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相关论文: Efficient resistive memory effect on SrTiO3 by ion…

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Epitaxial La0.7Sr0.3MnO3 (LSMO) thin films, with different thickness ranging from 20 nm up to 330 nm, were deposited on (100)-oriented strontium titanate (STO) substrates by pulsed laser deposition, and their structure and morphology…

We report on dynamic effects associated with thermally-annealing amorphous indium-oxide films. In this process the resistance of a given sample may decrease by several orders of magnitude at room-temperatures, while its amorphous structure…

无序系统与神经网络 · 物理学 2017-07-04 Z. Ovadyahu

We propose an experimental protocol to directly observe the Kondo effect by scattering ultracold atoms with spin-dependent interactions. We propose using an optical Feshbach resonance to engineer Kondo-type spin-dependent interactions in a…

量子气体 · 物理学 2016-03-09 Bhuvanesh Sundar , Erich J. Mueller

Oxide materials are important candidates for the next generation of electronics due to a wide array of desired properties which they can exhibit alone or when combined with other materials. While SrTiO$_3$ (STO) is often considered a…

强关联电子 · 物理学 2019-09-11 Slavko Rebec , Tao Jia , Hafiz Sohail , Makoto Hashimoto , Donghui Lu , Zhixun Shen , Robert Moore

The initial homoepitaxial growth of SrTiO3 on a (\surd13\times\surd13) - R33.7{\deg}SrTiO3(001) substrate surface, which can be prepared under oxide growth conditions, is atomically resolved by scanning tunneling microscopy. The identical…

We present x-ray reflectivity, x-ray diffraction and atomic force microscopy measurements of single crystal SrTiO3 taken as a function of temperature. We found a rumpling transformation of the SrTiO3 surface after cooling the sample below…

材料科学 · 物理学 2014-11-18 S. Singh , Te-Yu Chien , J. R. Guest , M. R. Fitzsimmons

Resistive switching (RS) effect observed in capacitor-like metal/insulator/metal junctions belongs to the most promising candidates for next generation of memory cell technology. It is based upon a sudden change of the junction resistance…

Quantum memory devices with high storage efficiency and bandwidth are essential elements for future quantum networks. Here, we report a storage efficiency greater than 28% in a Tm$^{3+}$: YAG crystal in elevated temperatures and without…

量子物理 · 物理学 2025-05-29 Yisheng Lei , Zongfeng Li , Mahdi Hosseini

Crystal surfaces are sensitive to the surrounding environment, where atoms left with broken bonds reconstruct to minimize surface energy. In many cases, the surface can exhibit chemical properties unique from the bulk. These differences are…

材料科学 · 物理学 2016-12-21 Weizong Xu , Preston C. Bowes , Everett D. Grimley , Douglas L. Irving , James M. LeBeau

The band gap of SrTiO$_{3}$ retards its photocatalytic application. Regardless narrowing the band gap of the anion doped SrTiO$_{3}$, the anion doping structures have low photoconversion efficiency. The co-cation dopings are used to modify…

材料科学 · 物理学 2015-10-27 M. M. Fadlallah , T. J. H. Vlugt , M. F. Shibl

We analyzed micrometer-scale titanium-niobium-oxide prototype memristors, which exhibited low write-power (<3 {\mu}W) and energy (<200 fJ/bit/{\mu}m2), low read-power (~nW), and high endurance (>millions of cycles). To understand their…

The shape memory behavior of a NiTi nanoparticle is analyzed by molecular dynamics simulations. After a detailed description of the equilibrium structures of the used model potential, the multi variant martensitic ground state, which…

材料科学 · 物理学 2022-01-04 Daniel Mutter , Peter Nielaba

Electron-beam deposition of an insulating granular aluminium or of an off-stoichiometric amorphous alumina layer on a $SrTiO_3$ surface is a simple way to get a metallic interface from insulating materials. No heating nor specific…

材料科学 · 物理学 2016-09-21 Julien Delahaye , Thierry Grenet

Nanothermochromic diffraction gratings based on the metal-insulator transition of $\mathrm{VO_2}$ are fabricated by site-selective ion beam implantation in a $\mathrm{SiO_2}$ matrix. Gratings were defined either (i) directly by spatially…

材料科学 · 物理学 2012-10-25 Johannes Zimmer , Achim Wixforth , Helmut Karl , Hubert J. Krenner

The ramp-reversal memory (RRM) effect in metal-insulator transition metal oxides (TMOs), a non-volatile resistance change induced by repeated temperature cycling, has attracted considerable interest in neuromorphic computing and…

材料科学 · 物理学 2025-11-20 Y. Sun , M. Alzate Banguero , P. Salev , Ivan K. Schuller , L. Aigouy , A. Zimmers , E. W. Carlson

Here we study the resistive switching (RS) effect that emerges when ferroelectric BaTiO$_{3}$ (BTO) and few-layers MoSe$_{2}$ are combined in one single structure. The C-V loops reveal the ferroelectric nature of both Al/Si/SiO$_{x}$/BTO/Au…

应用物理 · 物理学 2017-10-26 J. P. B. Silva , C. Almeida Marques , J. Agostinho Moreira , O. Conde

Supercapacitors have recently gained popularity as possible energy storage systems due to their high cycling ability and increased power density. However, one of the major drawbacks of supercapacitors is that they have a low energy density,…

材料科学 · 物理学 2019-08-29 Sadhana Lolla , Xuan Luo

We show a novel magneto-resistive effect that appears in lithographically shaped, three-arm nanostructure, fabricated from ferromagnetic (Ga,Mn)As layers. The effect, related to a rearrangement of magnetic domain walls between different…

材料科学 · 物理学 2009-11-11 T. Figielski , T. Wosinski , A. Morawski , A. Makosa , J. Wrobel , J. Sadowski

Epitaxial thin films of La0.7Ba0.3MnO3 manganite, deposited using Chemical Solution Deposition technique, were irradiated by 200 MeV Ag+15 ions with a maximum ion dose up to 1x10^12 ions/cm2. Temperature- and magnetic field-dependent…

材料科学 · 物理学 2009-11-11 R. N. Parmar , J. H. Markna , D. G. Kuberkar , Ravi Kumar , D. S. Rana , Vivas C. Bagve , S. K. Malik

X-ray diffraction studies showed that the structure of (Sr$_{1-x}$Pr$_x$)TiO$_3$ solid solutions at 300 K changes from the cubic $Pm3m$ to the tetragonal $I4/mcm$ with increasing $x$. The analysis of XANES and EXAFS spectra of the solid…

材料科学 · 物理学 2012-07-26 I. A. Sluchinskaya , A. I. Lebedev , A. Erko