, we realize…

An analytical device model for a graphene nanoribbon phototransistor (GNR-PT) is presented. GNR-PT is based on an array of graphene nanoribbons with the side source and drain contacts, which is sandwiched between the highly conducting…