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To address the robustness of the transport gap induced by locally strained regions in graphene nanostructures, the effect of disorder and smoothness of the interface region is investigated within the Landauer-B\"uttiker formalism. The…

介观与纳米尺度物理 · 物理学 2013-11-26 D. A. Bahamon , Vitor M. Pereira

It has been shown in a recent study [Nguyen et al., Nanotechnol. \textbf{25}, 165201 (2014)] that unstrained/strained graphene junctions are promising candidates to improve the performance of graphene transistors that is usually hindered by…

介观与纳米尺度物理 · 物理学 2014-10-07 Mai Chung Nguyen , Viet Hung Nguyen , Huy-Viet Nguyen , Philippe Dollfus

We investigate the combined influence of structural defects and uniaxial longitudinal strain on the electronic transport properties of armchair graphene nanoribbons using the numerical approach based on the semiempirical tight-binding…

介观与纳米尺度物理 · 物理学 2013-09-30 Thomas Lehmann , Dmitry A. Ryndyk , Gianaurelio Cuniberti

Intrinsic bilayer graphene is a gapless semimetal. Under the application of a bias field it becomes a semiconductor with a direct band gap that is proportional to the applied field. Under a layer-asymmetric strain (where the upper layer…

介观与纳米尺度物理 · 物理学 2014-12-04 J. A. Crosse

We analyze the effect of tensional strain in the electronic structure of graphene. In the absence of electron-electron interactions, within linear elasticity theory, and a tight-binding approach, we observe that strain can generate a bulk…

材料科学 · 物理学 2009-07-15 Vitor M. Pereira , A. H. Castro Neto , N. M. R. Peres

We investigate the effects of uniaxial strain on the transport properties of vertical devices made of two twisted graphene layers, which partially overlap each other. We find that because of the different orientations of the two graphene…

介观与纳米尺度物理 · 物理学 2015-02-26 Viet Hung Nguyen , Huy-Viet Nguyen , Jerome Saint Martin , Philippe Dollfus

Density functional study of strain effects on the electronic band structure and transport prop- erties of the graphene nanoribbons (GNR) is presented. We apply a uniaxial strain in the x (nearest-neighbor) and y (second nearest-neighbor)…

材料科学 · 物理学 2010-06-25 R. Rasuli , H. Rafii-Tabar , A. Iraji zad

As most materials available in macroscopic quantities, graphene appears in a polycrystalline form and thus contains grain boundaries. In the present work, the effect of uniaxial strain on the electronic transport properties through graphene…

介观与纳米尺度物理 · 物理学 2016-06-07 Viet Hung Nguyen , Trinh Xuan Hoang , Philippe Dollfus , Jean-Christophe Charlier

Under the application of a force, a material will deform and, hence, the crystal lattice will experience strain. This induced strain will alter the electronic properties of the material. In particular, strain in graphene generates an…

介观与纳米尺度物理 · 物理学 2014-07-08 J. A. Crosse

We consider superconducting properties of a two-dimensional Dirac material such as graphene under strain that produces a flat band spectrum in the normal state. We show that in the superconducting state, such a model results in a highly…

超导电性 · 物理学 2016-06-22 V. J. Kauppila , F. Aikebaier , T. T. Heikkilä

Time-reversal symmetry breaking superconductors are exotic phases of matter with fascinating properties, which are, however, encountered rather sparsely. Here we identify the possibility of realizing such a superconducting ground state that…

介观与纳米尺度物理 · 物理学 2014-08-01 Bitan Roy , Vladimir Juricic

We show that when the pseudomagnetic fields created by long wavelength deformations are appropriately coupled with a scalar electric potential, a significant energy gap can emerge due to the formation of a Haldane state. Ramifications of…

介观与纳米尺度物理 · 物理学 2011-05-31 T. Low , F. Guinea , M. I. Katsnelson

This work investigates the effect of the uniaxial strain on the tunneling conductance in a strained graphene superconductor where strain is applied in the armchair direction. Based on the Tight-Binding model, applying strain in the armchair…

超导电性 · 物理学 2010-09-24 Bumned Soodchomshom

We investigate the ballistic electron transport in a monolayer graphene with configurational averaged impurities, located between two clean graphene leads. It is shown that the electron transmission are strongly dependent on the…

介观与纳米尺度物理 · 物理学 2014-05-28 Juan Sebastian Ardenghi , Pablo Bechthold , Estela Gonzalez , Paula Jasen , Alfredo Juan

Superconductivity in single-layer graphene has attracted considerable interest. Here, using the determinant quantum Monte Carlo method, we study transitions of superconductivity and magnetism in a monolayer graphene with a special periodic…

强关联电子 · 物理学 2024-12-31 Jingyao Meng , Runyu Ma , Tianxing Ma , Hai-Qing Lin

Lattice deformations couple to the low energy electronic excitations of graphene as vector fields similar to the electromagnetic potential \cite{SA02b,VKG10}. The suggestion that certain strain configurations would be able to induce pseudo…

介观与纳米尺度物理 · 物理学 2018-09-27 Eduardo V. Castro , Miguel A. Cazalilla , María A. H. Vozmediano

Two-dimensional materials (2DMs) are fundamentally electro-mechanical systems. Their environment unavoidably strains them and modifies their quantum transport properties. For instance, a simple uniaxial strain could completely turn off the…

介观与纳米尺度物理 · 物理学 2024-04-30 A. C. McRae , G. Wei , L. Huang , S. Yigen , V. Tayari , A. R. Champagne

Within the tight binding approximation, we study the dependence of the electronic band structure and of the optical conductivity of a graphene single layer on the modulus and direction of applied uniaxial strain. While the Dirac cone…

介观与纳米尺度物理 · 物理学 2010-01-15 F. M. D. Pellegrino , G. G. N. Angilella , R. Pucci

Among many remarkable qualities of graphene, its electronic properties attract particular interest due to a massless chiral character of charge carriers, which leads to such unusual phenomena as metallic conductivity in the limit of no…

介观与纳米尺度物理 · 物理学 2011-04-07 F. Guinea , M. I. Katsnelson , A. K. Geim

Germanium is a strong candidate as a laser source for silicon photonics. It is widely accepted that the band structure of germanium can be altered by tensile strain so as to reduce the energy difference between its direct and indirect band…

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