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相关论文: Interface Structure of Graphene on SiC(000-1)

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We study clean, edge-contacted graphene/superconductor interfaces in both the quantum Hall (QH) and zero field regimes. We find that Andreev reflection is substantially stronger than at an interface with a semiconductor two-dimensional…

介观与纳米尺度物理 · 物理学 2025-06-30 Alexey Bondarev , Gu Zhang , Harold U. Baranger

The room-temperature Raman signatures from graphene layers on sapphire and glass substrates were compared with those from graphene on GaAs substrate and on the standard Si/SiO2 substrate, which served as a reference. It was found that while…

材料科学 · 物理学 2007-12-03 I. Calizo , W. Bao , F. Miao , C. N. Lau , A. A. Balandin

Work function-mediated charge transfer in graphene/$\alpha$-RuCl$_3$ heterostructures has been proposed as a strategy for generating highly-doped 2D interfaces. In this geometry, graphene should become sufficiently doped to host surface and…

Transport properties of multigraphene layers on 6H-SiC substrates fabricated by thermal graphitization of SiC were studied. The principal result is that these structures were shown to contain a nearly perfect graphene layer situated between…

Chemical oxidation of multilayer graphene grown on silicon carbide yields films exhibiting reproducible characteristics, lateral uniformity, smoothness over large areas, and manageable chemical complexity, thereby opening opportunities to…

材料科学 · 物理学 2014-03-20 S. Zhou , S. Kim , E. Di Gennaro , Y. Hu , C. Gong , X. Lu , C. Berger , W. de Heer , E. Riedo , Y. J. Chabal , C. Aruta , A. Bongiorno

Classical molecular-dynamics simulations were carried out to study epitaxial growth of graphene on 6H-SiC(0001) substrate. It was found that there exists a threshold annealing temperature above which we observe formation of graphitic…

介观与纳米尺度物理 · 物理学 2012-02-23 N. Jakse , R. Arifin , S. K. Lai

The electrical transport properties of epitaxial graphene layers are correlated with the SiC surface morphology. In this study we show by atomic force microscopy and Raman measurements that the surface morphology and the structure of the…

The k-projection method provides an approach to separate the contributions from different constituents in heterostructure systems and can act as an aid to connect the results of experiments and calculations. We show that the technique can…

材料科学 · 物理学 2018-12-27 Mingxing Chen , M. Weinert

We show that by using an original method, bulk graphite can be bonded onto borosilicate glass or potentially any insulating substrate with ionic conductivity and then cleaved off to leave single or few layer graphene on the substrate,…

材料科学 · 物理学 2009-04-06 Abhay Shukla , Rakesh Kumar , Javed Mazher , Adrian Balan

We present a new method of producing a densely ordered array of epitaxial graphene nanoribbons (GNRs) using vicinal SiC surfaces as a template, which consist of ordered pairs of (0001) terraces and nanofacets. Controlled selective growth of…

Real time electron microscopy observation on morphological changes in gold nano structures deposited on Si (100) surfaces as a function of annealing temperatures has been reported. Two types of interfaces with the substrate silicon were…

介观与纳米尺度物理 · 物理学 2017-11-27 Ashutosh Rath , J. K. Dash , R. R. Juluri , A Rosenauer , P V Satyam

Titanium (Ti) is an adhesion and contact metal commonly used in nanoelectronics and two-dimensional (2D) materials research. However, when Ti is deposited on graphene (Gr), we obtain dramatically different film morphology depending on the…

Monolayer epitaxial graphene is an appropriate candidate for a wide variety of electronic and optical applications. One advantage of growing graphene on the Si face of SiC is that it develops as a single crystal, as does the layer…

We report on detailed microscopy studies of graphene and few-layer-graphene produced by mechanical exfoliation on various semi-conducting substrates. We demonstrate the possibility to prepare and analyze graphene on (001)-GaAs, manganese…

材料科学 · 物理学 2009-11-13 U. Stöberl , U. Wurstbauer , W. Wegscheider , D. Weiss , J. Eroms

The implementation of graphene in semiconducting technology requires the precise knowledge about the graphene-semiconductor interface. In our work the structure and electronic properties of the graphene/$n$-Ge(110) interface are…

In this paper, we study the morphologic interaction between graphene and Si nanowires on a SiO2 substrate, using molecular mechanics simulations. Two cases are considered: 1) a graphene nanoribbon intercalated by a single Si nanowire on a…

材料科学 · 物理学 2011-11-21 Zhao Zhang , Teng Li

Because of the dominant role of the surface of molecules and their individuality, molecules behave dis-tinctively in a confined space, which has far-reaching implications in many physical, chemical and bio-logical systems. Here, we…

介观与纳米尺度物理 · 物理学 2014-04-29 DaeEung Lee , Gwanghyun Ahn , Sunmin Ryu

Suspended graphene membrane presents a particular structure with fundamental interests and applications in nanomechanics, thermal transport and optoelectronics. Till now, the commonly used geometries are still quite simple and limited to…

Interfacing graphene with solid-state devices and maintaining it free of contamination is a crucial step towards a functioning device, be it a semiconductor structure or any other device for technological applications. We take advantage of…

介观与纳米尺度物理 · 物理学 2014-08-27 Jean-Nicolas Longchamp , Conrad Escher , Hans-Werner Fink

Using atomistic simulations we determine the roughness and the thermal properties of a suspended graphane sheet. As compared to graphene we found that hydrogenated graphene has: 1) a larger thermal contraction, 2) the roughness exponent at…

介观与纳米尺度物理 · 物理学 2013-05-29 M. Neek-Amal , F. M. Peeters