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相关论文: Antiferromagnetic state in bilayer graphene

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We devote this work to the study of the mean-field phase diagram of the $\nu=0$ quantum Hall state in bilayer graphene and the computation of the corresponding neutral collective modes, extending the results of recent works in the…

介观与纳米尺度物理 · 物理学 2017-04-20 J. R. M. de Nova , I. Zapata

We report the fabrication of electrostatically defined nanostructures in encapsulated bilayer graphene, with leakage resistances below depletion gates as high as $R \sim 10~$G$\Omega$. This exceeds previously reported values of $R =~$10 -…

The nematic phase transition in electronic liquids, driven by Coulomb interactions, represents a new class of strongly correlated electronic ground states. We studied suspended samples of bilayer graphene, annealed so that it achieves very…

The nature of the insulating and superconducting states in twisted bilayer graphene systems is intensely debated. While many works seek for explanations in the few flat bands near the Fermi level, theory and a number of experiments suggest…

强关联电子 · 物理学 2019-11-06 Lennart Klebl , Carsten Honerkamp

We report first-principles calculations on antiferromagnetic spin ordering in graphene under biaxial strain. Using hybrid functional calculations, we found that semimetallic graphene sheets undergo a transition to antiferromagnetic…

材料科学 · 物理学 2012-12-11 Sung-Hoon Lee , Sungjin Kim , Kinam Kim

Anomalous quantum Hall effects in single-layer and bilayer graphene are related with nontrivial topological properties of electron states (Berry phases $\pi$ and 2$\pi$, respectively). It was known that the Atiyah-Singer index theorem…

介观与纳米尺度物理 · 物理学 2008-09-17 M. I. Katsnelson , M. F. Prokhorova

We investigate the transport properties of double-gated bilayer graphene nanoribbons at room temperature. The devices were fabricated using conventional CMOS-compatible processes. By analyzing the dependence of the resistance at the charge…

介观与纳米尺度物理 · 物理学 2015-05-18 Bartholomaeus N. Szafranek , Daniel Schall , Martin Otto , Daniel Neumaier , Heinrich Kurz

Nontrivial interacting phases can emerge in elementary materials. As a prime example, continuing advances in device quality have facilitated the observation of a variety of spontaneous quantum Hall-like states, a cascade of Stoner-like…

介观与纳米尺度物理 · 物理学 2024-08-30 Felix Winterer , Fabian R. Geisenhof , Noelia Fernandez , Anna M. Seiler , Fan Zhang , R. Thomas Weitz

We here classify of all the fully gapped \emph{massive} and \emph{gapless} phases in bilayer graphene. The effective low energy theory in bilayer graphene is constructed, and various discrete and continuous symmetries of the non-interacting…

强关联电子 · 物理学 2013-09-18 Bitan Roy

We propose a new system where electron and hole states are electrostatically confined into a quantum ring in bilayer graphene. These structures can be created by tuning the gap of the graphene bilayer using nanostructured gates or by…

介观与纳米尺度物理 · 物理学 2015-05-14 M. Zarenia , J. M. Pereira , F. M. Peeters , G. A. Farias

We analyze the dissipative conductance of the zero-plateau quantum Hall state appearing in undoped graphene in strong magnetic fields. Charge transport in this state is assumed to be carried by a magnetic domain wall, which forms by…

介观与纳米尺度物理 · 物理学 2009-06-02 Efrat Shimshoni , H. A. Fertig , G. Venketeswara Pai

Bilayer graphene provides a unique platform to explore the rich physics in quantum Hall effect. The unusual combination of spin, valley and orbital degeneracy leads to interesting symmetry broken states with electric and magnetic field.…

介观与纳米尺度物理 · 物理学 2019-03-27 Manabendra Kuiri , Anindya Das

We investigate the interplay of in-plane magnetic and transverse electric fields in AB-stacked bilayer graphene. In prior work, we demonstrated that this configuration induces an insulator-metal (IM) transition with large impact on the…

介观与纳米尺度物理 · 物理学 2026-03-27 Amarnath Chakraborty , Aleksandr Rodin , Shaffique Adam , Giovanni Vignale

We show that the ground state of zigzag bilayer graphene nanoribbons is non-magnetic. It also possesses a finite gap, which has a non-monotonic dependence with the width as a consequence of the competition between bulk and strongly…

材料科学 · 物理学 2009-04-03 Matheus P. Lima , A. Fazzio , Antônio J. R. da Silva

We study the phase diagram of an effective model of competing nematic and antiferromagnetic orders of interacting electrons on the Bernal-stacked honeycomb bilayer, as relevant for bilayer graphene. In the noninteracting limit, the model…

强关联电子 · 物理学 2021-07-07 Shouryya Ray , Lukas Janssen

A-B stacked bilayer graphene has massive electron and hole-like excitations with zero gap in the nearest-neighbor hopping approximation. In equilibrium, the quasiparticle occupation approximately follows the usual Fermi-Dirac distribution.…

介观与纳米尺度物理 · 物理学 2020-01-22 Dung X. Nguyen , Glenn Wagner , Steven H. Simon

Stacking two graphene layers twisted by the 'magic angle' $\theta \approx 1.1^\circ$ generates flat energy bands, which in turn catalyzes various strongly correlated phenomena depending on filling and sample details. At charge neutrality,…

强关联电子 · 物理学 2021-03-24 Alex Thomson , Jason Alicea

We develop a theory for quantum phases and quantum multicriticality in bilayer graphene in the presence of an explicit energy gap in the non-interacting spectrum by extending previous renormalization group (RG) analyses of electron-electron…

强关联电子 · 物理学 2014-11-18 Robert E. Throckmorton , S. Das Sarma

The electron-electron interaction in the Landau levels of bilayer graphene is markedly different from that of conventional semiconductors such as GaAs. We show that in the zeroth Landau level of bilayer graphene, in the orbital which is…

强关联电子 · 物理学 2022-03-15 Ajit C. Balram

Bilayer graphene has drawn significant attention due to the opening of a band gap in its low energy electronic spectrum, which offers a promising route to electronic applications. The gap can be either tunable through an external electric…

介观与纳米尺度物理 · 物理学 2015-05-27 Gregory M. Rutter , Suyong Jung , Nikolai N. Klimov , David B. Newell , Nikolai B. Zhitenev , Joseph A. Stroscio