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相关论文: Mechanism for puddle formation in graphene

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We calculate the carrier density dependent ground state properties of graphene in the presence of random charged impurities in the substrate taking into account disorder and interaction effects non-perturbatively on an equal footing in a…

介观与纳米尺度物理 · 物理学 2008-10-17 Enrico Rossi , S. Das Sarma

Molecular-crystalline duality of graphene ensures a tight alliance of its physical and chemical natures, each of which is unique in its own way. The paper examines the physical-chemical harmony and/or confrontation in terms of the molecular…

介观与纳米尺度物理 · 物理学 2013-12-05 Elena F. Sheka

We suggest a simple model of disorder in graphene assuming that there are randomly distributed positive and negative centers with equal concentration $N/2$ in the bulk of silicon oxide substrate. We show that at zero gate voltage such…

介观与纳米尺度物理 · 物理学 2009-11-13 B. I. Shklovskii

The wavefront dislocation is an important and ubiquitous phenomenon in wave fields. It is closely related to the phase singularity in a wave function. Some recent studies have verified that the wavefront dislocations in the local density of…

介观与纳米尺度物理 · 物理学 2024-10-30 Yu-Chen Zhuang , Qing-Feng Sun

Superfluidity has recently been reported in double electron-hole bilayer graphene. The multiband nature of the bilayers is important because of the very small band gaps between conduction and valence bands. The long range nature of the…

超导电性 · 物理学 2019-04-24 Sara Conti , Andrea Perali , Francois M. Peeters , David Neilson

We show that a moderately strong constant electric field in the plane of a monolayer graphene sheet can create particle-hole pairs at an observable rate. The pairs undergo zitterbewegung in opposite directions leading to a Hall-like…

介观与纳米尺度物理 · 物理学 2008-06-03 J. C. Martinez , M. B. A. Jalil , S. G. Tan

Disordered Fermi-Dirac distributions are used to model, within a straightforward and essentially phenomenological Boltzmann equation approach, the electron/hole transport across graphene puddles. We establish, with striking experimental…

介观与纳米尺度物理 · 物理学 2015-05-30 L. Moriconi , D. Niemeyer

We study the problem of impurities and mid-gap states in a biased graphene bilayer. We show that the properties of the bound states, such as localization lengths and binding energies, can be controlled externally by an electric field…

介观与纳米尺度物理 · 物理学 2013-05-29 Johan Nilsson , A. H. Castro Neto

Bilayer graphene has drawn significant attention due to the opening of a band gap in its low energy electronic spectrum, which offers a promising route to electronic applications. The gap can be either tunable through an external electric…

介观与纳米尺度物理 · 物理学 2015-05-27 Gregory M. Rutter , Suyong Jung , Nikolai N. Klimov , David B. Newell , Nikolai B. Zhitenev , Joseph A. Stroscio

In this chapter, semi-analytical models for the calculation of the quantum capacitance of both monolayer and bilayer graphene and its nanoribbons, are presented. Since electron-hole puddles are experimental facts in all graphene samples,…

介观与纳米尺度物理 · 物理学 2016-09-07 George S. Kliros

Gapless spectrum of graphene allows easy spatial separation of electrons and holes with an external in-plane electric field. Guided collective plasmon modes can propagate along the separation line, whose amplitude decays with the distance…

介观与纳米尺度物理 · 物理学 2012-05-23 N. M. Hassan , V. V. Mkhitaryan , E. G. Mishchenko

Magic angle twisted bilayer graphene has emerged as a powerful platform for studying strongly correlated electron physics, owing to its almost dispersionless low-energy bands and the ability to tune the band filling by electrostatic gating.…

介观与纳米尺度物理 · 物理学 2021-07-21 Nikhil Tilak , Xinyuan Lai , Shuang Wu , Zhenyuan Zhang , Mingyu Xu , Raquel de Almeida Ribeiro , Paul C Canfield , Eva Y. Andrei

Due to its strong bonds graphene can stretch up to 25% of its original size without breaking. Furthermore, mechanical deformations lead to the generation of pseudo-magnetic fields (PMF) that can exceed 300 T. The generated PMF has opposite…

介观与纳米尺度物理 · 物理学 2017-11-22 Slavisa P. Milovanovic , Francois M. Peeters

The statistical properties of the carrier density profile of graphene in the ground state in the presence particle-particle interaction and random charged impurity in zero gate voltage has been recently obtained by Najafi \textit{et al.}…

统计力学 · 物理学 2018-07-18 M. N. Najafi , N. Ahadpour , J. Cheraghalizadeh , H. Dashti-Naserabadi

Understanding disorder in graphene is essential for electronic applications; in contrast to conventional materials, the extraordinarily low electron-phonon scattering1, 2 in graphene implies that disorder3-7 dominates its resistivity even…

介观与纳米尺度物理 · 物理学 2011-11-14 Jun Yan , Michael S. Fuhrer

We probe the local inhomogeneities in the electronic properties of exfoliated graphene due to the presence of charged impurities in the SiO2 substrate using a combined scanning tunneling and electrostatic force microscope. Contact potential…

介观与纳米尺度物理 · 物理学 2012-02-21 Andres Castellanos-Gomez , Roel H. M. Smit , Nicolás Agraït , Gabino Rubio-Bollinger

We investigate the effects of charged impurity distributions and carrier-carrier interactions on electronic transport in graphene on SiO$_2$ by employing a self-consistent coupled simulation of carrier transport and electrodynamics. We show…

介观与纳米尺度物理 · 物理学 2014-05-21 N. Sule , S. C. Hagness , I. Knezevic

The electromagnetic response of bilayer graphene in a magnetic field is studied in comparison with that of monolayer graphene. Both types of graphene turn out to be qualitatively quite similar in dielectric and screening characteristics,…

介观与纳米尺度物理 · 物理学 2009-11-13 T. Misumi , K. Shizuya

We demonstrate that for gapped bilayer graphene, the nonlinear nature of the screening of an external disorder potential and the resulting inhomogeneity of the electron liquid are crucial for describing the electronic compressibility. In…

介观与纳米尺度物理 · 物理学 2012-11-06 D. S. L. Abergel , E. Rossi , S. Das Sarma

We investigate the noise in single layer graphene devices from equilibrium to far from equilibrium and found that the 1/f noise shows an anomalous dependence on the source-drain bias voltage (VSD). While the Hooge relation is not the case…