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We demonstrate the direct dry transfer of large area Chemical Vapor Deposition graphene to several polymers (low density polyethylene, high density polyethylene, polystyrene, polylactide acid and…

Various bandstructure engineering methods have been studied to improve the performance of graphitic transparent conductors; however none demonstrated an increase of optical transmittance in the visible range. Here we measure in situ optical…

Graphene is a two-dimensional (2D) semimetal with high mobility in charge carriers due to the existence of Dirac points. Silicene is another promising material, with properties analog to graphene. Many silicon (Si) based electronic devices…

材料科学 · 物理学 2021-09-07 K M Abeywickrama , P K D D P Pitigala , W W P De Silva

The photo-luminescence features of Ge-oxygen defect centers in a 100nm thick Ge-doped silica film on a pure silica substrate were investigated by looking at the emission spectra and time decay detected under synchrotron radiation excitation…

材料科学 · 物理学 2009-11-13 F. Messina , S. Agnello , R. Boscaino , M. Cannas , S. Grandi , E. Quartarone

High-quality, large-area epitaxial graphene can be grown on metal surfaces but its transport properties cannot be exploited because the electrical conduction is dominated by the substrate. Here we insulate epitaxial graphene on Ru(0001) by…

We apply spinning-disc picometrology to measure the complex refractive index of graphene on thermal oxide on silicon. The refractive index varies from n = 2.4-1.0i at 532 nm to n = 3.0-1.4i at 633 nm at room temperature. The dispersion is…

材料科学 · 物理学 2008-12-19 Xuefeng Wang , Yong P. Chen , David D. Nolte

Heat transfer at the interface between two materials is becoming increasingly important as the size of electronic devices shrinks. Most studies concentrate on the interfacial thermal conductance between either crystalline-crystalline or…

介观与纳米尺度物理 · 物理学 2024-09-09 Julien El Hajj , Christophe Adessi , Michaël de San Feliciano , Gilles Ledoux , Samy Merabia

It is highly desirable to integrate graphene into existing semiconductor technology, where the combined system is thermodynamically stable yet maintain a Dirac cone at the Fermi level. Firstprinciples calculations reveal that a certain…

介观与纳米尺度物理 · 物理学 2012-11-16 Yuanchang Li , Pengcheng Chen , Gang Zhou , Jia Li , Jian Wu , Bing-Lin Gu , S. B. Zhang , Wenhui Duan

We present first-principles calculations on systems consisting of a few layers of graphene and lithium. In particular, we investigate the evolution of the electron-phonon coupling strength with increasing number of layers. We find that, for…

超导电性 · 物理学 2013-10-15 D. M. Guzman , H. M. Alyahyaei , R. A. Jishi

The formation of graphene on any desirable substrate is extremely essential for the successful replacement of Si with graphene in all technological applications in the beyond-CMOS era. Recently, we observed that a Ti layer formed on…

材料科学 · 物理学 2010-05-27 A. Hashimoto , H. Terasaki , K. Morita , H. Hibino , S. Tanaka

Top-gated, few-layer graphene field-effect transistors (FETs) fabricated on thermally-decomposed semi-insulating 4H-SiC substrates are demonstrated. Physical vapor deposited SiO2 is used as the gate dielectric. A two-dimensional hexagonal…

介观与纳米尺度物理 · 物理学 2009-11-13 Y. Q. Wu , P. D. Ye , M. A. Capano , Y. Xuan , Y. Sui , M. Qi , J. A. Cooper

The 5x5, 6rt(3)x6rt(3)-R30deg, and graphene-covered 6rt(3)x6rt(3)-R30deg reconstructions of the SiC(0001) surface are studied by scanning tunneling microscopy and spectroscopy. For the 5x5 structure a rich spectrum of surface states is…

材料科学 · 物理学 2010-11-23 Shu Nie , R. M. Feenstra

Single-crystalline transition metal films are ideal playing fields for the epitaxial growth of graphene and graphene-base materials. Graphene-silicon layered structures were successfully constructed on Ir(111) thin film on Si substrate with…

We report high room-temperature mobility in single layer graphene grown by Chemical Vapor Deposition (CVD) after wet transfer on SiO$_2$ and hexagonal boron nitride (hBN) encapsulation. By removing contaminations trapped at the interfaces…

Multilayer graphene (MLG) thin films are deposited on silicon oxide substrates by mechanical exfoliation (or 'scotch-tape method') from Kish graphite. The thickness and number of layers are determined from both Atomic Force Microscopy (AFM)…

介观与纳米尺度物理 · 物理学 2014-08-26 E. S. Sadki , H. Okazaki , T. Watanabe , T. Yamaguchi , Y. Takano

A graphene layer on top of a dielectric can dramatically influence ability of the material to radiative heat transfer. This property of graphene is used to improve the performance and reduce costs of near-field thermophotovoltaic cells.…

介观与纳米尺度物理 · 物理学 2014-09-16 V. B. Svetovoy , G. Palasantzas

Heat transfer between graphene and water is pivotal for various applications, including solarthermal vapor generation and the advanced manufacturing of graphene-based hierarchical structures in solution. In this study, we employ a…

We study theoretically how energy and heat are transferred between the two-dimensional layers of bilayer carrier systems due to near-field interlayer carrier interaction. We derive general expressions for the interlayer heat transfer and…

介观与纳米尺度物理 · 物理学 2015-06-05 Mika Prunnila , Sampo J. Laakso

The smearing of the graphene/graphane interface due to the thermally activated migration of hydrogen atoms is studied by the molecular dynamics method. Contrary to expectations, it is found that the fast spontaneous regeneration of this…

介观与纳米尺度物理 · 物理学 2015-05-14 L. A. Openov , A. I. Podlivaev

Using nonequilibrium molecular dynamics simulations, we study the heat conduction in graphene flakes composed by two regions. One region is mass-loaded and the other one is intact. It is found that the mass interface between the two regions…

材料科学 · 物理学 2015-05-30 Jigger Cheh , Hong Zhao