相关论文: Probing Band-Tail States in Silicon MOS Heterostru…

Electron-beam (e-beam) lithography is commonly used in fabricating metal-oxide-silicon (MOS) quantum devices but creates defects at the Si/SiO$_2$ interface. Here we show that a forming gas anneal is effective at removing shallow defects…

A multi-frequency electron spin resonance (ESR) study provides evidence for the occurrence of low temperature ferromagnetic/spin-glass behavior in aligned arrays of sub-nanometer single walled carbon nanotubes confined in zeolite…

We report electron spin resonance (ESR) measurements on a large-area silicon MOSFET. An ESR signal at g-factor 1.9999(1), and with a linewidth of 0.6 G, is observed and found to arise from two-dimensional (2D) electrons at the Si/SiO2…

Historically, electron spin resonance (ESR) has provided excellent insight into the electronic, magnetic, and chemical structure of samples hosting spin centers. In particular, the hyperfine interaction between the electron and the nuclear…

We describe a fully broadband approach for electron spin resonance (ESR) experiments where it is possible to not only tune the magnetic field but also the frequency continuously over wide ranges. Here a metallic coplanar transmission line…

Edge/surface states often appear in a topologically nontrivial phase, when the system has a boundary. The edge state of a one-dimensional topological insulator is one of the simplest examples. Electron Spin Resonance (ESR) is an ideal probe…

We develop an analytical method for the processing of electron spin resonance (ESR) spectra. The goal is to obtain the distributions of trapped carriers over both their degree of localization and their binding energy in semiconductor…

Dielectric interfaces critical for metal-oxide-semiconductor (MOS) electronic devices, such as the Si/SiO$_2$ MOS field effect transistor (MOSFET), possess trap states that can be visualized with electrically-detected spin resonance…

We used electron spin resonance (ESR) combined with scanning tunneling microscopy (STM) to measure hydrogenated Ti (spin-1/2) atoms at low-symmetry binding sites on MgO in vector magnetic fields. We found strongly anisotropic g-values in…

Solid-state devices used for quantum computation and quantum sensing applications are adversely affected by loss and noise caused by spurious, charged two-level systems (TLS) and stray paramagnetic spins. These two sources of noise are…

This work reports an ESR study of low energy, low fluence phosphorus ion implantation into silicon in order to observe the activation of phosphorus donors placed in close proximity to the Si-SiO2 interface. Electrical measurements, which…

Transition metal dichalcogenide MoS2 is a two-dimensional material, attracting much attention for next-generation applications thanks to rich functionalities stemmed from the crystal structure. Many experimental and theoretical works have…

We study a scheme for electrical detection of the spin resonance (ESR) of a single electron trapped near a Field Effect Transistor (FET) conduction channel. In this scheme, the resonant Rabi oscillations of the trapped electron spin cause a…

The main feature of amorphous materials is the presence of excess vibrational modes at low energies, giving rise to the so called "boson peak" in neutron and optical spectroscopy. These same modes manifest themselves as two level systems…

We report on magnetization and electron spin resonance (ESR) measurements of Sr$_{2}$VO$_4$ with orthorhombic symmetry. In this dimer system the $V^{4+}$ ions are in tetrahedral environment and are coupled by an antiferromagnetic…

Electron spin resonance (ESR) spectroscopy in scanning tunneling microscopy (STM) has enabled probing the electronic structure of single magnetic atoms and molecules on surfaces with unprecedented energy resolution, as well as demonstrating…

We report the development of a continuous-wave and pulsed X-band electron spin resonance (ESR) spectrometer for the study of spins on ordered surfaces down to cryogenic temperatures. The spectrometer operates in ultra-high vacuum and…

The recent discovery of skyrmions in Cu$_2$OSeO$_3$ has established a new platform to create and manipulate skyrmionic spin textures. We use high-field electron spin resonance (ESR) spectroscopy combining a terahertz free electron laser and…

Using low-energy muons, we map the charge carrier concentration as a function of depth and electric field across the \SiOSi interface up to a depth of \SI{100}{\nano\meter} in Si-based MOS capacitors. The results show that the formation of…

Using positive muons as local probes implanted at low energy enables gathering information about the material of interest with nanometer depth resolution (low energy muon spin rotation spectroscopy (LE-$\mu$SR). In this work, we leverage…