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Spin-dependent transport processes in thin near-surface doping regions created by low energy ion implantation of arsenic in silicon are detected by two methods, spin-dependent recombination (SDR) using microwave photoconductivity and…

Spin-dependent relaxation and recombination processes in $\gamma$-irradiated $n$-type Czochralski-grown silicon are studied using continuous wave (cw) and pulsed electrically detected magnetic resonance (EDMR). Two processes involving the…

材料科学 · 物理学 2014-07-22 David P. Franke , Felix Hoehne , Leonid S. Vlasenko , Kohei M. Itoh , Martin S. Brandt

Low-field (6-110 mT) magnetic resonance of bismuth (Bi) donors in silicon has been observed by monitoring the change in photoconductivity induced by spin dependent recombination. The spectra at various resonance frequencies show signal…

Spin-dependent processes play a crucial role in organic electronic devices. Spin coherence can give rise to spin mixing due to a number of processes such as hyperfine coupling, and leads to a range of magnetic field effects. However, it is…

介观与纳米尺度物理 · 物理学 2016-09-07 Marzieh Kavand , Douglas Baird , Kipp van Schooten , Hans Malissa , John M. Lupton , Christoph Boehme

Dielectric interfaces critical for metal-oxide-semiconductor (MOS) electronic devices, such as the Si/SiO$_2$ MOS field effect transistor (MOSFET), possess trap states that can be visualized with electrically-detected spin resonance…

材料科学 · 物理学 2020-08-21 Nicholas J. Harmon , James P. Ashton , Patrick M. Lenahan , Michael E. Flatté

We investigate the spin species relevant for the spin-dependent recombination used for the electrical readout of coherent spin manipulation in phosphorus-doped silicon. Via a multi-frequency pump-probe experiment in pulsed electrically…

材料科学 · 物理学 2010-02-02 Felix Hoehne , Hans Huebl , Bastian Galler , Martin Stutzmann , Martin S. Brandt

Electrically detected magnetic resonance (EDMR) and near-zero field magnetoresistance (NZFMR) are techniques that probe defect states at dielectric interfaces critical for metal-oxide-semiconductor (MOS) electronic devices such as the…

材料科学 · 物理学 2023-12-27 Nicholas J. Harmon , James P. Ashton , Patrick M. Lenahan , Michael E. Flatté

Spin dependent recombination in GaAsN offers many interesting possibilities in the design of spintronic devices mostly due to its astounding capability to reach conduction band electron spin polarizations close to 100% at room temperature.…

The spin-dependent recombination (SDR) has been observed in GaAs_{1-x}N_{x} (x = 2.1, 2.7, 3.4%) at room temperature. It reveals itself in a decrease of the edge photoluminescence (PL) intensity by more than a factor of 3 when either the…

Electrical detection of spins is an essential tool in understanding the dynamics of spins in semiconductor devices, providing valuable insights for applications ranging from optoelectronics and spintronics to quantum information processing.…

介观与纳米尺度物理 · 物理学 2015-06-23 C. C. Lo , M. Urdampilleta , P. Ross , M. F. Gonzalez-Zalba , J. Mansir , S. A. Lyon , M. L. W. Thewalt , J. J. L. Morton

In weakly spin-orbit coupled materials, the spin-selective nature of recombination can give rise to large magnetic-field effects, for example on electro-luminescence from molecular semiconductors. While silicon has weak spin-orbit coupling,…

介观与纳米尺度物理 · 物理学 2018-02-21 F. Chiodi , S. L. Bayliss , L. Barast , D. Débarre , H. Bouchiat , R. H. Friend , A. D. Chepelianskii

Pulsed electrically-detected magnetic resonance of phosphorous (31P) in bulk crystalline silicon at very high magnetic fields (B > 8.5 T) and low temperatures (T = 2.8 K) is presented. We find that the spin-dependent capture and reemission…

量子物理 · 物理学 2009-09-25 G. W. Morley , D. R. McCamey , H. A. Seipel , L. -C. Brunel , J. van Tol , C. Boehme

We report on the non-trivial field dependence of charge carrier recombination in an organic blend at low temperatures. A new microwave resonance technique for monitoring charge recombination in organic semiconductors at low temperatures is…

介观与纳米尺度物理 · 物理学 2015-09-09 S. Athanasopoulos , N. C. Greenham , R. H. Friend , A. D. Chepelianskii

Continuous wave optically and electrically detected magnetic resonance spectroscopy (cwODMR/cwEDMR) allow the investigation of paramagnetic states involved in spin-dependent transitions, like recombination and transport. Although…

材料科学 · 物理学 2012-09-11 Sang-Yun Lee , Seoyoung Paik , Dane R. McCamey , Christoph Boehme

We present experiments to systematically study the time constants of spin-dependent recombination processes in semiconductors using pulsed electrically detected magnetic resonance (EDMR). The combination of time-programmed optical…

The unique properties of organic semiconductors make them versatile base materials for many applications ranging from light emitting diodes to transistors. The low spin-orbit coupling typical for carbon-based materials and the resulting…

Electrically Detected Magnetic Resonance (EDMR) was used to study a series of multilayer organic devices based on aluminum (III) 8-hydroxyquinoline. These devices were designed to identify the micoscopic origin of different spin dependent…

材料科学 · 物理学 2015-06-24 G. B. Silva , C. F. O. Graeff , F. Nuesch , L. Zuppiroli

Electrically-detected magnetic resonance (EDMR) provides a highly sensitive method for reading out the state of donor spins in silicon. The technique relies on a spin-dependent recombination (SDR) process involving dopant spins that are…

介观与纳米尺度物理 · 物理学 2017-07-05 Lihuang Zhu , Kipp J. van Schooten , Mallory. L. Guy , Chandrasekhar Ramanathan

We present a theoretical investigation of the radiative recombination of twisted Bessel electrons with initially hydrogen-like (finally helium-like) heavy ions. In our study, we focus especially on the linear polarization of x-ray photons…

原子物理 · 物理学 2021-09-08 Anna V. Maiorova , Anton A. Peshkov , Andrey Surzhykov

We have studied the nature and dynamics of spin-dependent charge carrier recombination in Tris(8-hydroxyquinolinato) aluminum (Alq$_3$) films in light emitting diodes at room temperature using continuous wave and pulsed electrically…

介观与纳米尺度物理 · 物理学 2020-09-09 H. Popli , X. Liu , T. H. Tennahewa , M. Y. Teferi , E. Lafalce , H. Malissa , Z. V. Vardeny , C. Boehme
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