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相关论文: Antiferromagnetic state in bilayer graphene

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In a Bernal-stacked graphene bilayer, an electronic state in Landau level $% N=0$ is described by its guiding-center index $X$ (in the Landau gauge) and by its valley, spin, and orbital indices $\xi =\pm K,\sigma =\pm 1,$ and $% n=0,1.$…

介观与纳米尺度物理 · 物理学 2014-01-08 J. Lambert , R. Côté

We compute the phase diagram of a biased graphene bilayer. The existence of a ferromagnetic phase is discussed with respect both to carrier density and temperature. We find that the ferromagnetic transition is first order, lowering the…

介观与纳米尺度物理 · 物理学 2008-05-06 Eduardo V. Castro , N. M. R. Peres , T. Stauber , N. A. P. Silva

We present a theoretical study of gap opening in the zeroth Landau level in gapped graphene as a result of pseudo-Zeeman interaction. The applied magnetic field couples with the valley pseudospin degree of freedom of the charge carriers…

介观与纳米尺度物理 · 物理学 2015-06-04 M. Tahir , K. Sabeeh

We study the correlated insulating phases of twisted bilayer graphene (TBG) in the absence of lattice strain at integer filling $\nu=\pm3$. Using the self-consistent Hartree-Fock method on a particle-hole symmetric model and allowing…

强关联电子 · 物理学 2023-03-01 Fang Xie , Jian Kang , B. Andrei Bernevig , Oskar Vafek , Nicolas Regnault

The gap equation for Dirac quasiparticles in monolayer graphene in constant magnetic and pseudomagnetic fields, where the latter is due to strain, is studied in a low-energy effective model with contact interactions. Analyzing solutions of…

强关联电子 · 物理学 2015-12-14 D. O. Rybalka , E. V. Gorbar , V. P. Gusynin

Bernal bilayer graphene has recently been discovered to exhibit a wide range of unique ordered phases resulting from interaction-driven effects and encompassing spin and valley magnetism, correlated insulators, correlated metals, and…

The integer quantum Hall states at fillings $\nu = 0$ and $|\nu| = 1$ in monolayer graphene have drawn much attention as they are generated by electron-electron interactions. Here we explore aspects of the $\nu = 0$ and $|\nu| = 1$ quantum…

强关联电子 · 物理学 2020-11-09 Hank Chen , Matthew R. C. Fitzpatrick , Sujit Narayanan , Bitan Roy , Malcolm P. Kennett

We present an exact diagonalisation study of bilayer quantum Hall systems at a filling factor of two in the spherical geometry. We find the high-Zeeman-coupling phase boundary of the broken symmetry canted antiferromagnet is given exactly…

介观与纳米尺度物理 · 物理学 2009-10-31 John Schliemann , A. H. MacDonald

Starting from the strong-coupling limit of an extended Hubbard model, we develop a spin-fermion theory to study the insulating phase and pairing symmetry of the superconducting phase in twisted bilayer graphene. Assuming that the insulating…

Tight-binding calculations predict that the AA-stacked graphene bilayer has one electron and one hole conducting bands, and that the Fermi surfaces of these bands coincide. We demonstrate that as a result of this degeneracy, the bilayer…

介观与纳米尺度物理 · 物理学 2012-11-30 A. L. Rakhmanov , A. V. Rozhkov , A. O. Sboychakov , Franco Nori

We investigate the magnetotransport properties of quasi-free standing epitaxial graphene bilayer on SiC, grown by atmospheric pressure graphitization in Ar, followed by H$_2$ intercalation. At the charge neutrality point the longitudinal…

介观与纳米尺度物理 · 物理学 2012-05-16 Kayoung Lee , Seyoung Kim , M. S. Points , T. E. Beechem , Taisuke Ohta , E. Tutuc

Bilayer graphene has been predicted to give unprecedented tunability of the electron-electron interaction with the help of external parameters, allowing one to stabilize different fractional quantum Hall states. Recent experimental works…

强关联电子 · 物理学 2015-05-15 Kyrylo Snizhko , Vadim Cheianov , Steven H. Simon

We consider the zero-filled quantum-Hall ferromagnetic state of bilayer graphene subject to a kink-like perpendicular electric field, which generates domain walls in the electronic state and low-energy collective modes confined to move…

强关联电子 · 物理学 2015-06-17 Victoria Mazo , Chia-Wei Huang , Efrat Shimshoni , Sam T. Carr , H. A. Fertig

The origin of the low current on/off ratio at room temperature in dual-gated bilayer graphene field-effect transistors is considered to be the variable range hopping in gap states. However, the quantitative estimation of gap states has not…

材料科学 · 物理学 2015-11-18 Kaoru Kanayama , Kosuke Nagashio

Under high perpendicular magnetic field and at low temperatures, graphene develops an insulating state at the charge neutrality point. This state, dubbed $\nu=0$, is due to the interplay between electronic interactions and the four-fold…

With the two-band continuum model, we study the broken inversion and time-reversal symmetry state of electrons with finite-range repulsive interactions in bilayer graphene. With the analytical solution to the mean-field Hamiltonian, we…

强关联电子 · 物理学 2012-12-19 Xin-Zhong Yan , C. S. Ting

Here we show that the Pfaffian state proposed for the $\frac52$ fractional quantum Hall states in conventional two-dimensional electron systems can be readily realized in a bilayer graphene at one of the Landau levels. The properties and…

介观与纳米尺度物理 · 物理学 2015-05-27 Vadim M. Apalkov , Tapash Chakraborty

We present a study on the lifting of degeneracy of the size-quantized energy levels in an electrostatically defined quantum point contact in bilayer graphene by the application of in-plane magnetic fields. We observe a Zeeman spin splitting…

介观与纳米尺度物理 · 物理学 2022-02-03 Vanessa Gall , Rainer Kraft , Igor V. Gornyi , Romain Danneau

The electromagnetic response of bilayer graphene in a magnetic field is studied in comparison with that of monolayer graphene. Both types of graphene turn out to be qualitatively quite similar in dielectric and screening characteristics,…

介观与纳米尺度物理 · 物理学 2009-11-13 T. Misumi , K. Shizuya

The $\nu=0$ quantum Hall state in a defect-free graphene sample is studied within the framework of quantum Hall ferromagnetism. We perform a systematic analysis of the pseudospin anisotropies, which arise from the valley and sublattice…

强关联电子 · 物理学 2012-04-24 Maxim Kharitonov