相关论文: Single InAsP/InP quantum dots as telecommunication…

We report on the site-selected growth of bright single InAsP quantum dots embedded within InP photonic nanowire waveguides emitting at telecom wavelengths. We demonstrate a dramatic dependence of the emission rate on both the emission…

We have studied the emission properties of individual InAs quantum dots (QDs) grown in an InGaAsP matrix on InP(100) by metal-organic vapor-phase epitaxy. Low-temperature microphotoluminescence spectroscopy shows emission from single QDs…

Single dot photoluminescence excitation spectroscopy provides an insight into energy structure of individual quantum dots, energy transfer processes within and between the dots and their surroundings. The access to single dot energy…

We report on a combined photoluminescence imaging and atomic force microscopy study of single, isolated self-assembled InAs quantum dots (density <0.01 um^(-2) capped by a 95 nm GaAs layer, and emitting around 950 nm. By combining optical…

Time-resolved microphotoluminescence study is presented for quantum dots which are formed in the InAs/GaAs wetting layer. These dots are due to fluctuations of In composition in the wetting layer. They show spectrally sharp luminescence…

Due to their band-structure and optical properties, InAs/InP quantum dots (QDs) constitute a promising system for single-photon generation at third telecom window of silica fibers and for applications in quantum communication networks.…

Single photon emission was observed from site-controlled InGaN/GaN quantum dots. The single-photon nature of the emission was verified by the second-order correlation function up to 90 K, the highest temperature to date for site-controlled…

We study the luminescence dynamics of telecom wavelength InAs quantum dots grown on InP(111)A by droplet epitaxy. The use of the ternary alloy InAlGaAs as a barrier material leads to photon emission in the 1.55 $\mu$m telecom C-band. The…

The dynamic response of InAsP quantum dots grown on InP(001) substrates by low-pressure Metalorganic Vapor Phase Epitaxy emitting around 1.55 $\mu$m, is investigated by means of time-resolved microphotoluminescence as a function of…

We report on the enhancement of the spontaneous emission in the visible red spectral range from site-controlled InP/GaInP quantum dots by resonant coupling to Tammplasmon modes confined beneath gold disks in a hybrid metal/semiconductor…

Photoluminescence spectroscopy of single InAs quantum dots at cryogenic temperatures (~14 K) is performed using a micron-scale optical fiber taper waveguide as a near-field optic. The measured collection efficiency of quantum dot…

In this chapter we will discuss the technology and experimental techniques to realize quantum dot (QD) single photon sources combining high outcoupling efficiencies and highest degrees of non-postselected photon indistinguishability. The…

Indistinguishable single photons are necessary for quantum information processing applications. Resonant or quasiresonant excitation of single quantum dots provides greater single photon indistinguishability than incoherent pumping, but is…

We investigate the photoluminescence temperature dependence of individual InAs/InGaAlAs quantum dots emitting in the optical telecommunication bands. The high-density dots are grown on InP substrates and the selection of a smaller dot…

We demonstrate a quantum dot single photon source at 900 nm triggered at 300 MHz by a continuous wave telecommunications wavelength laser followed by an electro-optic modulator. The quantum dot is excited by on-chip-generated second…

Quantum dots play a promising role in the development of novel optical and biosensing devices. In this study, we investigated steady-state and time-dependent luminescence properties of InGaP/ZnS core/shell colloidal quantum dots in a…

We present here an atomistic theory of the electronic and optical properties of hexagonal InAsP quantum dots in InP nanowires in the wurtzite phase. These self-assembled quantum dots are unique in that their heights, shapes, and diameters…

We present a comprehensive study of the optical properties of InAs/InP self-assembled quantum dots (QDs) using an empirical pseudopotential method and configuration interaction treatment of the many-particle effects. The results are…

We investigate the intensity correlation properties of single photons emitted from an optically excited single semiconductor quantum dot. The second order temporal coherence function of the photons emitted at various wavelengths is measured…

We report highly efficient single photon generation from InGaAs self-assembled quantum dots emitting within a two-dimensional photonic bandgap. A strongly suppressed multiphoton probability is obtained for single quantum dots in bulk GaAs…