相关论文: The effect of changing electrode metal on solution…
We present a computationally inexpensive yet accurate phenomenological model of memristive behavior in titanium dioxide devices by fitting experimental data. By design, the model predicts most accurately I-V relation at small non-disturbing…
Developing efficient, fast performing and thermally stable Silver iodide based fast ion conducting solids are of great interest for resistive switching applications, but still remain challenges. Metallization in bulk, behavior of threshold…
Non-volatile resistive switching is demonstrated in memristors with nanocrystalline molybdenum disulfide (MoS$_2$) as the active material. The vertical heterostructures consist of silicon, vertically aligned MoS$_2$ and chrome / gold metal…
Memristors are passive circuit elements which behave as resistors with memory. The recent experimental realization of a memristor has triggered interest in this concept and its possible applications. Here, we demonstrate memristive response…
Upon insertion and extraction of lithium, materials important for electrochemical energy storage can undergo changes in thermal conductivity (${\Lambda}$) and elastic modulus ($\it M$). These changes are attributed to evolution of the…
Memristive circuit elements constitute a cornerstone for novel electronic applications, such as neuromorphic computing, called to revolutionize information technologies. By definition, memristors are sensitive to the history of electrical…
Interface-type resistive switching (RS) devices with lower operation current and more reliable switching repeatability exhibits great potential in the applications for data storage devices and ultra-low-energy computing. However, the…
Transition-metal oxide films, demonstrating the effects of both threshold and nonvolatile memory resistive switching, have been recently proposed as candidate materials for storage-class memory. In this work we describe some experimental…
This study explores the impact of organic cations in bismuth iodide complexes on their memristive behavior in metal-insulator-metal (MIM) type thin-layer devices. The presence of electron-donating and electron withdrawing functional groups…
Vertical structures of SiO$_{2}$ sandwiched between a top tungsten electrode and conducting non-metal substrate were fabricated by dry and wet etching methods. Both structures exhibit similar voltage-controlled memory behaviors, in which…
Our study demonstrates that strong cationic segregation can occur in amorphous complex oxide memristors during electrical operation. With the help of analytic techniques, we observed that switching the electrical stimulation from voltage to…
We report a bistable organic memory made of a single organic layer embedded between two electrodes, we compare to the organic/metal nanoparticle/organic tri-layers device [L.P. Ma, J. Liu, and Y. Yang, Appl. Phys. Lett. 80, 2997 (2002)]. We…
Two-dimensional (2D) transition metal dichalcogenides (TMDs), such as molybdenum disulfide (MoS$_2$), are emerging as promising materials for next-generation electronic devices. They have proved to be serious candidates for integration with…
We report on hybrid memristive devices made of a network of gold nanoparticles (10 nm diameter) functionalized by tailored 3,4(ethylenedioxy)thiophene (TEDOT) molecules, deposited between two planar electrodes with nanometer and micrometer…
While two-terminal HfOX (x<2) memristor devices have been studied for ion transport and current evolution, there have been limited reports on the effect of the long-range thermal environment on their performance. In this work,…
The memristor is the fundamental non-linear circuit element, with uses in computing and computer memory. ReRAM (Resistive Random Access Memory) is a resistive switching memory proposed as a non-volatile memory. In this review we shall…
Usually, resistive switching (RS) devices show digital RS memory (sharp SET and RESET process), which is most suitable for digital data storage applications. Some RS devices also manifest ideal memristive behavior or analog memory…
We report that the electrical conductance between closely-spaced gold electrodes in acid solution can be turned from off [insulating; I] to on [conducting; C] to off again by monotonically sweeping a gate voltage applied to the solution. We…
Transition metal oxides (TMOs) and post-TMOs (PTMOs), when doped with Carbon, show non-volatile current-voltage (I-V) characteristics, which are both universal and repeatable. We have shown spectroscopic evidence of the introduction of…
Exploration of novel resistive switching materials attracts attention to replace conventional Si-based transistors and to achieve neuromorphic computing that can surpass the limit of the current Von-Neumann computing for the time of…