相关论文: Effective Mass and Spin Susceptibility of Dilute T…
We report effective mass (m*) measurements, via analyzing the temperature dependence of the Shubnikov-de Haas oscillations, for dilute, interacting, two-dimensional electron systems (2DESs) occupying a single conduction-band valley in AlAs…
We present magnetotransport measurements performed on two-dimensional hole gases embedded in carbon doped p-type GaAs/AlGaAs heterostructures grown on [001] oriented substrates. A pronounced beating pattern in the Shubnikov-de Haas…
We report measurements and calculations of the spin-subband depopulation, induced by a parallel magnetic field, of dilute GaAs two-dimensional (2D) hole systems. The results reveal that the shape of the confining potential dramatically…
We present quantitative measurements and calculations of the spin-orbit induced zero-magnetic-field spin-splitting in two-dimensional (2D) hole systems in modulation-doped GaAs (311)A quantum wells. The results show that the splitting is…
We report measurements of spin susceptibility of a two-dimensional hole gas confined at an GaAs/AlGaAs interface in density range from 2.8 x 10^10 to 6.5 x 10^10 cm-2. We used the method of spin polarization of carriers in parallel magnetic…
The dispersion of Rashba-split heavy-hole subbands in GaAs two-dimensional hole gases (2DHGs) is difficult to access experimentally because strong heavy-hole-light-hole mixing produces non-parabolicity and breaks the usual correspondence…
We report measurements of the effective $g$ factor of low-density two-dimensional holes in a Ge quantum well. Using the temperature dependence of the Shubnikov-de Haas oscillations, we extract the effective $g$ factor in a magnetic field…
We have accurately measured the effective mass in a dilute two-dimensional electron system in silicon by analyzing temperature dependence of the Shubnikov-de Haas oscillations in the low-temperature limit. A sharp increase of the effective…
We report measurements of the spin susceptibility and the electron effective mass for two-dimensional electrons confined at the interfaces of MgxZn1-xO/ZnO single heterostructures (x = 0.05, 0.08, and 0.11), grown by molecular-beam epitaxy…
We have measured the effective mass, m, and Lande g-factor in very dilute two-dimensional electron systems in silicon. Two independent methods have been used: (i) measurements of the magnetic field required to fully polarize the electrons'…
We studied the Shubnikov-de Haas (SdH) oscillations in high-mobility Si-MOS samples over a wide range of carrier densities $n\simeq (1-50) \times 10^{11}$cm$^{-2}$, which includes the vicinity of the apparent metal-insulator transition in…
We report the results of magnetotransport experiments carried out on low-disorder 2D hole gases (2DHG) in the strongly correlated liquid regime, hosted in dopant-free (100) GaAs/AlGaAs single heterojunctions. Over a wide range of 2DHG…
We determine the density-dependent electron mass, m*, in two-dimensional (2D) electron systems of GaAs/AlGaAs heterostructures by performing detailed low-temperature Shubnikov deHaas measurements. Using very high quality transistors with…
We calculate the temperature dependent resistivity in spin-split subbands induced by the inversion asymmetry of the confining potential in GaAs 2D hole systems. By considering both temperature dependent multisubband screening of impurity…
We report density-dependent effective hole mass measurements in undoped germanium quantum wells. We are able to span a large range of densities ($2.0-11\times10^{11}$ cm$^{-2}$) in top-gated field effect transistors by positioning the…
The complex band structure, large spin-orbit induced band splitting, and heavy effective mass of two-dimensional (2D) hole systems hosted in GaAs quantum wells render them rich platforms to study many-body physics and ballistic transport…
Owing to their large effective mass, strong and tunable spin-orbit coupling, and complex band-structure, two-dimensional hole systems (2DHSs) in GaAs quantum wells provide rich platforms to probe exotic many-body physics, while also…
We determine the spin susceptibility in a two dimensional electron system in GaAs/AlGaAs over a wide range of low densities from 2$\times10^{9}$cm$^{-2}$ to 4$\times10^{10}$cm$^{-2}$. Our data can be fitted to an equation that describes the…
We report precision measurements of the effective mass m* in high-quality bilayer graphene using the temperature dependence of the Shubnikov-de Haas oscillations. In the density range of 0.7 x 10^12/cm^2 < n < 4.1 x 10^12 /cm^2, both the…
We measured Shubnikov-de Haas (SdH) oscillations in GaAs (100) two-dimensional holes to determine the inversion asymmetry-induced spin splitting. The Fourier spectrum of the SdH oscillations contains two peaks, at frequencies $f_-$ and…